Band offsets and electronic properties of the Ga2O3/FTO heterojunction via transfer of free-standing Ga2O3 onto FTO/glass

The determination of band offsets is crucial in the optimization of Ga₂O₃-based devices, since the band alignment types could determine the operations of devices due to the restriction of carrier transport across the heterogeneous interfaces. In this work, the band offsets of the Ga₂O₃/FTO heterojunction are studied using x-ray photoelectron spectroscopy (XPS) based on Kraut's method, which suggests a staggered type-Ⅱ alignment with a conduction band offset (ΔE_C) of 1.66 eV and a valence band offset (ΔE_V) of -2.41 eV. Furthermore, the electronic properties of the Ga₂O₃/FTO heterostructure are also measured, both in the dark and under ultraviolet (UV) illuminated conditions (254 nm UV light). Overall, this work can provide meaningful guidance for the design and construction of oxide hetero-structured devices based on wide-bandgap semiconducting Ga₂O₃.     

A broadband self-powered UV photodetector of aβ-Ga2O3/γ-CuI p–n junction

The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by spin-coating.The fabricated heterojunction has a large open circuit voltage(Voc)of 0.69 V,desired for achieving self-powered operation of a photodetector.Irradiated by 254-nm ultraviolet(UV)light,when the bias voltage is-5 V,the dark current(Idark)of the device is 0.47 p A,the photocurrent(Iphoto)is-50.93 n A,and the photo-to-dark current ratio(Iphoto/Idark)reaches about 1.08×10;.The device has a stable and fast response speed in different wavelengths,the rise time(τr)and decay time(τd)are 0.762 s and 1.741 s under 254-nm UV light illumination,respectively.While theτr andτd are 10.709 s and7.241 s under 365-nm UV light illumination,respectively.The time-dependent(I–t)response(photocurrent in the order of10-10 A)can be clearly distinguished at a small light intensity of 1μW·cm;.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.     

A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga2O3 photoconductor with high photo response

A 4$\times $4 beta-phase gallium oxide ($\beta $-Ga$_{2}$O$_{3}$) deep-ultraviolet (DUV) rectangular 10-fingers interdigital metal-semiconductor-metal (MSM) photodetector array of high photo responsivity is introduced. The Ga$_{2}$O$_{3}$ thin film is prepared through the metalorganic chemical vapor deposition technique, then used to construct the photodetector array via photolithography, lift-off, and ion beam sputtering methods. The one photodetector cell shows dark current of 1.94 pA, photo-to-dark current ratio of 6$\times $10$^{7}$, photo responsivity of 634.15 A$\cdot$W$^{-1}$, specific detectivity of 5.93$\times $10$^{11}$ cm$\cdot$Hz$^{1/2}\cdot$W$^{-1}$ (Jones), external quantum efficiency of 310000%, and linear dynamic region of 108.94 dB, indicating high performances for DUV photo detection. Furthermore, the 16-cell photodetector array displays uniform performances with decent deviation of 19.6% for photo responsivity.     

SIGN-CHANGING SOLUTIONS FOR SCHRODINGER EQUATIONS WITH VANISHING AND SIGN-CHANGING POTENTIALS

In this article, we study the existence of sign-changing solutions for the following SchrSdinger equation
-△u ＋ λV（x）u = K（x）｜u｜^p-2u x∈R^N, u→0 as ｜x｜→ ＋∞,
2N where N ≥ 3, λ〉 0 is a parameter, 2 〈 p 〈 2N/N-2, and the potentials V（x） and K（x） satisfy some suitable conditions. By using the method based on invariant sets of the descending flow, we obtain the existence of a positive ground state solution and a ground state sign-changing solution of the above equation for small λ, which is a complement of the results obtained by Wang and Zhou in [J. Math. Phys. 52, 113704, 2011].     

直接甲醇燃料电池热传递数值模拟

本文建立了二维两相非等温的直接甲醇燃料电池(DMFC)模型,综合考虑了DMFC中的电化学反应、热传递、组分传递和甲醇串流。计算了电池内的温度分布、不同电流密度下的膜电极内部最大温差和膜电极平均温度;在此基础上研究了环境和甲醇进口浓度对电池性能、膜电极内平均温度和最大温差的影响。结果表明:膜电极内阴极的温度高于阳极;甲醇进口浓度的上升导致膜电极内平均温度和最大温差上升;环境对电池性能的影响很小。     

热激励下碳纳米管与水混合体系传质传热的分子动力学模拟

爆发沸腾换热和纳米流体传热具有很重要的理论和实用意义.但由于爆发沸腾传热过程中,液体内部空间温度梯度大,相变速度快,表现出一定的特殊性,纳米流体传热对其传热过程机理的研究,往往需要在实验条件难以实现的空间和时间极限下,充分研究液相和气相内部的温度、压力和运动状态及其空间分布.采用分子动力学的方法,通过对比研究纯水和碳纳米管/水混合体系爆发沸腾过程,对两种体系密度分布、温度场和应力场研究和对比分析,揭示碳纳米管/水混合体系的强化换热机理,探究碳纳米管对混合体系爆发沸腾换热和纳米流体传热的促进作用.     

Self-powered solar-blind photodiodes based on EFG-grown(100)-dominant β-Ga2O3 substrate

We report the edge-defined-film-fed(EFG)-grown β-Ga₂O₃-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~10⁴ at ±5 V.In addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10¹⁰ Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered operation.This work may advance the development of the Ga₂O₃-based Schottky diode solar-blind photodetectors.