Subset representations and eigenvalues of the universal intertwining matrix

We solve a combinatorial question concerning eigenvalues of the universal intertwining endomorphism of a subset representation.     

Chase’s lemma and its context

Chase’s lemma provides a powerful tool for translating properties of (co)products in abelian categories into chain conditions. This note discusses the context in which the lemma is used, making explicit what is often neglected in the literature because of its technical nature.     

偏缠绕模的Frobenius性质

主要给出了偏缠绕模的Frobenius性质，推广了缠绕模相应的性质。     

An Upper Bound for the w-Weak Global Dimension of Pullbacks

Let R be a commutative ring with identity and I0 an ideal of R.We introduce and study the c-weak global dimension c-w.gl.dim(R/I0) of the factor ring R/I0.Let T be a w-linked extension of R,and we also introduce the wR-weak global dimension wR-w.gl.dim(T) of T.We show that the ring T with wR-w.gl.dim(T) =0 is exactly a field and the ring T with wR-w.gl.dim(T) ≤ 1 is exactly a PwRMD.As an application,we give an upper bound for the w-weak global dimension of a Cartesian square (RDTF,M).More precisely,if T is w-linked over R,then w-w.gl.dim(R) ≤ max{wR-w.gl.dim(T) + w-fdR T,c-w.gl.dim(D) + w-fdn D}.Furthermore,for a Milnor square (RDTF,M),we obtain w-w.gl.dim(R) ≤ max{wR-w.gl.dim(T) + w-fdR T,w-w.gl.dim(D) + w-fdR D}.     

Direct visualization of structural defects in 2D semiconductors

Direct visualization of the structural defects in two-dimensional (2D) semiconductors at a large scale plays a significant role in understanding their electrical/optical/magnetic properties, but is challenging. Although traditional atomic resolution imaging techniques, such as transmission electron microscopy and scanning tunneling microscopy, can directly image the structural defects, they provide only local-scale information and require complex setups. Here, we develop a simple, non-invasive wet etching method to directly visualize the structural defects in 2D semiconductors at a large scale, including both point defects and grain boundaries. Utilizing this method, we extract successfully the defects density in several different types of monolayer molybdenum disulfide samples, providing key insights into the device functions. Furthermore, the etching method we developed is anisotropic and tunable, opening up opportunities to obtain exotic edge states on demand.