Direct visualization of structural defects in 2D semiconductors |
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| Affiliation: | 1.Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;2.School of Physical Science, University of Chinese Academy of Sciences, Beijing 100049, China;3.Songshan-Lake Materials Laboratory, Dongguan 523808, Guangdong Province, China |
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| Abstract: | Direct visualization of the structural defects in two-dimensional (2D) semiconductors at a large scale plays a significant role in understanding their electrical/optical/magnetic properties, but is challenging. Although traditional atomic resolution imaging techniques, such as transmission electron microscopy and scanning tunneling microscopy, can directly image the structural defects, they provide only local-scale information and require complex setups. Here, we develop a simple, non-invasive wet etching method to directly visualize the structural defects in 2D semiconductors at a large scale, including both point defects and grain boundaries. Utilizing this method, we extract successfully the defects density in several different types of monolayer molybdenum disulfide samples, providing key insights into the device functions. Furthermore, the etching method we developed is anisotropic and tunable, opening up opportunities to obtain exotic edge states on demand. |
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| Keywords: | structural defects direct visualization molybdenum disulfide anisotropic etching edges |
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