Degradation of rhodamine B photocatalyzed by Eu-doped CdS nanowires illuminated by visible radiation

CdS nanowires doped with different contents of Eu dopant were synthesized by solvothermal method. XRD, SEM, TEM and Raman analyses certified that the as-synthesized samples were hexagonal CdS uniform nanowires. The pure CdS nanowires were 1–3 ?μm long and 80 ?nm diameter with the 1st and 2nd order longitudinal phonon modes at 298 and 594 ?cm^?1. The 3% Eu-doped CdS wires were 800 ?nm–2.5 ?μm long and 75 ?nm diameter with the 1st and 2nd order longitudinal phonon modes at 296 and 593 ?cm^?1. CdS nanowires grew along the [001] direction due to the surface energy effect. The photocatalytic properties of CdS and Eu-doped CdS nanowires were investigated for the degradation of rhodamine B (RhB) illuminated by visible radiation. In this research, Eu dopant played the role in promoting the photocatalytic kinetics because Eu³⁺ ions act as an electron acceptor to promote charge separation and photocatalytic activity. Both ^●OH and ^●O₂^? were the main active radicals used to transform RhB molecules into CO₂, H₂O and other intermediates.     

A DMI Guide to Magnets Micro-World

Journal of Experimental and Theoretical Physics - Dzyaloshinskii–Moriya interaction, DMI in short, represents an antisymmetric type of magnetic interactions that favor orthogonal orientation...     

Electronic structures of CO adsorbed Pt-skin surface on Pt–Co and Pt–Ni alloys

By using angle resolved photoemission spectroscopy, we investigate the electronic structures of Pt-skin layer of Pt–Co and Pt–Ni alloys with CO molecules on the surface. Measured Fermi surface maps and band dispersions reflect the signatures of chemical bonding between Pt-skin layer and CO molecules. Furthermore, the degree of chemical bonding strength of CO molecules, estimated from the energy shift of the participating bands, is found to be reduced on both Pt bimetallic alloys. Our results show how the surface band structure of Pt bimetallic alloys is modified with molecular orbitals of CO molecules on the surface, revealing the important role of the electronic structure in the determination of chemical properties of bimetallic alloys.     

Noninvasive diffusion MRI to determine the severity of peripheral nerve injury

ObjectivePrimary repair of peripheral nerves is recommended following transection; however, patient management following repair is challenged by a lack of biomarkers to nerve regeneration. Previous studies have demonstrated that diffusion magnetic resonance imaging (MRI) may provide viable biomarkers of nerve regeneration in injury models; though, these methods have not been systematically evaluated in graded partial transections and repairs.MethodsEx vivo diffusion MRI was performed in fixed rat sciatic nerve samples 4 or 12 weeks following partial nerve transection and repair (25% cut = 12, 50% cut = 12 and 75% cut = 11), crush injuries (n = 12), and sham surgeries (n = 9). Behavioral testing and histologic evaluation were performed in the same animals and nerve samples for comparison.ResultsDiffusion tractography provided visual characterizations of nerve damage and recovery consistent with the expected degree of injury within each cohort. In addition, quantitative indices from diffusion MRI correlated with both histological and behavioral evaluations, the latter of indicated full recovery for sham and crush nerves and limited recovery in all partially transected/repaired nerves. Nerve recovery between 4 and 12 weeks was statistically significant in partial transections 50% and 75% depth cuts (p = 0.043 and p = 0.022) but not for 25% transections.InterpretationOur findings suggest that DTI can i) distinguish different degrees of partial nerve transection following surgical repair and ii) map spatially heterogeneous nerve recovery (e.g., due to collateral sprouting) from 4 to 12 weeks in partially transected nerves.     

Vacuum-gap-based lumped element Josephson parametric amplifier

We propose a lumped element Josephson parametric amplifier with vacuum-gap-based capacitor.The capacitor is made of quasi-floating aluminum pad and on-chip ground.We take a fabrication process compatible with air-bridge technology,which makes our design adaptable for future on-chip integrated quantum computing system.Further engineering the input impedance,we obtain a gain above 20 dB over 162-MHz bandwidth,along with a quasi quantum-limit noise performance.This work should facilitate the development of quantum information processing and integrated superconducting circuit design.     

Relaxing solitons of a biaxial ferromagnet

Theoretical and Mathematical Physics - We use the Riemann problem on a torus to obtain and analyze new analytic solutions of the Landau–Lifshitz model that describe the nonlinear dynamics of...     

Time-dependent condensation of bosonic potassium

The European Physical Journal D - Much effort has been devoted to describing qualitatively and quantitatively electron scattering processes due to their ever-increasing importance in many...     

Experimental investigation for stability and surface properties of TiO2 and Al2O3 water-based nanofluids

Journal of Thermal Analysis and Calorimetry - Nanofluids have gained recent attention because of their potential applications in diverse engineering fields like enhancing thermal transport,...