1,3,5-三(羧基甲氧基)苯镍配位聚合物的合成、晶体结构及性质研究

采用溶剂热法,1,3,5-三(羧基甲氧基)苯为定向配体和乙酸镍反应构筑了一个新型的金属配位聚合物[Ni(TB)₂(H₂O)₂]_n·2H₂O,其中H₃TB=1,3,5-三(羧基甲氧基)苯,通过元素分析、IR及X射线单晶衍射对配合物结构进行表征,并研究其荧光性质、热稳定性及Hirshfeld表面作用力。单晶结构分析表明,该配合物属于三斜晶系,空间群$P \overline{1}$,配合物中心离子Ni(Ⅱ)分别与来自两个水分子上的氧原子及四个不同1,3,5-三(羧基甲氧基)苯配体的羧酸氧原子配位,形成六配位的NiO₆八面体构型,并通过与1,3,5-三(羧基甲氧基)苯配体的氧原子配位不断延伸形成具有孔洞结构的一维链状构型。配合物具有良好的荧光性能和热稳定性。Hirshfeld表面作用分析表明配合物分子中O…H/H…O作用占主导且占比为39.0%,而H…H的作用力占比为25.9%,O…O的作用力占比为13.6%。     

Semiconvergence analysis of the randomized row iterative method and its extended variants

The row iterative method is popular in solving the large‐scale ill‐posed problems due to its simplicity and efficiency. In this work we consider the randomized row iterative (RRI) method to tackle this issue. First, we present the semiconvergence analysis of RRI method for the overdetermined and inconsistent system, and derive upper bounds for the noise error propagation in the iteration vectors. To achieve a least squares solution, we then propose an extended version of the RRI (ERRI) method, which in fact can converge in expectation to the solution of the overdetermined or underdetermined, consistent or inconsistent systems. Finally, some numerical examples are given to demonstrate the convergence behaviors of the RRI and ERRI methods for these types of linear system.     

吸收波长和吸收效率可控的超材料吸收器

为了使超材料完美吸收器(metamaterial perfect absorber,MPA)能够同时实现吸收效率和吸收波长的控制,本文提出利用二氧化钒(VO2)和石墨烯作为MPA的材料,通过对MPA的结构设计,在红外波段实现了高吸收,吸收效率最高可达99%.研究发现通过改变VO2的温度和石墨烯的化学势,可同时实现MPA吸收效率和吸收波长的控制,吸收效率调制深度和吸收波长调谐范围分别可达97.08%和3.2μm.通过对MPA在吸收波长处的磁场分布分析可以得出,MPA能够产生高吸收是由于其形成了法布里-帕罗(Fabry-Pérot,FP)干涉腔共振,研究发现MPA的结构参数对FP腔的共振波长具有显著的影响.     

Crystal phase control in two-dimensional materials

It is the nature of crystals to exist in different polymorphs. The recent emergence of two-dimensional (2D) materials has evoked the discovery of a number of new crystal phases that are different from their bulk structures at ambient conditions, and revealed novel structure-dependent properties, which deserve in-depth understanding and further exploration. In this contribution, we review the recent development of crystal phase control in 2D materials, including group V and VI. transition metal dichalcogenides (TMDs), group IVA metal chalcogenides and noble metals. For each group of materials, we begin with introducing the various existing crystal phases and their structure-related properties, followed by a detailed discussion on factors that influence these crystal structures and thus the possible strategies for phase control. Finally, after summarizing the whole paper, we present the challenges and opportunities in this research direction.     

Piezoelectric Actuator Placement Optimization and Active Vibration Control of a Membrane Structure

The placement optimization of piezoelectric actuators and active vibration control of a membrane structure are studied in this paper. The classical linear quadratic regulator controllers are designed to suppress the unwanted vibration. Simulation results indicate that the optimal locations of piezoelectric actuators are affected deeply by the additional mass and stiffness of actuators, the computational efficiency of particle swarm optimizer is higher than that of genetic algorithm for this particular problem, and the control performance of optimally placed actuators is better than that of non-optimally placed actuators.     

Elucidating Molecule–Plasmon Interactions in Nanocavities with 2 nm Spatial Resolution and at the Single‐Molecule Level

The fundamental understanding of the subtle interactions between molecules and plasmons is of great significance for the development of plasmon‐enhanced spectroscopy (PES) techniques with ultrahigh sensitivity. However, this information has been elusive due to the complex mechanisms and difficulty in reliably constructing and precisely controlling interactions in well‐defined plasmonic systems. Herein, the interactions in plasmonic nanocavities of film‐coupled metallic nanocubes (NCs) are investigated. Through engineering the spacer layer, molecule–plasmon interactions were precisely controlled and resolved within 2 nm. Efficient energy exchange interactions between the NCs and the surface within the 1–2 nm range are demonstrated. Additionally, optical dressed molecular excited states with a huge Lamb shift of ≈7 meV at the single‐molecule (SM) level were observed. This work provides a basis for understanding the underlying molecule–plasmon interaction, paving the way for fully manipulating light–matter interactions at the nanoscale.     

ON THE EXISTENCE WITH EXPONENTIAL DECAY AND THE BLOW-UP OF SOLUTIONS FOR COUPLED SYSTEMS OF SEMI-LINEAR CORNER-DEGENERATE PARABOLIC EQUATIONS WITH SINGULAR POTENTIALS

In this article,we study the initial boundary value problem of coupled semi-linear degenerate parabolic equations with a singular potential term on manifolds with corner singularities.Firstly,we introduce the corner type weighted p-Sobolev spaces and the weighted corner type Sobolev inequality,the Poincare′inequality,and the Hardy inequality.Then,by using the potential well method and the inequality mentioned above,we obtain an existence theorem of global solutions with exponential decay and show the blow-up in finite time of solutions for both cases with low initial energy and critical initial energy.Significantly,the relation between the above two phenomena is derived as a sharp condition.Moreover,we show that the global existence also holds for the case of a potential well family.     

单晶金刚石p型和n型掺杂的研究

超宽禁带半导体材料金刚石在热导率、载流子迁移率和击穿场强等方面表现出优异的性质,在功率电子学领域具有广阔的应用前景。实现p型和n型导电是制备金刚石半导体器件的基础要求,其中p型金刚石的发展较为成熟,主流的掺杂元素是硼,但在高掺杂时存在空穴迁移率迅速下降的问题;n型金刚石目前主流的掺杂元素是磷,还存在杂质能级深、电离能较大的问题,以及掺杂之后金刚石晶体中的缺陷造成载流子浓度和迁移率都比较低,电阻率难以达到器件的要求。因此制备高质量的p型和n型金刚石成为研究者关注的焦点。本文主要介绍金刚石独特的物理性质,概述化学气相沉积法和离子注入法实现金刚石掺杂的基本原理和参数指标,进而回顾两种方法进行单晶金刚石薄膜p型和n型掺杂的研究进展,系统总结了其面临的问题并对未来方向进行了展望。     

TFSI钝化晶体硅表面性质的第一性原理研究

晶体硅表面钝化是高效率晶体硅太阳能电池的核心技术,直接影响晶体硅器件的性能。本文采用第一性原理方法研究了一种超强酸-双三氟甲基磺酰亚胺(TFSI)钝化晶体硅(001)表面。研究发现,TFSI的四氧原子结构能够与Si(001)表面Si原子有效成键,吸附能达到-5.124 eV。电子局域函数研究表明,TFSI的O原子与晶体硅表面的Si的成键类型为金属键。由态密度和电荷差分密度分析可知,Si表面原子的电子向TFSI转移,从而有效降低了Si表面的电子复合中心,有利于提高晶体硅的少子寿命。Bader电荷显示,伴随着TFSI钝化晶体硅表面的Si原子,表面Si原子电荷电量减少,而TFSI中的O原子和S原子电荷电量相应增加,进一步证明了TFSI钝化Si表面后的电子转移。该工作为第一性原理方法预测有机强酸钝化晶体硅表面的钝化效果提供了数据支撑。