排序方式: 共有9条查询结果,搜索用时 15 毫秒
1
1.
2.
该文讨论了非平稳负(正)相依序列加权和的几乎处处中心极限定理,改进并推广了相依序列几乎处处中心极限定理的相关结果. 相似文献
3.
In this article we study the empirical likelihood inference for AR(p) model. We propose the moment restrictions, by which we get the empirical likelihood estimator of the model parametric, and we also propose an empirical log-likelihood ratio base on this estimator. Our result shows that the EL estimator is asymptotically normal, and the empirical log-likelihood ratio is proved to be asymptotically standard chi-squared. 相似文献
4.
As to the acronym NEAR(p), it means "New Exponential Autoregressive Process of order p". The NEAR(p) model is denned by where α0,α1,α2… are non-negative and sum to unity, and the residual sequence{εt} is defined as where q1, q2, … , qp+1 are non-negative and sum to unity, and {Et} is an independent and identically distributed (i.i.d.) sequence of standard exponential variants. Chan showed necessary and sufficient conditions for the existence of a stationary and ergodic NEAR(p) model. 相似文献
5.
为了提高器件的可靠性和使用寿命,设计并研制了一种将p-n结和有源层分开的高功率AlGaAs/GaAs单量子阱远异质结(SQW-RJH)激光器,发射波长为808nm,腔长900μm,条宽100μm,其外延结构与通常的808nm AlGaAs/GaAs单量子阱半导体激光器的结构不同,在p-n结和有源区间多了一层p型AlGaAs层,其厚度约为0.1μm。为减小衬底表面位错对外延层质量的影响,在n^ -GaAs衬底和n-Al0.5Ga0.5As下包层间加一层n^ -GaAs缓冲层。对器件进行了电导数测试及恒流电老化实验。与常规AlGaAs/GaAs大功率半导体激光器相比,远结大功率半导体激光器具有阈值电流Ith偏大、导通电压Vth偏高的直流特性。3000h的恒流电老化结果表明,器件在老化初期表现出阈值电流随老化时间缓慢下降,输出功率随老化时间缓慢上升的远结特性。 相似文献
6.
7.
8.
1