Unexpected Hole Doping of Graphene by Osmium Adatoms

The electronic transport of monolayer graphene devices is studied before and after in situ deposition of a sub-monolayer coating of osmium adatoms. Unexpectedly, and unlike all other metallic adatoms studied to date, osmium adatoms shift the charge neutrality point to more positive gate voltages. This indicates that osmium adatoms act as electron acceptors and thus leave the graphene hole-doped. Analysis of transport data suggest that Os adatoms behave as charged impurity scatterers, albeit with a surprisingly low charge-doping efficiency. The charge neutrality point of graphene is found to vary non-monotonically with gate voltage as the sample is warmed to room temperature, suggesting that osmium diffuses on the surface but is not completely removed.     

Accurate correction of arbitrary spin fermion quantum tunneling from non-stationary Kerr-de Sitter black hole based on corrected Lorentz dispersion relation

According to a corrected dispersion relation proposed in the study on the string theory and quantum gravity theory, the Rarita-Schwinger equation was precisely modified, which resulted in the Rarita-Schwinger-Hamilton-Jacobi equation. Using this equation, the characteristics of arbitrary spin fermion quantum tunneling radiation from non-stationary Kerr-de Sitter black holes were determined. A number of accurately corrected physical quantities, such as surface gravity, chemical potential, tunneling probability, and Hawking temperature, which describe the properties of black holes, were derived. This research has enriched the research methods and enabled increased precision in black hole physics research.     

对自由落体的诺维科夫时间与牛顿绝对时间关系讨论

文章首先将史瓦西黑洞场中自由下落质点的固有时(诺维科夫坐标时)公式,由自然单位制化成了国际单位制中的形式.然后,根据牛顿第二定律和万有引力定律,推导出了自由下落质点经历的绝对时间公式,进而证明了广义相对论中自由落体经历的固有时,恰好等于牛顿力学给出的绝对时间.最后,对自由下落质点在黑洞内外经历的时间进行了特例计算.     

Time dependent Schrödinger equation for black hole evaporation: No information loss

In 1976 S. Hawking claimed that “Because part of the information about the state of the system is lost down the hole, the final situation is represented by a density matrix rather than a pure quantum state”. ¹ This was the starting point of the popular “black hole (BH) information paradox”.     

One Way Traffic: Base-to-Backbone Hole Transfer in Nucleoside Phosphorodithioate

The directionality of the hole-transfer processes between DNA backbone and base was investigated by using phosphorodithioate [P(S⁻)=S] components. ESR spectroscopy in homogeneous frozen aqueous solutions and pulse radiolysis in aqueous solution at ambient temperature confirmed initial formation of G^.+-P(S⁻)=S. The ionization potential of G-P(S⁻)=S was calculated to be slightly lower than that of guanine in 5′-dGMP. Subsequent thermally activated hole transfer from G^.+ to P(S⁻)=S led to dithiyl radical (P-2S^.) formation on the μs timescale. In parallel, ESR spectroscopy, pulse radiolysis, and density functional theory (DFT) calculations confirmed P-2S^. formation in an abasic phosphorodithioate model compound. ESR investigations at low temperatures and higher G-P(S⁻)=S concentrations showed a bimolecular conversion of P-2S^. to the σ²-σ*¹-bonded dimer anion radical [-P-2S 2S-P-]⁻ [ΔG (150 K, DFT)=−7.2 kcal mol⁻¹]. However, [-P-2S 2S-P-]⁻ formation was not observed by pulse radiolysis [ΔG° (298 K, DFT)=−1.4 kcal mol⁻¹]. Neither P-2S^. nor [-P-2S 2S-P-]⁻ oxidized guanine base; only base-to-backbone hole transfer occurs in phosphorodithioate.     

形状记忆合金椭圆孔口问题的有限单元法

基于Lagoudas形状记忆合金(SMA)三维本构模型,假设材料为各向同性,推导了SMA平面应力状态的增量型本构方程,继而编写了ABAQUS用户自定义材料(UMAT)子程序,研究了在双向拉伸情况下,外载荷、温度、椭圆孔口长短轴之比对超弹性SMA椭圆孔口板中应力诱发马氏体相变区的影响。数值结果表明:应力诱发马氏体相变首先发生在椭圆孔口长轴端点部位,在外加载荷作用下逐渐扩展到板内,并由内向外形成马氏体相区、相变混合区和奥氏体相区;SMA板内应力诱发马氏体完全相变区面积与施加外载荷成正相关,与温度成负相关;随着椭圆孔口长短轴之比增大,SMA板内应力诱发马氏体完全相变区面积呈现出先减小后增大的趋势;拉应力差值相同时,相较于拉应力沿椭圆孔口长轴方向较大的情况,当拉应力沿椭圆孔口短轴方向较大时,SMA板内完全相变区面积较大,椭圆孔口周边应力集中现象更明显。     

Hole/Electron Transporting Materials for Nonfullerene Organic Solar Cells

Nonfullerene acceptor based organic solar cells (NF-OSCs) have witnessed rapid progress over the past few years owing to the intensive research efforts on novel electron donor and nonfullerene acceptor (NFA) materials, interfacial engineering, and device processing techniques. Interfacial layers including electron transporting layers (ETL) and hole transporting layers (HTLs) are crucially important in the OSCs for facilitating electron and hole extraction from the photoactive blend to the respective electrodes. In this review, the lates progress in both ETLs and HTLs for the currently prevailing NF-OSCs are discussed, in which the ETLs are summarized from the categories of metal oxides, metal chelates, non-conjugated electrolytes and conjugated electrolytes, and the HTLs are summarized from the categories of inorganic and organic materials. In addition, some bifunctional interlayer materials served as both ETLs and HTLs are also introduced. Finally, the prospects of ETL/HTL materials for NF-OSCs are provided.     

Experimental Charge Density Evidence for Pnicogen Bonding in a Crystal of Ammonium Chloride

Chemical binding in crystalline ammonium chloride, a simple inorganic salt with an unexpectedly complex bonding pattern, was studied by using a topological analysis of electron density function derived from high‐resolution X‐ray diffraction. Supported by periodic quantum chemical calculations, it provided experimental evidence for weak σ‐hole bonds (1.5 kcal mol^?1) that involve ammonium cations in a crystal. Our results show this type of supramolecular interaction to be more numerous than has been found to date by using gas‐phase calculations or statistical analysis of CSD.     

TiO_2/Ag_2NCN复合光催化剂的制备与可见光催化性能

利用银盐与单氰胺水溶液的沉淀反应,通过共混不同质量分数的纳米TiO2粒子制备了TiO2/Ag2NCN复合光催化剂.使用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、傅里叶变换红外(FTIR)光谱仪和紫外-可见(UV-Vis)吸收光谱仪对复合光催化剂的结构进行了表征.结果表明,锐钛矿相TiO2纳米颗粒沉积在Ag2NCN表面形成异质结构,二者间以弱的物理作用力相结合.TiO2的掺杂使得复合颗粒的UV-Vis吸收光谱发生红移,带隙变窄.以亚甲基蓝(MB)为光催化降解对象,研究了TiO2/Ag2NCN复合颗粒的可见光催化活性.结果表明,与单一Ag2NCN相比,复合颗粒表现出增强的光催化性能.对TiO2/Ag2NCN复合颗粒的光催化反应动力学过程及光催化机理进行了探讨.     

Charge Transfer Properties of Organic Semiconductor Molecules of Perylene Derivatives

The charge transfer rates of perylene and its four derivatives were studied at the level of B3LYP/6-31G** by density functional theory. The results showed that the perylene and its four derivatives belonged to the semiconductor molecules, which released energy when electron was injected. Therefore, they were suitable to be used as the electron injection material. The introduction of OH group can improve the electron transfer rate significantly. The formations of intramolecular hydrogen bonds were unfavorable to the hole transfer, but conducive to the electron transfer. The perylene derivatives, 2,5-3,4,5-(trifluorophenyl)ethynyl-8,11-3,4,5-trihydroxyphenyl ethynyl, designed in this article had the hole transfer rate of 1.57 cm2/V·s-1. Therefore, this kind of material will be potential hole transfer material with high transfer efficiency.