单层MXene纳米片Ti2N电磁特性的过渡金属(Sc、V、Zr)掺杂效应

二维材料MXene纳米片由于具有较大的比表面积和较高的电子迁移率而受到广泛的关注。本文采用基于密度泛函理论的第一性原理计算,对单层MXene纳米片Ti₂N电磁特性的过渡金属(Sc、V、Zr)掺杂效应进行了系统研究。结果表明,所有过渡金属掺杂体系结合能均为负值,结构均稳定;其中Ti₂N-Sc体系的形成能为-2.242 eV,结构更易形成,且保持稳定;掺杂后Ti₂N-Sc、Ti₂N-Zr体系磁矩增大;此外,Ti₂N-Sc体系中保留了较高的自旋极化率,达到84.9%,可预测该体系在自旋电子学中具有潜在的应用价值。     

Generalized gradient approximation adjusted to transition metals properties: Key roles of exchange and local spin density

Perdew-Burke-Ernzerhof (PBE) and PBE adapted for solids (PBEsol) are exchange-correlation (xc) functionals widely used in density functional theory simulations. Their differences are the exchange, μ, and correlation, β, coefficients, causing PBEsol to lose the Local Spin Density (LSD) response. Here, the μ/β two-dimensional (2D) accuracy landscape is analyzed between PBE and PBEsol xc functional limits for 27 transition metal (TM) bulks, as well as for 81 TM surfaces. Several properties are analyzed, including the shortest interatomic distances, cohesive energies, and bulk moduli for TM bulks, and surface relaxation degree, surface energies, and work functions for TM surfaces. The exploration, comparing the accuracy degree with respect experimental values, reveals that the found xc minimum, called VV, being a PBE variant, represents an improvement of 5% in mean absolute percentage error terms, whereas this improvement reaches ~11% for VVsol, a xc resulting from the restoration of LSD response in PBEsol, and so regarded as its variant.     

Pressure controllable phase transition in MoTe2 by the interlayer band occupancy

High pressure can effectively control the phase transition of MoTe₂ in experiment, but the mechanism is still unclear. In this work, we show by first-principles calculations that the phase transition is suppressed and $1T^{\prime }$ phase becomes more stable under high pressure, which originates from the pressure-induced change of the interlayer band occupancies near the Fermi energy. Specifically, the interlayer states of $1T^{\prime }$ phase tend to be fully occupied under high pressure, while they keep partially occupied for the $T_d$ phase. The increase of the band occupancies makes the $1T^{\prime }$ phase more favorable in energy and prevents the structure changing from $1T^{\prime }$ to $T_d$ phase. Moreover, we also analyze the superconductivity under high pressure based on BCS theory by calculating the density of states and phonon spectra. Our results may shed some light on understanding the relationship between the interlayer band occupancy and crystal stability of MoTe₂ under high pressures.     

Minimal kernels of Dirac operators along maps

Let M be a closed spin manifold and let N be a closed manifold. For maps and Riemannian metrics g on M and h on N, we consider the Dirac operator of the twisted Dirac bundle . To this Dirac operator one can associate an index in . If M is 2‐dimensional, one gets a lower bound for the dimension of the kernel of out of this index. We investigate the question whether this lower bound is obtained for generic tupels .     

Enhanced 1T′-Phase Stabilization and Chemical Reactivity in a MoTe2 Monolayer through Contact with a 2D Ca2N Electride

Among the widely studied 2D transition metal dichalcogenides (TMDs), MoTe₂ has attracted special interest for phase-change applications due to its small 2H-1T′ energy difference, yet a large scale phase transition without structural disruption remains a significant challenge. Recently, an interesting long-range phase engineering of MoTe₂ has been realized experimentally by Ca₂N electride. However, the interface formed between them has not been well understood, and moreover, it remains elusive how the presence of Ca₂N would affect the basal plane reactivity of MoTe₂. To address this, we performed density functional theory (DFT) calculations to investigate the potential of tuning the phase stability and chemical reactivity of a MoTe₂ monolayer via interacting with Ca₂N to form a van der Walls heterostructure. We found that the contact nature at the 2H-MoTe₂/Ca₂N interface is Schottky-barrier-free, allowing for the spontaneous electron transfer from Ca₂N to 2H-MoTe₂ to make it strongly n-type doped. Moreover, Ca₂N doping significantly lowers the energy of 1T′-MoTe₂ and dynamically triggers the 2H-to-1T′ transformation. The Ca₂N-induced phase modulation can also be applied to tune the phase energetics of MoS₂ and MoSe₂. Furthermore, using H adsorption as the testing ground, we also find that the H binding on the basal plane of MoTe₂ is enhanced after forming heterostructure with Ca₂N, potentially providing basis for surface modification and other related catalytic applications.     

Nonmetal-to-metal transition in dense fluid helium

The nonmetal-to-metal transition in dense fluid helium is discussed, which has been, in analogy to metallization of hydrogen, predicted as first-order plasma phase transition using chemical models for the equation of state and plasma composition. However, recent ab initio simulations performed for dense fluid helium indicate that this transition is continuous in the considered regime, without a density jump and latent heat as characteristic of a first-order phase transition. Implications for some astrophysical plasmas are discussed.     

Transient transition behaviors of fractional-order simplest chaotic circuit with bi-stable locally-active memristor and its ARM-based implementation

This paper proposes a fractional-order simplest chaotic system using a bi-stable locally-active memristor. The characteristics of the memristor and transient transition behaviors of the proposed system are analyzed, and this circuit is implemented digitally using ARM-based MCU. Firstly, the mathematical model of the memristor is designed, which is nonvolatile, locally-active and bi-stable. Secondly, the asymptotical stability of the fractional-order memristive chaotic system is investigated and some sufficient conditions of the stability are obtained. Thirdly, complex dynamics of the novel system are analyzed using phase diagram, Lyapunov exponential spectrum, bifurcation diagram, basin of attractor, and coexisting bifurcation, coexisting attractors are observed. All of these results indicate that this simple system contains the abundant dynamic characteristics. Moreover, transient transition behaviors of the system are analyzed, and it is found that the behaviors of transient chaotic and transient period transition alternately occur. Finally, the hardware implementation of the fractional-order bi-stable locally-active memristive chaotic system using ARM-based STM32F750 is carried out to verify the numerical simulation results.