Transport Characteristics of Mesoscopic Radio-Frequency Single Electron Transistor

The transport property of a quantum dot under the influence of external time-dependent field is investigated. The mesoscopic device is modelled as semiconductor quantum dot coupled weakly to superconducting leads via asymmetric double tunnel barriers of different heights. An expression for the current is deduced by using the Landauer-Buttiker formula, taking into consideration of both the Coulomb blockade effect and the magnetic field. It is found that the periodic oscillation of the current with the magnetic field is controlled by the ratio of the frequency of the applied ac-field to the electron cyclotron frequency. Our results show that the present device operates as a radio-frequency single electron transistor.     

Single-Photon Emission from a Single InAs Quantum Dot

Excitation power-dependent micro-photoluminescence spectra and photon-correlation measurement are used to study the optical properties and photon statistics of single InAs quantum dots. Exciton and biexciton emissions, whose photoluminescence intensities have linear and quadratic excitation power dependences, respectively, are identified. Under pulsed laser excitation, the zero time delay peak of second order correlation function corresponding to exciton emission is well suppressed, which is a clear evidence of single photon emission.     

Observation of Nano-Dots on HOPG Surface Induced by Highly Charged Arq+ Impact

Highly charged ions （HCIs） have huge potential energy due to their high charge state. When a HCI reaches a solid surface, its potential energy is released immediately on the surface to cause a nano-scale defect. Thus, HCIs are expected to be useful for solid-surface modifications on the nano-scale. We investigate the defects on a highly oriented pyrolytic graphite （HOPG） surface induced by slow highly charged Ar^q＋ ions with impact energy of 20-2000qeV with scanning probe microscopy （SPM）. In order to clarify the role of kinetic and potential energies in surface modification, the nano-defects are characterized in lateral size and height corresponding to the kinetic energy and charge state of the HCIs. Both the potential energy and kinetic energy of the ions may influence the size of nano-defect. Since potential energy increases dramatically with increasing charge state, the potential energy effect is expected to be much larger than the kinetic energy effect in the case of extremely high charge states. This implies that pure surface modification on the nano-scale could be carried out by slow highly charged ions. The mean size of nano-defect region could also be controlled by selecting the charge state and kinetic energy of HCI.     

Spin Pumping from a Quantum Dot in the Presence of Decoherence

We study the pumped spin current of an interacting quantum dot tunnel coupled to a single lead in the presence of electron spin resonance （ESR） field. The spin decoherence in the dot is included by the Bffttiker approach. Using the nonequilibrium Green＇s function technique, we show that ESR-induced spin flip can generate finite spin current with no charge transport. Both the Coulomb interaction and spin decoherence decrease the amplitude of spin current. The dependence of pumped spin current on the intensity and frequency of ESR field, and the spin decoherence is discussed.     

Temperature Dependence of Photoluminescence from Single and Ensemble InAs/GaAs Quantum Dots

We investigate the temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots systematically. As temperature increases, the exciton emission peak for single quantum dot shows broadening and redshift. For ensemble quantum dots, however, the exciton emission peak shows narrowing and fast redshift. We use a simple steady-state rate equation model to simulate the experimental data of photoluminescence spectra. It is confirmed that carrier-phonon scattering gives the broadening of the exciton emission peak in single quantum dots while the effects of carrier thermal escape and retrapping play an important role in the narrowing and fast redshift of the exciton emission peak in ensemble quantum dots.     

发展固态量子信息与计算的实验研究

量子计算与量子信息是21世纪基础和应用科学研究的一大挑战.要实现实用意义上的量子信息和量子计算,必须解决量子比特系统的可拓展性问题.基于现代半导体技术的固态量子系统,其应用和最终产业化的可行性较高.然而,固态量子体系受周边环境的影响比较严重,控制其退相干,维持其量子状态的难度更高.实验固态量子计算的研究是个新的领域,尚无实用的技术和方法. 文章介绍了中国科学院物理研究所固态量子信息和计算实验室近几年来新开辟的自旋、冷原子、量子点(包括原子空位)、功能氧化物和关联体系等固态量子信息的新载体和同量子计算与量子信息相关的科学与技术难题的实验研究.     

虹的几何光学原理

以反射、折射、色散、笛卡儿光线、最小偏向角、对日点等基本概念为基础,解释了"雨后复斜阳,彩虹舞当空"的成因,初步阐明了虹可以观测的基本外显特点的物理机制.并强调,对虹现象的理论解释,也随物理学的发展而日益完善.     

碳纳米管量子点的电子输运

在紧束缚近似下,利用常量相互作用模型和Landauer-Bütticker公式,计算了扶手椅型和金属锯齿型碳纳米管量子点的电导。发现,根据碳纳米管量子点的长度的不同,扶手椅型碳纳米管量子点的电导可以具有两电子或四电子的壳层结构。而锯齿型碳纳米管量子点的电导却仅有四电子的壳层结构,与长度无关;这些理论结果与之前的实验结果符合的很好。     

水溶性CdTe量子点的三阶光学非线性极化特性

利用超短脉冲Z扫描技术和光学Kerr效应研究了以巯基丙酸为稳定剂的CdTe量子点水溶液的三阶光学非线性极化特性. 在532nm,30ps和800nm,130fs脉冲激光激发下, 发现分别具有正负相反取值的三阶光学非线性折射率,自由载流子吸收和双光子吸收分别是这两种脉冲激光激发下三阶光学非线性吸收的起因. 测量得到CdTe量子点的三阶光学非线性极化率约为CS₂的32倍, 在520—700nm光谱区的CdTe量子点的光学响应时间小于400fs. 关键词： CdTe量子点(QDs) Z扫描 三阶光学非线性极化特性 双光子吸收     

T型耦合双量子点系统的非对等Kondo共振分裂传输

利用隶玻色子平均场近似理论,并借助于单杂质的Anderson模型的哈密顿量,研究了T型耦合双量子点嵌入正常电极的基态输运性质.结果表明：在体系处于平衡状态时,随着双量子点的耦合强度增加,体系的Kondo 效应被削弱. 当耦合强度足够强时,Kondo量子点态密度的Kondo共振单峰分裂成两个不对等的Kondo共振双峰.在体系处于非平衡状态时,增加两电极的偏压,态密度的Kondo分裂的非对等性明显加强. 关键词： Kondo效应 态密度 格林函数法 耦合双量子点