基于磁开关的重复频率冲击电压发生器

用磁开关取代传统冲击电压发生器的放电球隙,利用磁开关可高重复频率工作和磁压缩陡化的特点和冲击电压发生器"并联充电,串联放电"的特点,可形成重复频率快前沿高压脉冲。建造了基于磁开关的冲击电压发生器,试验表明:其重复频率可达1 kHz,在1 nF的电容负载上可形成17 kV,上升时间小于80 ns的高压脉冲。     

测量强光一号负载电压的电容分压器

以“强光一号”加速器为例,给出了一种可以对其阴阳极间负载电压进行直接测量的自积分式电容分压器。介绍了自积分式电容分压器的结构,并通过静电场模拟分析了该分压器结构并不会对阴阳极间隙电场造成明显影响,在此基础上利用方波电压源对其进行了响应实验从而获得其频率响应,并对电容分压器的分压比进行了在线标定,最终给出了利用该自积分式电容分压器测量短路状态时阴阳极间隙电压测量结果。     

基于金属氧化物半导体场效应管的Marx发生器

给出了一种基于半导体开关的脉冲功率源的设计原理和方法。与标准的Marx发生器相比,用金属氧化物半导体场效应管(MOSFET)替代气体火花隙开关,用二极管替代电阻,由于可重复频率运行,所以能够有效地减少电路损耗。由于电路器件特性差异不同,在实验中采取对每一级的开关驱动信号进行单独调节,以补偿器件差异对同步性带来的影响。另外,实验对开关进行光纤隔离,而对强弱电的隔离采用DC-DC转换器,这不仅有利于保护实验设备,而且对Marx多级电路的同步性也有很大的贡献。设计的Marx发生器级数为16级,并给出了单次脉冲和重复频率两种情况下的实验结果。     

结构紧凑陶瓷电容器型脉冲调制器

设计了一种结构紧凑的陶瓷电容器型脉冲调制器,对其电路进行了理论计算,分析了主要参数对调制器输出波形的影响,并用PSpice软件建立电路模型进行验证,模拟结果与理论计算结果相符较好。该调制器能够产生上升前沿小于10 ns、脉宽30~40 ns、幅度为100~200 kV的可调高电压脉冲。该调制器用陶瓷电容器作为储能器件,用SF6作为绝缘介质,是一种无液体的脉冲调制器,具有结构紧凑、体积小、重量轻等特点。     

测量强光一号负载电压的电容分压器

 以“强光一号”加速器为例,给出了一种可以对其阴阳极间负载电压进行直接测量的自积分式电容分压器。介绍了自积分式电容分压器的结构,并通过静电场模拟分析了该分压器结构并不会对阴阳极间隙电场造成明显影响,在此基础上利用方波电压源对其进行了响应实验从而获得其频率响应,并对电容分压器的分压比进行了在线标定,最终给出了利用该自积分式电容分压器测量短路状态时阴阳极间隙电压测量结果。     

快前沿直线脉冲变压器驱动源多间隙气体开关

进行了一种可用于快前沿直线脉冲变压器驱动源系统的多间隙气体开关的设计和实验,给出了开关的静态放电实验结果,获得了静态击穿电压平均值及标准偏差随气体压强的变化规律。开关充0.15 MPa干燥空气时,最高耐压可以达到200 kV。研究了开关在不同欠压比和不同触发脉冲幅值下的触发特性。开关工作电压150 kV、欠压比78.5%、触发电压70 kV时,开关的触发延迟时间34.4 ns,抖动1.6 ns。开关经过5 000余次放电,击穿点分布均匀,可以形成多通道放电。开关结构新颖,安装操作简便,装配精度大大提高,实用性强。     

Mode control in a high-gain relativistic klystron amplifier

Middle cavities between the input and output cavity can be used to decrease the required input RF power for the relativistic klystron amplifier. Meanwhile higher modes, which affect the working mode, are also easy to excite in a device with more middle cavities. In order for the positive feedback process for higher modes to be excited, a special measure is taken to increase the threshold current for such modes. Higher modes＇ excitation will be avoided when the threshold current is significantly larger than the beam current. So a high-gain S-band relativistic klystron amplifier is designed for the beam of current 5 kA and beam voltage 600 kV. Particle in cell simulations show that the gain is 1.6 × 10^5 with the input RF power of 6.8 kW, and that the output RF power reaches 1.1 GW.     

Rectifying and Photovoltage Properties of ZnO:Al/p-Si Heterojunction

An Al-doped ZnO/p-Si heterojunction is fabricated by a laser molecular beam epitaxy technique. The abnormally high ideality factors （n 〉〉 2） of the prepared heterojunction are observed in the interim bias voltage range. A theoretical model is proposed to understand the much higher ideality factor of the special heterojunction diode. The ZnO：Al film shows metal-like conductivity with the electrical resistivity about 6.56 × 10-4 Ω·cm at room temperature. The temperature dependence of the photovoltage indicates that the photovoltaic effect of the Al-doped ZnO based heterojunction can be changed by the intrinsic metal-semiconductor transition at 120 K.     

滚齿切削力矩的测试及其分析

本文介绍一用于测试滚齿切削力矩的测试系统,该系统开发利用８０９８单片机数据采集技术,并结合电压频率转换技术和光电耦合,实现了信号的无接触传输。应用该测试系统,作者实验分析了滚齿切削过程力矩的基本变化规律,并对滚齿过程的力矩变化作了定性和定量分析,为进一步探讨滚齿切削规律提供了有利的实验依据     

TiO2负载型催化剂及光催化还原CO2反应的表面光电压谱研究

The study of mechanism of modified TiO₂ photocatalysts for photoreduction of CO₂ with surface photovoltage spectrum(SPS) was reported for the first time．The results showed that a new surface photovoltaic response band appears in the SPS curve of Pd/TiO₂ or Pd/RuO₂/TiO₂ in near IR region,moreover,the stronger SPS response intensity in near IR is,the higher the catalytic activities of photoreduction of CO₂．The surface state plays a role in the process of photocatalysis．