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991.
采用VHF-PECVD技术在玻璃衬底上沉积微晶硅锗薄膜.研究了衬底温度对微晶硅锗薄膜的微结构和光电特性的影响.结果表明:随着衬底温度的升高,微晶硅锗薄膜的生长速率减小,(220)晶向强度增强;而同一衬底温度下,锗浓度的增加将抑制薄膜(220)晶向的生长,通过相应地提高衬底温度可以解决这一问题.利用生长基团在薄膜生长表面的扩散理论对实验结果进行了解释.  相似文献   
992.
The substrate stretch experiment, which is carried out on several kinds of adherent cells, is usually used to catch the physiological variation and morphological response to cyclic substrate deformation. In this paper, stretch loading was exerted on cardiac myocytes cultured on silica substrates using a custom-made substrate stretch device. The effect of stretch on the alignment orientation of cardiac myocytes was studied through morphocytological statistics. Under cyclic stretch stimulus, the long axes of cardiac myocytes oriented perpendicularly to the stretch direction for continuous stretch acting. However, the mechanism underlying these behaviors is not well understood from such in vitro tests. Finite element (FE) model was developed in the analysis to investigate these behaviors. Xu-Needleman formulation was used to define the interaction behavior for contact surfaces between cell and substrate. The role of cell viscoelasticity nature is studied in adherent cell debonding with the substrate and aligning perpendicular to the stretch direction during long time cyclic stretch stimulation. There were four different strain magnitudes considered in the simulation to find out the cell debonding affected by the cyclic strains. The potential role of cyclic strain frequency in regulating cell debonding and alignment was also studied using FE analysis.  相似文献   
993.
Cell quantification is widely used both in basic and applied research. A typical example of its use is drug discovery research. Presently, plenty of methods for cell quantification are available. In this review, the basic techniques used for cell quantification, with a special emphasis on techniques based on fluorescent DNA dyes, are described. The main aim of this review is to guide readers through the possibilities of cell quantification with various methods and to show the strengths and weaknesses of these methods, especially with respect to their sensitivity, accuracy, and length. As these methods are frequently accompanied by an analysis of cell proliferation and cell viability, some of these approaches are also described.  相似文献   
994.
GaN薄膜材料广泛应用于发光二极管(LED),激光二极管(LD)等光电器件。但是GaN基器件的制备与应用以及器件推广很大一部分取决于其器件的价格,常用的方式是在单晶蓝宝石衬底上沉积制备GaN薄膜样品,单晶蓝宝石衬底晶向择优,可以制备出高质量的GaN薄膜样品,但是单晶蓝宝石衬底价格昂贵,一定程度上限制了其GaN基器件推广使用。如何在廉价衬底上直接沉积高质量的GaN薄膜,满足器件的要求成为研究热点。石英玻璃价格廉价,但是属于非晶体,没有择优晶向取向,很难制备出高质量薄膜样品。本研究采用等离子体增强金属有机物化学气相沉积系统在非晶普通石英衬底上改变氮气反应源流量低温制备GaN薄膜材料。制备之后采用反射高能电子衍射谱、X射线衍射光谱、室温透射光谱和光致光谱对制备的薄膜进行系统的测试分析。其结果表明:在氮气流量适当的沉积参数条件下,所制备的薄膜具有高C轴的择优取向,良好的结晶质量以及优异的光学性能。  相似文献   
995.
The biological functions of ATPases, such as myosin, kinesin, and ABC transporter, are due to large conformational motions driven by energy obtained from ATP. Elucidation of the mechanisms underlying these ATP-driven movements is one of the greatest challenges in computational chemistry. It has been shown that the MARTINI coarse-grained method is a promising tool for the investigation of large conformational motions in various proteins. However, this method has not yet been applied to ATPases because of the lack of a force field for the ATP molecule. Here, we developed force field parameters for the ATP molecule and conducted simulations using these parameters for the subunits (MalK2) and the full-length structure (MalFGK2-E) of a maltose transporter. It was found for both targets that the dimerization of the nucleotide binding domains (NBDs) is induced upon ATP binding. Moreover, for the full-length transporter, the conformational transition from the pre-translocation state to the outward-facing state was observed and was accompanied by an initial transport motion of the substrate. It is expected that coarse-grained simulations utilizing the parameters for the ATP molecule developed here will serve as a powerful tool for investigating other ATPases as well. © 2019 Wiley Periodicals, Inc.  相似文献   
996.
A facile and efficient acid-catalyzed cascade reaction for the synthesis of novel biheteroaryl structural motifs containing densely functionalized furans has been developed. The reaction sequence involves a Knoevenagel condensation of arylglyoxals with aroyl or heteroaroylacetonitrile and subsequently an isocyanide insertion via formal [4+1] cycloaddition followed by rapid [1,3]-H shift to afford uniquely decorated novel biheterocycles. Furthermore, the scope of the methodology was extended to diverse biheteroaryls by employing 3-(2-furyl)-3-oxopropanenitrile, 3-cyanoacetyl-1-methylindole, 3-oxo-3-(1H-pyrrol-2-yl)propanenitrile, 3-(1H-indol-3-yl)-3-oxopropanenitrile, 3-Oxo-3-(2-thienyl)propionitrile and benzoylacetonitriles.  相似文献   
997.
The distribution of X-ray radiation from a small particle, situated near the sharp edge of a flat substrate and excited by an electron beam, is analyzed theoretically taking into account the effects of the radiation reflection and its partial penetration through the substrate lateral surface. It has been shown that in some cases this dependence is strongly related to the distribution of primary X-ray sources above the substrate, which allows to use the signal — grazing-angle dependence for structure investigations of particles. The proposed technique was tested in experiments with CaCO3 particles, situated on a pure Si substrate and exposed to a highly concentrated HNO3 environment. Comparison of the observed angle dependencies for Ca and O characteristic X-ray radiation with calculated results revealed the intrinsic structure of the particles caused by their preliminary chemical treatment.  相似文献   
998.
摩擦基板间液晶薄层的分子场理论   总被引:3,自引:1,他引:2  
张志东  孔浩  薛山岭 《计算物理》2001,18(5):443-446
提出一种新的表面作用势用于描写摩擦基板对液晶分子的作用.通过分子场理论研究摩擦基板间的液晶薄层,基板作用使液晶分子沿面平行排列.采用Lebwohl Lasher模型,将分子质心固定在简单立方晶格的格点上.对20个分子层构成的液晶薄层进行了数值计算.存在3种分子优先取向方向不同的状态,优先取向方向沿摩擦方向的状态具有最低自由能,并考虑了基板作用引起的双轴对称性.  相似文献   
999.
王彦刚  许铭真  谭长华 《中国物理》2007,16(11):3502-3506
The low voltage substrate current (Ib) has been studied based on generation kinetics and used as a monitor of interface states (Nit) generation for ultra-thin oxide n-MOSFETs under constant voltage stress. It is found that the low voltage Ib is formed by electrons tunnelling through interface states, and the variations of Ib(△Ib) are proportional to variations of Nit (△Nit). The Nit energy distributions were determined by differentiating Nit(Vg). The results have been compared with that measured by using gate diode technique.[第一段]  相似文献   
1000.
AlN/GaN superlattice buffer is inserted between GaN epitaxial layer and Si substrate before epitaxial growth of GaN layer. High-quality and crack-free GaN epitaxial layers can be obtained by inserting AlN/GaN superlattice buffer layer. The influence of AlN/GaN superlattice buffer layer on the properties of GaN films are investigated in this paper. One of the important roles of the superlattice is to release tensile strain between Si substrate and epilayer. Raman spectra show a substantial decrease of in-plane tensile strain in GaN layers by using AlN/GaN superlattice buffer layer. Moreover, TEM cross-sectional images show that the densities of both screw and edge dislocations are significantly reduced. The GaN films grown on Si with the superlattice buffer also have better surface morphology and optical properties.  相似文献   
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