用于脉冲γ强度测量的Ф60,1000μmPIN探测器

采用电阻率为10000—20000Ω.cm的高阻单晶硅材料,研制成功灵敏区尺寸为60mm,耗尽层厚度~1000μm的大面积厚PIN半导体探测器.设计了该类探测器厚度测量专用的反冲质子测量系统,对探测器的时间响应、γ灵敏度、漏电流、γ/n分辨等物理参数进行了测量和分析,结果表明,这类探测器可满足低强度裂变n/γ混合场中脉冲γ强度测量的需要.     

透平叶栅三维粘性气动反问题的控制理论方法

将基于控制理论的形状优化设计方法应用于粘性可压流动条件下的透平叶栅三维气动反设计,详细推导了三维N-S方程伴随系统的偏微分方程组及其各类边界条件.讨论了伴随系统的解的适定性条件,并由此给出应用N-S方程进行气动优化的目标函数的选取限制.研究了伴随方程的数值求解技术,给出敏感性导数的最终计算式,结合拟牛顿算法发展了三维透平叶栅粘性反问题的气动设计方法.     

一种超混沌映射的单双参量自适应同步

利用参量自适应法实现了超混沌系统Kawakami映射的同步.通过严密的数学推导,给出了Kawakami映射在单参量自适应下实现同步的充分条件,并在双参量自适应控制下系统同样实现了同步.数值模拟结果显示,该映射输出具有类似于白噪声的宽谱特性,因此比较适合用于保密通信.     

Mesons in the Constituent Quark Model

The quark-antiquark （q^-q） spectrum is studied by solving the Schrōdinger equation in the framework of nonrelativistic constituent quark model. An overall good fit to the experimental data of meson is obtained. The interactions between quark and antiquark consist of quadratic colour confinement-exchange, one-gluon-exchange, and Goldstone-boson-exchange potentials.     

Ab Initio Comparative Study of Zincblende and Wurtzite ZnO

By employing the first-principles pseudopotential plane-wave method, the physical properties of zincblende ZnO are investigated in comparison with those of the common wurtzite structure. Zincblende ZnO is predicted to be a direct gap semiconductor. Compared to the wurtzite structure, the zincblende ZnO is characterized by smaller bandgap and pressure coefficient, larger electron effective mass, increasing static dielectric constants and more covalent bonding. Furthermore, the optical properties including dielectric function and energy loss function of zincblende ZnO were obtained and analysed with some features. These aspects reveal promising applications of zincblende ZnO in optoelectronic devices.     

Electrical Characterization of Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application

Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4 × 10^-9 A/cm^2 at 1.8V and 125℃, a breakdown electric field of 2.6 MV//cm as well as voltage coefficients of capacitance （VCCs） of 2110ppm/V^2 and -824 ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole-Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present, suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.     

CVD金刚石薄膜探测器性能研究

通过实验测量和理论分析, 从载流子动力学角度研究了用于脉冲辐射探测的CVD金刚石薄膜探测器的适用结构、电荷收集效率和时间响应性能. 结果表明, CVD金刚石薄膜可以制成均匀型结构的探测器; 薄膜中的缺陷会降低探测器的电荷收集效率, 探测器的电荷收集效率随场强增大而增大直至饱和. 已研制的CVD金刚石探测器电荷收集时间可达719ps, 在2.5V/μm场强下达到饱和, 电荷收集效率 达60.5%; 晶格散射是影响探测器时间响应的主要因素, 选用大晶粒甚至单晶金刚石薄膜可以提高探测器时间响应.     

新型菁类染料聚集体构筑和它的非线性光学特性研究

采用旋涂法制备了一种五甲川菁染料的超薄膜,利用原子力显微,椭偏仪、UV-Vis吸收光谱、红外光谱、小角X射线衍射等对薄膜的形貌和线性光谱性质进行了研究表征,结果表明染料在薄膜中形成了有序而稳定的J-聚集体,前向简并四波混频(DFWM)技术研究表明由于分子的聚集作用引起三阶非线性极化率的增大(χ(3)=2.55×10-12esu),利用激子耦合模型初步分析和讨论了产生非线性效应增强的内在机制。     

矩阵方程A^TXB＋B^TX^TA=D的极小范数最小二乘解的迭代解法

1 引言 设R^m×n表示m×n实矩阵的全体，A^T表示矩阵A的转置，R（A）和N（A）分别表示矩阵A的值域和零空间，A^＋表示矩阵A的Moore—Penrose广义逆，A×B表示矩阵A与B的Kronecker乘积，     

NP型螯合树脂对镧及伴生元素的吸附性能

通过NP树脂在不同pH时对La~(3+)、Y~(3+)、UO_2~(2+)、Zr~(4+)和Fe~(3+)等离子的吸附试验,表明NP树脂在较宽的pH范围内对La~(3+)和Y~(3+)离子有良好的吸附性,如选择适当pH,可达到与其它伴生元素分离的目的。NP树脂在pH=4时,对La~(3+)的交换容量为1mmol La~(3+)/g干树脂。然而吸附速度较慢为该树脂不足之处。