?4模型真空态间的转换算符

本工作在正则量子化的基础上，对$\phi^4$模型的哈密顿量采取正规序来正规化真空零点能，然后微扰计算了至次领头阶的真空态修正。同时首次得到可以在$\phi^4$模型的两个真空态之间转换的算符，我们相信这个算符也是适当极限条件下产生$\phi^4$扭结(kink)的算符的形式。最后简要说明了真空能的应用。     

Image charge effect on the light emission of rutile TiO_2(110) induced by a scanning tunneling microscope

The plasmon-enhanced light emission of rutile TiO_2(110) surface has been investigated by a low-temperature scanning tunneling microscope(STM). We found that the photon emission arises from the inelastic electron tunneling between the STM tip and the conduction band or defect states of TiO_2(110). In contrast to the Au(111) surface, the maximum photon energy as a function of the bias voltage clearly deviates from the linear scaling behavior, suggesting the non-negligible effect of the STM tip on the band structure of TiO_2. By performing differential conductance( dI/dV) measurements, it was revealed that such a deviation is not related to the tip-induced band bending, but is attributed to the image charge effect of the metal tip, which significantly shifts the band edges of the TiO_2(110) towards the Femi level(E_F) during the tunneling process. This work not only sheds new lights onto the understanding of plasmon-enhanced light emission of semiconductor surfaces, but also opens up a new avenue for engineering the plasmon-mediated interfacial charge transfer in molecular and semiconducting materials.     

磁场下有原子自旋轨道耦合的各向异性量子点的精确解析传播子

量子力学中很少有系统能够精确地计算传播子, 特别是在考虑了自旋轨道耦合效应的情况下. 利用相空间的群论方法, 首先导出了有原子自旋轨道耦合的各向异性量子点传播子的精确解析表达式. 随后利用传播子来计算自旋高斯波包的演化与相应的概率密度, 并研究了原子自旋轨道耦合效应和磁场强度对距离期望值的影响.     

Improved performance of Au nanocrystal nonvolatile memory by N_2-plasma treatment on HfO_2 blocking layer

The N_2-plasma treatment on a HfO_2 blocking layer of Au nanocrystal nonvolatile memory without any post annealing is investigated. The electrical characteristics of the MOS capacitor with structure of Al–Ta N/HfO_2/Si O2/p-Si are also characterized. After N_2-plasma treatment, the nitrogen atoms are incorporated into HfO_2 film and may passivate the oxygen vacancy states. The surface roughness of HfO_2 film can also be reduced. Those improvements of HfO_2 film lead to a smaller hysteresis and lower leakage current density of the MOS capacitor. The N_2-plasma is introduced into Au nanocrystal(NC) nonvolatile memory to treat the HfO_2 blocking layer. For the N_2-plasma treated device, it shows a better retention characteristic and is twice as large in the memory window than that for the no N_2-plasma treated device. It can be concluded that the N_2-plasma treatment method can be applied to future nonvolatile memory applications.     

说课:二次函数的应用

1 教材分析(说教材) 1.1本节课内容在中考复习中的地位和作用.武汉市2010年5月调考试卷第23题属于二次函数的应用范畴,其满分是10分,占中考数学试卷总分的1/12,其内容是中考必考内容,也是今后高中数学学习的基础.本课以此题为载体,对二次函数应用的内容进行复习.     

芳基碘鎓盐促进芳基化反应的应用

二芳基碘鎓盐属于有机高价碘化合物,具有无毒、反应条件温和以及良好的选择性等优点,在有机合成中具有重要地位,受到广大化学工作者的关注。近年来,利用二芳基碘鎓盐在金属催化下进行的芳基化反应为一些难以合成的杂环化合物的合成提供了简便、高效的方法;同时,二芳基碘鎓盐在无催化剂下进行的芳基化反应,为C—C偶联反应开辟了新的绿色合成路线。本文综述了近年来二芳基碘鎓盐在有机合成中促进芳基化反应的最新进展,着重介绍了利用二芳基碘鎓盐作为芳基化试剂与有机金属试剂、烯烃和炔烃类以及杂环化合物进行芳基化反应的研究;总结了二芳基碘鎓盐与杂环化合物反应中钯催化和铜催化下芳基化反应的机理,最后对二芳基碘鎓盐在今后有机合成中的应用作出了展望。     

明日叶黄酮类化合物清除羟基自由基活性研究

为了研究明日叶黄酮类化合物对羟基自由基的清除作用,以明日叶（主要取叶片）为原料,用体积分数为65％乙醇提取明日叶总黄酮,测定其总黄酮含量.通过Fenton反应体系产生羟基自由基,利用明日叶提取液中的功能成分黄酮类化合物对羟基自由基的清除作用进行研究.结果表明：明日叶提取物总黄酮质量分数为10.18％,且黄酮类化合物对羟基自由基有较强清除效力,当提取物总黄酮浓度在0.1～1.0 mg/mL范围内,其与清除率呈正相关.明日叶中黄酮类化合物对羟基自由基有较强清除效力,作为天然抗氧化产品开发具有一定价值.     

冷冻去脂-液液分配净化/气相色谱-质谱法测定化妆品中16种多环芳烃

建立了保湿护肤系列化妆品中16种多环芳烃的气相色谱-质谱测定法。对于水剂样品,采用环己烷提取、浓缩等简单前处理;对于膏霜剂样品,采用乙腈+丙酮(8+2,V/V)涡旋提取样品中的待测物,提取液经冷冻去脂、液液萃取净化(氨水-环己烷、水-环己烷),气相色谱-质谱法测定。16种多环芳烃在1～50μg/L均与对应峰面积呈良好线性关系。添加量在1～50μg/kg时,平均回收率(n=6)为78.1%～103.7%,相对标准偏差为2.4%～7.1%,方法检测限为1～10μg/kg。该法可用于化妆品中16种多环芳烃的测定。