用于检测油膜厚度的光纤传感器系统

非接触式光纤传感器因其抗干扰性强、灵敏度高、电绝缘性好等特点在某些场合占有不可替代的位置.本文介绍了一种用于检测大型涡轮机液压轴承运动状态及其周围油膜厚度分布情况的光纤传感器系统.详细讨论了传感器的结构及数据模型,并着重介绍了系统的几个重要组成部分,其中包括双光路、调制解调和并行数据采集等,最后给出了传感器的特性测试数据.     

关于Tuza和Voigt的(Dm,m)-可选择性刻画定理

给出一个不属于Non-D的图,但该图却不是(Dm,m)-可选择的.这表明在Tuza Zs和Voigt M的Non-D定义和(Dm,m)-可选择图的特征化定理中存在一定的冲突.针对如上冲突,对Tuza Zs和Voigh M所给出的Non-D的定义,以及(Dm,m)-可选择图的特征化定理的证明进行了修正.     

空间向量、夹角与距离

1．重、难点分析 引入向量研究几何是几何代数化的需要．它一方面能使我们了解一些近代数学知识．开拓视野；另一方面，为解决立体几何中某些用传统的纯几何方法解决时技巧性大、随机性强的问题提供一些通法，降低了解题难度．     

激光治疗PWS中制冷剂喷射冷却过程的数值模拟

本文采用有限容积法对制冷剂喷射冷却(Cryogen spray cooling,CSC)过程进行了数值分析,研究了皮肤组织温度场随时间、空间的分布规律,初步分析了喷射过程中可能发生的冷损伤.探讨了不同喷嘴距离对于喷射换热过程的影响.结果表明:本文的模拟结果定性符合文献中的试验结果;由于制冷剂喷射不均匀性带来的冷保护不足问题可以通过适当延长冷却时间(如大于80 ms)加以避免;低温制冷剂带来的冷损伤仅局限于浅表皮层,不会对人体造成伤害;喷射距离对于整个换热过程的影响非常有限,可以较为自由地布置喷嘴位置.     

阻尼材料在飞机炮振减振上的应用

在飞机炮舱区应用新型阻尼材料LJ5,组成一个全新的阻尼结构系统来吸收由航炮射击时产生的冲击能量,改善其炮击的振动环境.可使炮舱区的动应力下降约30%.     

拟贯穿剖分下多元样条空间基

本文给出了拟贯穿剖分△_qc下的平面区域D上的样条函数空间S_k^u(△_qc,D)的基底。     

Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well(MQW) solar cells are investigated. It is found that due to the reduction of piezoelectric polarization and the enhancement of tunneling transport of photo-generated carriers in MQWs, the external quantum efficiency(EQE) of the solar cells increases in a low energy spectral range(λ 370 nm) when the barrier thickness value decreases from 15 nm to 7.5 nm. But the EQE decreases abruptly when the barrier thickness value decreases down to 3.75 nm. The reasons for these experimental results are analyzed. We are aware that the reduction of depletion width in MQW region, caused by the high resistivity of the p-type GaN layer may be the main reason for the abnormally low EQE value at long wavelengths(λ 370 nm).     

Chemical mechanical planarization of Ge_2Sb_2Te_5 using IC1010 and Politex reg pads in acidic slurry

In the paper, chemical mechanical planarization(CMP) of Ge2Sb2Te5(GST) is investigated using IC1010 and Politex reg pads in acidic slurry. For the CMP with blank wafer, it is found that the removal rate(RR) of GST increases with the increase of pressure for both pads, but the RR of GST polished using IC1010 is far more than that of Politex reg. To check the surface defects, GST film is observed with an optical microscope(OM) and scanning electron microscope(SEM). For the CMP with Politex reg, many spots are observed on the surface of the blank wafer with OM, but no obvious spots are observed with SEM. With regard to the patterned wafer, a few stains are observed on the GST cell, but many residues are found on other area with OM. However, from SEM results, a few residues are observed on the GST cell, more dielectric loss is revealed about the trench structure. For the CMP with IC1010, the surface of the polished blank wafer suffers serious scratches found with both OM and SEM, which may result from a low hardness of GST, compared with those of IC1010 and abrasives. With regard to the patterned wafer, it can achieve a clean surface and almost no scratches are observed with OM, which may result from the high-hardness SiO2 film on the surface, not from the soft GST film across the whole wafer. From the SEM results, a clean interface and no residues are observed on the GST surface, and less dielectric loss is revealed. Compared with Politex reg, the patterned wafer can achieve a good performance after CMP using IC1010.