Frontispiece: Stainless Steel-Like Passivation Inspires Persistent Silicon Anodes for Lithium-Ion Batteries

Passivation of stainless steel by additives forming mass-transport blocking layers is widely practiced, where Cr element is added into bulk Fe−C forming the Cr₂O₃-rich protective layer. Here we extend the long-practiced passivation concept to Si anodes for lithium-ion batteries, incorporating the passivator of LiF/Li₂CO₃ into bulk Si. The passivation mechanism is studied by various ex situ characterizations, redox peak contour maps, thickness evolution tests, and finite element simulations. The results demonstrate that the passivation can enhance the (de)lithiation of Li-Si alloys, induce the formation of F-rich solid electrolyte interphase, stabilize the Si/LiF/Li₂CO₃ composite, and mitigate the volume change of Si anodes upon cycling. The 3D passivated Si anode can fully retain a high capacity of 3701 mAh g⁻¹ after 1500 cycles and tolerate high rates up to 50C. This work provides insight into how to construct durable Si anodes through effective passivation.     

Dual-Interface Engineering in Perovskite Solar Cells with 2D Carbides

Passivating the interfaces between the perovskite and charge transport layers is crucial for enhancing the power conversion efficiency (PCE) and stability in perovskite solar cells (PSCs). Here we report a dual-interface engineering approach to improving the performance of FA_0.85MA_0.15Pb(I_0.95Br_0.05)₃-based PSCs by incorporating Ti₃C₂Cl_x Nano-MXene and o-TB-GDY nanographdiyne (NanoGDY) into the electron transport layer (ETL)/perovskite and perovskite/ hole transport layer (HTL) interfaces, respectively. The dual-interface passivation simultaneously suppresses non-radiative recombination and promotes carrier extraction by forming the Pb−Cl chemical bond and strong coordination of π-electron conjugation with undercoordinated Pb defects. The resulting perovskite film has an ultralong carrier lifetime exceeding 10 μs and an enlarged crystal size exceeding 2.5 μm. A maximum PCE of 24.86 % is realized, with an open-circuit voltage of 1.20 V. Unencapsulated cells retain 92 % of their initial efficiency after 1464 hours in ambient air and 80 % after 1002 hours of thermal stability test at 85 °C.     

Understanding the Role of Fluorine Groups in Passivating Defects for Perovskite Solar Cells

Introducing fluorine (F) groups into a passivator plays an important role in enhancing the defect passivation effect for the perovskite film, which is usually attributed to the direct interaction of F and defect states. However, the interaction between electronegative F and electron-rich passivation groups in the same molecule, which may influence the passivation effect, is ignored. We herein report that such interactions can vary the electron cloud distribution around the passivation groups and thus changing their coordination with defect sites. By comparing two fluorinated molecules, heptafluorobutylamine (HFBM) and heptafluorobutyric acid (HFBA), we find that the F/−NH₂ interaction in HFBM is stronger than the F/−COOH one in HFBA, inducing weaker passivation ability of HFBM than HFBA. Accordingly, HFBA-based perovskite solar cells (PSCs) provide an efficiency of 24.70 % with excellent long-term stability. Moreover, the efficiency of a large-area perovskite module (14.0 cm²) based on HFBA reaches 21.13 %. Our work offers an insight into understanding an unaware role of the F group in impacting the passivation effect for the perovskite film.     

Solar cell fabrication using edge-defined film-fed growth (EFG) silicon wafers

The insufficient supply of polysilicon is limiting the growth of the segment of the photovoltaic industry using silicon materials. Because it is grown directly in the form of ribbon from a silicon melt, edge-defined film-fed growth (EFG) silicon ribbon is a promising alternative for cutting down wafer costs by reducing the polysilicon consumption and eliminating kerf loss. In this paper, we will discuss the various properties that can be achieved with for low cost and high-efficiency EFG silicon ribbon solar cell fabrication. Boron-doped p-type EFG ribbon silicon wafers with resistivities of 2-4 Ω cm and a size of 125 mm × 125 mm were used. The major fabrication steps we studied were mixed acid (HF, HNO₃, DI water) texturing, phosphorus diffusion with POCl₃, thermal oxide growth for surface passivation, laser process for edge isolation, and PECVD of SiN_x:H for surface passivation and antireflection coating. By optimizing the processing steps, we achieved a conversion efficiency, open circuit voltage, short circuit current, and fill factor as high as 14.5%, 584 mV, 32.1 mA/cm², and 77%, respectively.     

XPS study of the surface chemistry on AZ31 and AZ91 magnesium alloys in dilute NaCl solution

The surface chemistry on AZ31 and AZ91 magnesium alloys was characterized by X-ray photoelectron spectroscopy (XPS) in the corrosion and the passivation zones. In the corrosion zone, the presence of Mg(OH)₂ and MgCO₃ species was found in the outer surface, whereas, in the inner layer, the co-existence of Mg(OH)₂, MgO and MgCO₃ species was observed for both alloys. The presence of Al³⁺ in the surface electrolyte to form Al₂O₃/Al(OH)₃ and the formation of carbonate product provide a better passivation on the surfaces and retard the chloride-induced corrosion on the materials in the passivation zone.     

水性丙烯酸聚氨酯涂料中反应性缓蚀剂掺入及其耐蚀性能

利用磷酸和双酚A环氧树脂反应得到功能性缓蚀剂羟基环氧磷酸酯(HEP). 将其添加到水性羟基丙烯酸树脂中,再与水性异氰酸酯固化剂交联,制备了水性羟基环氧磷酸酯/丙烯酸聚氨酯复合涂层(HEP-APU). 由于磷酸酯基团可以与金属基体发生反应,在金属表面形成一层磷化膜,极大的提升了金属的抗闪蚀能力. 利用电化学阻抗谱和极化曲线研究HEP-APU复合涂层对Q235碳钢在3.5wt% NaCl溶液中耐蚀性能. 结果表明,HEP-APU涂料对Q235碳钢具有优越的钝化和耐腐性能,且当HEP在水性丙烯酸聚氨酯涂料中质量分数为0.5%时,所得到的复合涂层的防腐性能最佳.     

合金元素Nd对Pb-Ag阳极在H2SO4溶液中电化学行为的影响

采用循环伏安、线性扫描、电化学阻抗和环境扫描电镜对比研究了Pb-Ag和Pb-Ag-Nd阳极的阳极膜和析氧反应. 结果表明,合金元素Nd促进了Pb/PbO_n/PbSO₄ (1≤n<2)膜层的生长. 在高极化电位区间(高于1.20V (vs Hg/Hg₂SO₄/饱和K₂SO₄溶液)),Nd有利于低价铅的化合物(PbO_n,PbSO₄)向α-PbO₂和β-PbO₂转变. 此外,环境扫描电镜形貌和线性扫描分析证明Pb-Ag-Nd表面生成的阳极膜较Pb-Ag的阳极膜更厚且更致密. 因此,Pb-Ag-Nd阳极表面的阳极膜可以给合金基底提供更好的保护. 另一方面,电化学阻抗测试揭示了两种阳极的析氧反应均受中间产物的形成和吸附控制. Nd可以降低阳极膜/电解液界面处中间产物的吸附阻抗且增加中间产物的覆盖率,从而提高析氧反应活性. 综上所述,合金元素Nd可提高Pb-Ag阳极的耐腐蚀性,降低阳极电位进而起到节能降耗的作用.     

不同形貌的金字塔结构对硅片表面钝化和异质结太阳电池的影响

在晶体硅表面沉积本征非晶硅层的异质结(SHJ)太阳电池以其高效率、高稳定性、低成本和低温制备等诸多优势被人们广泛关注.在晶体硅衬底表面制绒,是提高太阳电池效率的有效途径之一.本文采用四甲基氢氧化铵(TMAH)在硅片表面制备了不同形貌的金字塔结构的硅异质结电池衬底,并应用到电池中.通过研究不同金字塔的形貌,光学特性以及电学特性,找出提高硅片钝化效果,改善异质结电池的性能的优化的金字塔结构.结果表明:2%(w)TMAH,10%(w)异丙醇(IPA)可以在硅片表面制得标准四面体金字塔结构.和其它两种金字塔结构相比较,标准四面体金字塔结构绒面衬底反射率最低,可以提高太阳电池的短路电流密度(Jsc).同时,这种结构金字塔形貌可以提高钝化效果,改善电池各项性能参数.     

Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer

Using the photoluminescence surface state spectroscopy (PLS³) technique, attempts were made to determine the surface state density (N_ss) distribution on Al_xGa_1−xAs (x≈0.3) surfaces passivated by the Si interface control layer (ICL) technique. Air-exposed AlGaAs epitaxial wafers which are technologically important for fabrication of various devices were passivated ex situ by forming a SiO₂/Si₃N₄/Si ICL/AlGaAs structure after the HCl treatment and their photoluminescence behavior was investigated in detail. The result of the PLS³ analysis indicated that Si ICL-based passivation reduces the minimum interface state density value down to 10¹⁰ cm⁻² eV⁻¹ range. Some indication was also obtained that further improvements are possible by using electron cyclotron resonance (ECR)-enhanced N₂ plasma for Si₃N₄/Si ICL interface formation.     

Gated photoluminescence study of oxide-free InP MIS structure having an ultrathin silicon interface control layer

In order to investigate the effectiveness of a novel oxide-free surface passivation approach for InP, using an ultrathin silicon interface control layer (Si ICL), gated photoluminescence characteristics of the Si₃N₄/Si ICL/n-InP metal–semiconductor–insulator (MIS) structure were studied at room temperature. As compared with gated PL spectra of Si₃N₄/n-InP MIS without Si ICL, PL intensities of the sample with Si ICL were much more strongly modulated by the gate voltage. The interface state density distribution was estimated by an optical analog of the Terman’s C–V analysis and a good agreement with the C–V analysis was obtained. The result indicates complete removal of Fermi level pinning over the entire bandgap in the novel oxide-free MIS structure.