Evaluation of Charged Defect Energy in Two-Dimensional Semiconductors for Nanoelectronics: The WLZ Extrapolation Method

Defects play a central role in controlling the electronic properties of two-dimensional (2D) materials and realizing the industrialization of 2D electronics. However, the evaluation of charged defects in 2D materials within first-principles calculation is very challenging and has triggered a recent development of the WLZ (Wang, Li, Zhang) extrapolation method. This method lays the foundation of the theoretical evaluation of energies of charged defects in 2D materials within the first-principles framework. Herein, the vital role of defects for advancing 2D electronics is discussed, followed by an introduction of the fundamentals of the WLZ extrapolation method. The ionization energies (IEs) obtained by this method for defects in various 2D semiconductors are then reviewed and summarized. Finally, the unique defect physics in 2D dimensions including the dielectric environment effects, defect ionization process, and carrier transport mechanism captured with the WLZ extrapolation method are presented. As an efficient and reasonable evaluation of charged defects in 2D materials for nanoelectronics and other emerging applications, this work can be of benefit to the community.     

Recent Advances in Spatial Self-Phase Modulation with 2D Materials and its Applications

In recent years, spatial self-phase modulation (SSPM) with two-dimensional (2D) materials has attracted the attention of many researchers as an emerging and ubiquitous nonlinear optical effect. In this review, the state of the art of 2D material-based SSPM is summarized. SSPM measures or tunes the nonlinearity of 2D materials, and it is also an effective approach to study the band structure of 2D materials. Several modified forms of SSPM, such as high-order, white-light-excited, vector field excited, and optically nonlinearly enhanced SSPM are also presented. Subsequently, the physical origin of the SSPM formation mechanism is compared and analyzed. Furthermore, the applications of SSPM with 2D materials, including passive photonic devices, generation of Bessel beams, and identifying the mode of the orbital angular momentum, are listed. Finally, several urgent problems of the SSPM with 2D materials, potential applications, and prospects for future development are presented.     

纳米线组装叶片状三氧化钼的合成及其对三乙胺的气敏性能

通过溶剂热法制备了由一维纳米线自组装的叶状三氧化钼纳米材料，借助X射线衍射（XRD）、场发射扫描电子显微镜（FESEM）、透射电子显微镜（TEM）、高分辨透射电镜（HRTEM）、紫外-可见漫反射光谱（UV-Vis DRS）、热重-示差扫描量热（TG-DSC）、氮气吸附（N₂-sorption）等技术对材料进行了系统的组成和结构表征。结果表明，一维纳米线表面具有粗糙结构，且由一维纳米线组装的叶片状三氧化钼属畸变八面体中的正交晶系，其主要暴露的结晶面是（021）。此叶片状三氧化钼气敏材料在300℃的最佳工作温度下，对2.25 g·m^-3的三乙胺表现出优异的选择性、超高的灵敏度和较快的响应时间（5 s），甚至在浓度为4.5 mg·m^-3的检测标准下响应值仍可达到12.4。基于以上结构表征和性能测试结果，对叶片状三氧化钼的形成及三乙胺敏感机理进行了初步探讨分析。     

Mn2+、N2-共掺杂Zn2GeO4晶体电子结构和光学性质的研究

采用基于密度泛函理论的平面波超软赝势方法对本征Zn2GeO4，Mn2+掺杂Zn2GeO4，Mn2+/N2-共掺杂Zn2GeO4超晶胞进行了几何结构优化，计算了掺杂前后体系的晶格常数、能带结构、态密度和光学性质。结果表明，Mn离子掺入后，Mn离子3d轨道与O离子2p轨道之间有强烈的轨道杂化效应，掺杂系统不稳定，而Mn/N离子共掺后，Mn离子和N离子之间的吸引作用克服了Mn离子之间的排斥作用，能够明显地提高掺杂浓度和体系的稳定性。光学性质计算结果表明，Mn离子与N离子共掺杂能改善Zn2GeO4电子在低能区的光学跃迁特性，增强电子在可见光区的光学跃迁；吸收谱计算结果显示，Mn离子与N离子掺入后体系对低频电磁波吸收增加。     

Synthesis,crystal structure and conformational analysis of an unexpected [1,5]dithiocine product of aminopyridine and thiovanillin

The condensation reaction of 2‐mercapto‐3‐methoxybenzaldehyde with 3‐aminopyridine afforded an unexpected N‐alkylated [1,5]dithiocine instead of the N‐salicylideneaniline. The proposed mechanism for this condensation involves a strong intramolecular hydrogen bond between the thiol and the amine groups, leading to a second condensation. The corresponding product, i.e. 4,10‐dimethoxy‐13‐(pyridin‐3‐yl)‐6H,12H‐6,12‐epiminodibenzo[b,f][1,5]dithiocine methanol 0.463‐solvate, C₂₁H₁₈N₂O₂S₂·0.463CH₃OH, was characterized by single‐crystal X‐ray diffraction analysis. The supramolecular structure shows π–π stacking and S…S interactions in the crystal packing. Within the asymmetric unit, two geometries of the N atom are observed. Although a planar geometry should be expected, a pyramidal one is observed due to the crystal packing. The presence of the two geometries was further supported by density functional theory (DFT) calculations that show an electronic energy difference of less than 2 kJ mol^?1 between the two conformers.     

Interfacial Synthesis of a Monolayered Fluorescent Two-Dimensional Polymer through Dynamic Imine Chemistry

A fluorescent monolayered two-dimensional polymer (2DP) containing both tetraphenylethylene (TPE) and imine linkages is synthesized at air-water interface using the Langmuir-Blodgett method. We designed TPE-based monomers with long distances between the TPE and the imine linkages to avoid the charge transfer and therefore keep the fluorescence. A monolayered 2DP provided with more than 104 μm² in domain size and around 0.8 nm thickness was obtained through a successive Schiff base reaction at air-water interface. The nanostructures and fluorescent property of 2DP films were characterized by optical microscopy, SEM, TEM, AFM and fluorescence spectrum. Most importantly, the tip-enhanced Raman spectroscopy (TERS) was utilized here to confirm the success of the polycondensation of monolayered 2DP.     

On a question of Thas on partial 3‐(qn + 1, q + 1, 1) designs

In this note, we answer a question of JA Thas about partial $3$‐ $\left(q^n+1,q+1,1\right)$ designs. We then extend this answer to a result about the embedding of certain partial $3$‐ $\left(q^2+1,q+1,1\right)$ designs into Möbius planes.     

A note on 3‐partite graphs without 4‐cycles

Let $C_4$ be a cycle of order 4. Write $ex\left(n,n,n,C_4\right)$ for the maximum number of edges in a balanced 3‐partite graph whose vertex set consists of three parts, each has $n$ vertices that have no subgraph isomorphic to $C_4$. In this paper, we show that $ex\left(n,n,n,C_4\right)\ge \frac{3}{2}n\left(p+1\right)$, where $n=\frac{p\left(p?1\right)}{2}$ and $p$ is a prime number. Note that $ex\left(n,n,n,C_4\right)\le \left(\frac{3\sqrt{2}}{2}+o\left(1\right)\right)n^{\frac{3}{2}}$ from Tait and Timmons's works. Since for every integer $m$, one can find a prime $p$ such that $m\le p\le \left(1+o\left(1\right)\right)m$, we obtain that $\underset{n\to \infty }{\lim }\frac{ex\left(n,n,n,C_4\right)}{\frac{3\sqrt{2}}{2}{n}^{\frac{3}{2}}}=1$.     

An Approach to Paracyclophane-Based Tetrathiafulvalenes: Synthesis and Characterization of a Pseudo-Geminal [2.2]Paracyclophane 1,3-Dithia-2-Thione

The synthesis of paracyclophane-based tetrathiafulvalene precursors is described in the context of the importance of these compounds in the field of material chemistry. Pseudo-geminal bis(1,3-dithia-2-thione) was synthesized via the corresponding 1,3-dithiol-2-ylium salt. The latter was obtained by a synthetic procedure that involves 4,15-bis(acetyl)[2.2]paracyclophane, a new compound of interest for many researchers.