Strip silicon waveguide for code synchronization in all-optical analog-to-digital conversion based on a lumped time-delay compensation scheme

An all-optical analog-to-digital converter(ADC) based on the nonlinear effect in a silicon waveguide is a promising candidate for overcoming the limitation of electronic devices and is suitable for photonic integration. In this paper, a lumped time-delay compensation scheme with 2-bit quantization resolution is proposed. A strip silicon waveguide is designed and used to compensate for the entire time-delays of the optical pulses after a soliton self-frequency shift(SSFS) module within a wavelength range of 1550 nm–1580 nm. A dispersion coefficient as high as-19800 ps/(km·nm) with ±0.5 ps/(km·nm)variation is predicted for the strip waveguide. The simulation results show that the maximum supportable sampling rate(MSSR) is 50.45 GSa/s with full width at half maximum(FWHM) variation less than 2.52 ps, along with the 2-bit effectivenumber-of-bit and Gray code output.     

Planar waveguides in neodymium-doped calcium niobium gallium garnet crystals produced by proton implantation

In this work, the fabrication and optical properties of a planar waveguide in a neodymium-doped calcium niobium gallium garnet(Nd:CNGG) crystal are reported. The waveguide is produced by proton(H~+) implantation at 480 ke V and a fluence of 1.0×10~(17) ions/cm~2. The prism-coupling measurement is performed to obtain the dark mode of the waveguide at a wavelength of 632.8nm. The reflectivity calculation method(RCM) is used to reconstruct the refractive index profile. The finite-difference beam propagation method(FD-BPM) is employed to calculate the guided mode profile of the waveguide.The stopping and range of ions in matter 2010(SRIM 2010) code is used to simulate the damage profile induced by the ion implantation. The experimental and theoretical results indicate that the waveguide can confine the light propagation.     

涂覆双层石墨烯的介质纳米线表面等离子体光波导的模式特性研究

设计了一种由涂覆双层石墨烯的圆形介质纳米线组成的表面等离子体光波导。利用有限元法(FEM),数值分析了纳米线半径、介质夹层厚度、石墨烯化学势以及工作频率对波导所支持的电磁场模式的有效折射率、传播长度、归一化模式面积以及品质因数等模式特性的影响。结果表明,这种新型的混合表面等离子体光波导具有很强的模式束缚能力,归一化模式面积非常小,可以实现极高密度的器件集成,并且传输损耗较低。     

一种半环形表面等离子体光波导滤波器的传输特性研究

本文设计并提出一种基于金属-介质-金属结构的带有半环形共振腔的表面等离子体光波导滤波器,利用数值模拟的方法研究了其传输特性。结果表明,在该结构传输谱曲线中形成的滤波阻带位置可以通过改变半环形共振腔的半径来调整。另外由于结构固有的特性,在传输谱曲线上还可以观察到类似等离子体感应透明的传输特性,而且这一特性可以通过改变半环形共振腔与直波导之间的耦合间距和采用面对面放置的双半环结构进行调节。本文所设计的结构可以动态控制光的传输,并可以应用于紧凑型纳米光学器件集成领域。     

键合型掺铒纳米晶-聚合物波导放大器的制备

为了克服主客掺杂型有源材料均匀性和稳定性差的问题,采用键合掺杂方法,将高温热解法制备的油酸修饰掺铒氟钇钠纳米晶粒与甲基丙烯酸甲酯发生共聚反应,形成键合型有源芯层材料。纳米晶粒均匀固定在聚合物分子链上,抑制了高浓度掺杂时的团聚析出且材料更稳定。纳米粒子在聚合物中的质量百分比达到约1wt%,具有良好的成膜性,用原子力显微镜照片观察薄膜表面粗糙度为1.76 nm。用椭偏仪测量薄膜光学性质,并用柯西色散模型拟合出薄膜折射率随波长的变化关系,材料在1550 nm信号光波长的折射率为1.485。设计嵌入式波导结构,采用有限元方法进行模式分析和计算光场强度分布。采用紫外光刻和感应耦合等离子体刻蚀工艺制备凹槽形下包层,填充有源材料制备条形波导放大器。实验结果表明,当1550 nm信号光功率为0.1mW,1480 nm泵浦光功率为390 mW时,在1.2 cm长的样品中得到了3.58 d B的信号光相对增益。     

基于平板波导的小型红外光栅光谱仪光学设计

为实现红外光谱仪器的小型化,通过分析现有小型光谱仪,提出了一种基于平板波导的小型红外光栅光谱仪的设计方法。平板波导光谱仪的小型化原理与一般的微小型光谱仪不同。在平板波导光谱仪中,光束被限制在一层薄薄的平板波导介质中传播,看起来像是整个光学系统被压扁了。在垂直于平板波导的方向上光学元件的尺寸可以做到很小,从而显著减小光学系统的尺寸。该系统的设计可分为Czerny-Turner结构设计、波导结构设计。先根据像差理论设计Czerny-Turner结构,目标是保证光谱分辨率及校正像差;然后根据几何光学理论设计波导结构,包括平板波导和两个柱面透镜,目标是压缩光束并校正像散;最后将它们输入Zemax软件中进行综合优化,以获得最优的光学系统。据此方法设计了一个平板波导红外光栅光谱仪,工作波段为8~12 μm,数值孔径为0.22,采用线阵探测器。通过Zemax软件对结果进行分析和评价,表明仪器光学系统的尺寸为130 mm×125 mm×20 mm,工作波段内光谱分辨率达到80 nm,满足设计指标要求。证明了该优化设计方法是可行的,所得系统尺寸小、性能高。     

基于光谱解调的对称波导型表面等离子体共振传感研究

表面等离子体共振(SPR)传感系统有角度谱、光谱、强度、相位等解调方式,其中光谱型的(SPR)传感系统因可以使用光纤导光,将传感部分独立出来,可进行远距离传感和现场检测,并能有效缩小系统的体积。对称光波导型(SOW)SPR因金属膜层两边的折射率完全相同,表面等离子体波传播距离更长,穿透深度更深,比传统的SPR系统具有更高的灵敏度和分辨率。对对称波导型(SOW)SPR进行光谱解调研究,以MgF₂-Au-MgF₂结构的SOW-SPR为传感单元,同时以光纤输出的卤素灯为光源, 搭建了一套光谱解调的SOW-SPR检测系统,以不同浓度的葡萄糖溶液对系统折射率分辨率进行测量,得到2.8×10-7 RIU的分辨率。为SOW-SPR系统小型化、现场检测以及远距离探测提出一种可能实现的手段,具有很好的应用前景。     

新型结构超宽带LiNbO3电光调制器的优化设计

采用有限元软件对新型结构的铌酸锂电光调制器进行了优化设计.分析表明,采用脊波导和T型电极相结合的方式,能在保持高的特征阻抗的同时有效的实现相速匹配和有效降低电极损耗,从而较好的提高器件性能,是一种比较有潜力的调制器.利用优化结果,给出一种带宽达153 GHz,半波电压为8.55 V,特征阻抗为44 Ω的调制器的设计例子.     

Nanoscale C‐Rich SixC1−x Bus/Ring Waveguide Based Cross‐Wavelength Data Converter

The carbon‐rich silicon carbide (C‐rich Si_xC_1?x) micro‐ring channel waveguide with asymmetric core aspect is demonstrated for all‐optical cross‐wavelength pulsed return‐to‐zero on‐off keying (PRZ‐OOK) data conversion. Enhanced nonlinear optical Kerr switching enables 12‐Gbit per second data processing with optimized modulation depth. The inverse tapered waveguide at end‐face further enlarges the edge‐coupling efficiency, and the asymmetric channel waveguide distinguishes the polarization modes. To prevent data shape distortion, the bus/ring gap spacing is adjusted to control the quality factor (Q‐factor) of the micro‐ring. Designing the waveguide cross section at 500 × 350 nm² provides the C‐rich Si_xC_1?x channel waveguide to induce strong transverse electric mode (TE‐mode) confinement with a large Kerr nonlinearity of 2.44 × 10^?12 cm² W^?1. Owing to the trade‐off between the Q‐factor and the on/off extinction ratio, the optimized bus/ring gap spacing of 1400 nm is selected to provide a coupling ratio at 5–6% for compromising the modulation depth and the switching throughput. Such a C‐rich Si_xC_1?x micro‐ring with asymmetric channel waveguide greatly enhances the cross‐wavelength data conversion efficiency to favor its on‐chip all‐optical data processing applications for future optoelectronic interconnect circuits.