The Influence of the Electrodeposition Conditions on the Electroanalytical Performance of the Bismuth Film Electrode for Lead Determination

The bismuth film is a great promise as a suitable material to replace the mercury electrodes due to its low toxicity and good cathodic potential range. This work studies the influence of the electrodeposition conditions in the morphology and electroanalytical performance of the bismuth film electrodeposited onto copper electrode. The bismuth films were obtained in nitric or hydrochloric acid solutions with and without the presence of sodium citrate. The films were characterized by field emission scanning electron microscopy (FE‐SEM) and scanning electron microscopy with energy dispersive X‐ray spectrometry (SEM‐EDX). The microscopic analysis of the bismuth film obtained in HCl solution with sodium citrate (BIFE‐Cit) showed more homogeneous structure with higher content of bismuth than the film obtained in HCl only (BiFE‐HCl). The BiFE‐Cit exhibited a better analytical performance for lead with good adherence to the copper substrate.     

Hydrogen peroxide biosensor based on electrodeposition of zinc oxide nanoflowers onto carbon nanotubes film electrode

A new amperometric biosensor for hydrogen peroxide was developed based on adsorption of horseradish peroxidase at the glassy carbon electrode modified with zinc oxide nanoflowers produced by electrodeposition onto multi-walled carbon nanotubes （MWNTs） film. The morphology of the MWNTs/nano-ZnO electrode has been investigated by scanning electron microscopy （SEM）, and the electrochemical performance of the electrode has also been studied by amperometric method. The resulting electrode offered an excellent detection for hydrogen peroxide at -0.11 V with a linear response range of 9.9×10^-7 to 2.9×10^-3 mol/L with a correlation coefficient of 0.991, and response time 〈5 s. The biosensor displays rapid response and expanded linear response range, and excellent stability.     

离子液体AlCl3/Et3NHCl中电沉积法制备金属铝

在AlCl3/Et3NHCl型离子液体中铝电极上通过恒电位电解沉积制备出金属铝. 测定了不同摩尔比的AlCl3/Et3NHCl离子液体在不同温度下的电导率, 考察了离子液体AlCl3/Et3NHCl摩尔比为2/1中Al电极上铝沉积的晶核成核过程, 以及恒电位电解沉积铝的工艺条件对电流效率和沉积铝表面形貌的影响. 结果表明, 不同比例AlCl3/Et3NHCl离子液体的电导率随温度升高而升高, 符合Arrhenius规律; 在Al电极上铝沉积的成核机理为三维瞬时成核过程; 恒电位电解沉积结果表明, 室温下在电位-2.4 V(vs Pt)和电解时间20 min条件下, 沉积铝的表面形貌比较平整致密,电流效率达73%, 沉积铝的纯度达96%(w).     

离子液体中钴的电沉积行为

在含有氯化钴的室温离子液体氯化1-甲基-3-乙基咪唑(EMIC)和乙二醇(EG)体系中研究了金属钴的电沉积. 循环伏安法测试表明, 在EMIC-CoCl2熔盐中, 乙二醇的加入促进了EMIC的解离, 从而使氧化还原电流增大, 在EMIC-CoCl2-EG体系中钴的电沉积是受扩散控制的非可逆电极过程, 在该电解液体系中, Co(II)在Pt电极上的传递系数α为0.30, 扩散系数D0为4.16×10^-6 cm·s^-1; 计时电流法研究表明, 钴在铂电极上的电结晶过程符合三维连续成核的生长机理; 场发射扫描电子显微镜(FE-SEM)观察镀层的微观形貌显示, 金属钴的结晶细小. XRD分析证实, 镀层为纯钴, 沉积的钴是晶态和微晶态的混合物, 并且晶粒尺寸为纳米级.     

Epitaxial Growth and Thermoelectric Measurement of Bi2Te3/Sb Superlattice Nanowires

Superlattice nanowires are expected to show further enhanced thermoelectric performance compared with conventional nanowires or superlattice thin films. We report the epitaxial growth of high density Bi₂Te₃/Sb superlattice nanowire arrays with a very small bilayer thickness by pulse electrodeposition. Transmission electron microscopy, selected area electron diffraction and high resolution transmission electron microscopy were used to characterize the superlattice nanowires, and Harman technique was employed to measure the figure of merit (ZT) of the superlattice nanowire array in high vacuum condition. The superlattice nanowire arrays exhibit a ZT of 0.15 at 330 K, and a temperature difference of about 6.6 K can be realized across the nanowire arrays.     

Bi2Te3/Sb超晶格纳米线的外延生长和热电测量

通过脉冲电沉积,外延生长出小单元长度的Bi₂Te₃/Sb超晶格纳米线.借助哈曼方法,测量了超晶格纳米线阵列的热电性能,330 K时的ZT值可达0.15.研究了Bi₂Te₃/Sb超晶格纳米线阵列器件的制冷或者加热能力,发现器件的上下表面的最大温差可以达到6.6 K.     

悬浮粒子对电沉积Zn粉缓蚀性能的影响

在ＺｎＣｌ２镀槽中悬浮一定量的不溶性粒子，如石墨ＰｂＣ２，ＳｎＯ２，ＴｉＯ２，ＳｉＯ２等，电沉积制备Ｚｎ粉，并对其结构，形貌及腐蚀行为进行分析，ＳＥＭ的结果表明使用悬浮法可阻止Ｚｎ枝晶生长，悬浮ＰｂＯ２，ＳｎＯ２，ＴｉＯ２，ＳｉＯ２或Ｉｎ２Ｏ３等能明显地提高Ｚｎ粉在５ｍｏｌ／ＬＫＯＨ溶液中的缓蚀能力此外，文中还应用于分形理论对结果作了进一步讨论。     

Studies on photoinduced effects in pulse-electrodeposited Ag/Hg-1212/CdSe hetero-nanostructures

Metal/superconductor/semiconductor (Ag/Hg-1212/CdSe) hetero-nanostructures have been fabricated using pulse-electrodeposition technique and are characterized by X-ray diffraction (XRD), full-width at half-maximum (FWHM) and scanning electron microscopy (SEM) studies. The junction capacitance of Ag/Hg-1212, Hg-1212/CdSe and Ag/Hg-1212/CdSe heterojunctions is measured in dark and under laser irradiation at room temperature. The nature of the junction formed and built-in-junction potentials were determined. The increase in carrier concentration across the junction due to photo-irradiation has been observed.     

Increase in rate of electrodeposition and in Ni(II) concentration in the bath as a way to control grain size of amorphous/nanocrystalline Ni-W alloys

Calculations based on the equilibria involved have been carried out to find the conditions of the highest possible solubility of Ni(II) in an ammonia-citrate bath for the electrodeposition of amorphous/nanocrystalline Ni-W alloys. The appropriate increase in the concentration of citrate, followed by the corresponding increase in the concentration of Ni(II), has led, under the conditions of constant current, to the increase in the efficiency of the electrodeposition and therefore the rate of electrodeposition by 3.2 times. The amorphous alloys obtained in solutions of different Ni(II) concentrations had different sizes of nanocrystals (15–100 ?), as determined from X-ray diffractograms, and different alloy compositions (10–19.5 at% of W), but were of similar high hardness. Electronic Publication     

Effect of laser irradiation of C-V characteristics of electrodeposited Ag/Tl-2223/CdSe hetero-nanostructures

One of the innovative technological directions for the high-temperature superconductors has been persued by fabricating the heteroepitaxial multilayer structures such as superconductor-semiconductor heterostructures. In the present investigation, metal/superconductor/semiconductor (Ag/Tl-2223/CdSe) hetero-nanostructures have successfully been fabricated using dc electrodeposition technique and were characterized by X-ray diffraction (XRD), full-width at half-maximum (FWHM) and scanning electron microscopy (SEM) studies. The measurement of junction capacitance as a function of biasing voltage was used for the estimation of junction built-in-potential (V _D) and to study the charge distribution in a heterojunction. The Mott-Schottky plots were measured for each junction in dark and under the photo-irradiation. The effect of laser irradiation on C-V characteristics of hetero-nanostructure has been studied.