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51.
如图,棱长为a的正方体ABCD-A1B1C1D1中,6条面对角线构成棱长为2a的正四面体A1BC1D,连结相邻面的中心构成棱长为a 相似文献
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We have observed strong scattering of a probe light by dilute Bose-Einstein condensate (BEC) ^87Rb gas in a tight magnetic trap. The scattering light forms fringes at the image plane. It is found that we can infer the real size of the condensation and the number of the atoms by modelling the imaging system. We present a quantitative calculation of light scattering by the condensed atoms. The calculation shows that the experimental results agree well with the prediction of the generalized diffraction theory, and thus we can directly observe the phase transition of BEC in a tight trap. 相似文献
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Stochastic resonance usually appears when stimulus is too weak to overcome barriers in a nonlinear system. Unusually, we demonstrate that in a simple competitor as a prototype model, stochastic resonance can still occur when the stimulus is predominantly suprathreshold. This result provides new knowledge for understanding of mechanism underlying information process in biological systems and aIso finds appfications in signal processing. 相似文献
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A modified Woods-Saxon (MWS) potential is proposed for describing nucleus-nucleus interaction based on the Skyrme energy-density functional approach. Fusion barriers for a large number of fusion reactions from light to heavy systems can be described well with this potential. The suitable incident energies for fusion reactions leading to superheavy nuclei are also explored. It seems to us that the MWS potential is useful for selecting the suitable incident energies for fusion reactions for producing super-heavy nuclei. 相似文献
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Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates 下载免费PDF全文
GaAs (001) substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of lnAs quantum dots (QDs). InAs dots are grown on the stripe-patterned substrates by solid source molecular beam epitaxy. A thick buffer layer is deposited on the strip pattern before the deposition of InAs. To enhance the surface diffusion length of the In atoms, InAs is deposited with low growth rate and low As pressure. The AFM images show that distinct one-dimensionally ordered InAs QDs with homogeneous size distribution are created, and the QDs preferentiMly nucleate along the trench. With the increasing amount of deposited InAs and the spacing of the trenches, a number of QDs are formed beside the trenches. The distribution of additional QDs is long-range ordered, always along the trenchs rather than across the spacing regions. 相似文献
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