邻二氯苯激发态动力学

利用飞秒分辨的激光泵浦-探测技术结合飞行时间质谱和光电子速度成像方法研究了邻二氯苯第一电子单重激发态(S₁)的超快动力学.邻二氯苯的S₁态振动基态寿命为(651 ± 10) ps,对应于S₁振动基态向三重态的系间窜越过程.邻二氯苯S₁的高振动激发9a₂18a₂对应两个衰减通道,其中寿命为(458 ± 12) fs的超快过程对应于由处于振动激发的S₁向高振动激发的基态(S₀)发生的内转换过程,而寿命为(90 ± 10) ps过程则对应由S₁态向三重态(T₁)的系间窜越过程,电离产生的光电子能谱中长寿命的谱峰可能与系间窜越过程有关. S₁态高振动态的旋轨耦合程度比低振动态的更强,导致系间窜越过程更快.     

Ni在ZrO2(111)薄膜表面的生长、电子结构及热稳定性

利用X射线光电子能谱、紫外光电子能谱和低能电子衍射研究了Ni纳米颗粒在ZrO₂(111)薄膜表面的生长模式、电子结构及热稳定性. ZrO₂(111)薄膜外延生长于Pt(111)单晶表面,厚度约为3 nm.结果表明,当Ni气相沉积到ZrO₂(111)薄膜表面上时,遵循Stranski-Krastanov生长模式,即先二维生长至0.5 ML(monolayer),然后呈三维岛状生长.随着覆盖度的减小, Ni 2p_3/2峰逐渐向高结合能位移.利用俄歇参数法分析发现,引起该峰向高结合能位移的主要原因来源于终态效应的贡献,但在低的Ni覆盖度时,也有部分初态效应的贡献,说明Ni在ZrO₂表面初始生长时,两者存在较强的界面相互作用, Ni向ZrO₂衬底传递电荷,形成带部分正电荷的Ni_δ+.两种不同覆盖度(0.05和0.5 ML)的Ni/ZrO₂(111)模型催化剂热稳定性研究表明,当温度升高时, Ni逐渐被氧化成Ni₂₊,并伴随着向ZrO₂衬底的扩散.本文从原子水平上认识了Ni与ZrO₂表面的相互作用和界面结构,为理解实际ZrO₂担载的Ni催化剂结构提供了重要的依据.     

Corrosion of Nickel-based Alloy G30 in the Stratum Water Containing H2S/CO2

The influences of temperature and CO2 pressure on the corrosion of nickel-based alloy G30 in the stratum water containing H2S/CO2 were investigated with the aid Mott-Schottky analysis and scanning electron microscopy（SEM） of electrochemical impedance spectroscopy（EIS）, The results indicate that alloy G30 is in the passive state in the stratum water, which is related to the formation of the passive film on its surface. This passive film can significantly protect the substrate from further corrosion. And the film protection is enhanced with decreasing temperature and CO2 pressure. Auger electron spectrometry（AES） and X-ray photoelectron spectrometry（XPS） results reveal that the passive film shows the double-layer structure, i.e. the inner chromium oxide and the outer iron/nickel spinel oxides or hydroxides with Mo oxides dispersing throughout the inner and outer scale.     

X荧光能谱分析中探测器响应函数建立方法

在X荧光能谱测量及分析过程中,通过建立探测器响应函数,可以实现对X荧光能谱中的全能峰峰形描述,有助于提高X荧光能谱分析速度、准确度和自动化程度。在X荧光能谱测量中,针对半导体探测器建立响应函数模型的理论与建模技术,文中对三种典型探测器响应函数建模方法,以及全能峰标准差、法诺因子等关键参数的求取进行了论述,并对已有研究进行了总结和比较。最后,对X荧光能谱测量中探测器响应函数建模方法给出了建议。     

不同热交联气氛对含氟聚芳醚近红外光学吸收的影响

光波导材料对于光通信及光互联产业的发展起着至关重要的作用,例如可用来制作波分复用系统中的光衰减器,热光开关,阵列波导光栅复用／解复用器,光滤波器等．聚合物材料由于其容易加工,与无机材料相比有相对较低的制作成本,而从众多光波导材料中脱颖而出．目前光通讯材料与器件的研究应用主要集中在1．3和1．55μm两个波长上,然而随着波分复用(WDM)技术的发展,     

配位交联的NBR/PVC合金的制备及表征

橡胶通常是通过共价键将线型高分子交联成三维网状结构,而交联过的橡胶不溶不熔,很难再生利用,对环境造成严重污染,为了解决橡胶材料再生利用问题,许多人尝试将一些非共价键用于橡胶的交联,如热塑性弹性体(物理交联)、离子弹性体Ⅲ及通过氢键交联的橡胶,然而由于上述非共价键作用较弱,导致材料力学性能较差及高温使用性能下降,配位键是所有非共价键中最强的键,     

竹木质素的红外光谱与X射线光电子能谱分析

应用傅里叶转换红外光谱(FTIR)和X射线光电子能谱(XPS), 研究了3种提纯方法得到的竹木质素及其化学反应产物的化学结构特性. 确定竹木质素C_1s的电子结合能分别为283.52 (C—H或C—C), 284.58～285.72 (C—OR或C—OH), 286.10～286.44 (C＝O或HO—C—OR), 287.65～287.72 (O—C＝O) eV. O_1s的电子结合能分别为530.31(羟基氧原子), 531.45～531.72(醛或酮的羰基氧原子), 532.73～533.74(酯键或羧酸中的羰基氧原子) eV. 竹木质素中的结构单元之间主要是通过醚键和碳碳单键连接, 慈竹磨木木质素结构单元中醚键、碳碳单键、酯键、羰基和烯双键的比例为100∶63∶32∶40∶32 (49.3∶31.0∶16.0∶19.9∶16.0)     

Energy Spectrum of La3Lu2Ga3O12：Cr^3＋ and Its Pressure-Induced R-Line-Shift Reversal

By means of both the theory for pressure-induced Shifts （PS） of energy spectra and the theory for shifts of energy spectra due to electron-phonon interaction （EPI）, the normal-pressure energy spectra of α and β centers of Cr^3＋ ions for LLGG：Cr^3＋ and the PS＇s of R1 lines and U band of these centers have been calculated at 10 K, respectively. The total calculated results are in very good agreement with the experimental data. For LLGG：Cr^3＋, the pressureinduced low-high crystal-field transition and the reversal of R1-line PS take place. The pressure-dependent variation of Rmix^ei （2E - 4T2） [mixing-degree of （t2^2 （^3T1）e^4T2） and （t2^3 E） base-wavefunctions in the wavefunction of R1 state without EPI] plays a key role for the reversal of R1-line PS. The behavior of the pure electronic PS of R1 line is quite different from that of the PS of R1 line due to EPI. It is the combined effect of them that gives rise to the total PS of R1 line. The comparison between R1-line PS＇s of GSGG：Cr^3＋ and LLGG：Cr^3＋ has been made. It is found that a peak of R1-line PS appears at Rmix^ei （^2E - ^4T2） ≈ 0.08.     

ZnTe(ZnTe∶Cu)多晶薄膜的XPS研究

用共蒸发法在室温下制备了ZnTe及ZnTe∶Cu多晶薄膜,测量了电导率温度曲线,发现不掺杂的ZnTe薄膜的暗电导随温度的增加而线形增加,呈常规的半导体材料特征;掺Cu的ZnTe薄膜在温度较低时,lnσ随温度升高而缓慢增加,随后缓慢降低,达到一极小值,当温度继续升高时又陡然增加,呈现异常现象。用XPS研究了N₂气氛下退火前后表面状态,发现不掺Cu的ZnTe薄膜呈现富Te现象。掺Cu后Te氧化明显,以ZnTe形式存在的Te明显减少;ZnTe∶Cu薄膜中Zn的含量在退火前后变化明显,退火前,Zn主要以ZnTe形式存在,退火后Zn原子向表面扩散,使表面成分更加均匀,谱峰变宽;退火时,部分Cu原子进入晶格形成Cu_xTe相,引起载流子浓度变化,导致ZnTe∶Cu多晶薄膜的电导温度关系异常。     

Dynamical properties of two-band superlattices with strong interband coupling in real space under the action of ac and dc－ac fields

Within a two-band tight-binding model driven by ac and dc－ac electric fields, using numerical methods, we investigate the dynamics of electrons and the quasi-energy spectrum of the system with strong interband coupling in real space. We find that when the bandwidth is suppressed to a value much smaller than the field frequency, the dynamical localization can exist in the system. The corresponding regions are found for the occurrence of dynamical localization in the parameter space.