HNS-Ⅳ炸药的点火增长模型

进行直径?10mm 的圆筒实验,根据冲击Hugoniot关系,拟合了HNS-Ⅳ炸药的未反应时的JWL 状态方程,并通过数值模拟确定了HNS-Ⅳ炸药爆轰产物JWL状态方程参数;测量炸药/窗口界面粒子速度 历程,结合数值模拟获得HNS-Ⅳ炸药的点火增长模型反应速率方程参数。研究表明,HNS-Ⅳ炸药点火增长 模型能够描述反应过程并与实验结果吻合较好。     

三代像增强器透射式GaAs阴极光电发射稳定性研究

为了解决三代像增强器管内阴极灵敏度下降问题,用质谱计对激活工艺过程进行质量检测,并确定了激活工艺参数,通过对阴极原子级洁净表面获得和激活铯、氧提纯工艺参数优化研究,对制备的透射式GaAs阴极光电发射稳定性进行在线试验,结果表明:在10-9 Pa真空环境中,优化工艺激活的光电阴灵敏度(1 500 A/lm)稳定,而且500 h不下降,铟封到管内的阴极灵敏度下降与真空度降低和有害气体污染有关。     

Influences of surface effects and large deformation on the resonant properties of ultrathin silicon nanocantilevers

The purpose of the present work is to quantify the influences of the discrete nature, the surface effects, and the large deformation on the bending resonant properties of long and ultrathin 〈100〉 silicon nanocantilevers. We accomplish this by using an analytical semi-continuum Keating model within the framework of nonlinear, finite deformation kinematics. The semi-continuum model shows that the elastic behaviors of the silicon nanocantilevers are size-dependent and surface-dependent, which agrees well with the molecular dynamics results. It also indicates that the dominant effect on the fundamental resonant frequency shift of the silicon nanocantilever is adsorption-induced surface stress, followed by the discrete nature and surface reconstruction, whereas surface relaxation has the least effect. In particular, it is found that a large deformation tends to increase the nonlinear fundamental frequency of the silicon nanocantilever, depending not only on its size but also on the surface effects. Finally, the resonant frequency shifts due to the adsorption-induced surface stress predicted by the current model are quantitatively compared with those obtained from the experimental measurement and the other existing approach. It is noticed that the length-to-thickness ratio is the key parameter that correlates the deviations in the resonant frequencies predicted from the current model and the empirical formula.     

电子束蒸镀ＭＣＰ超薄防离子反馈膜及膜层特性分析

为了进行ＭＣＰ超薄防离子反馈膜的性能评价研究,并使这种膜层具有良好离子阻挡能力,利用电子束蒸发方法,在微通道板（ＭＣＰ）输入面上制备一种超薄Ａｌ２Ｏ３防离子反馈膜,其膜层厚度为２ ｎｍ时仍连续致密。通过对Ａｌ２Ｏ３防离子反馈膜的电子透过特性测试,给出２ ｎｍ及４ ｎｍ厚防离子反馈膜对应的死区电压分别约为１５０ Ｖ及２００ Ｖ;利用Ｍｏｎｔｅ-Ｃａｒｌｏ法模拟分析了Ａｌ２Ｏ３防离子反馈膜的离子阻挡特性,２ ｎｍ及４ ｎｍ厚Ａｌ２Ｏ３防离子反馈膜对碳离子等的阻挡率分别高于４０％及８６％,另外对有无膜的ＭＣＰ电特性进行测试,可以看出镀２ ｎｍ及４ ｎｍ厚的膜后,ＭＣＰ电子增益分别降低了５１％及８１％。     

基于啁啾脉冲干涉仪的高精度定位方案设计分析

提出利用啁啾脉冲干涉仪进行高精度空间定位的新方案,该方案利用2个具有强的经典频率关联的正负啁啾脉冲,入射到分束器后经和频晶体产生和频干涉信号,通过探测所得干涉信号精确确定经过不同路径的2个光信号的相对延迟时间,从而精确确定目标位置,实现高精度定位,理论上可以达到微米量级的定位精度。研究正负啁啾脉冲不完全对称即正负啁啾系数大小的差异对定位结果的影响。结果表明:正负啁啾系数大小的差异对定位结果影响很小,定位结果对这种差异有很强的容忍度。该方案除具有量子定位中HOM(Hong-Ou-Mandel)干涉仪的所有优点外,还具有装置简单,抑制损耗等优点。     

AlCl3催化1,1 二甲基1-2,2,2 四氯二硅烷裂解机理的计算

摘要：采用密度泛函（B3LYP）及二级微扰(MP2)方法对AlCl3催化1,1 二甲基 1,2,2,2 四氯二硅烷裂解反应的机理进行了计算.结果表明,该二硅烷在三氯化铝催化剂作用下可以同时按2种通道进行裂解.裂解反应分3步进行,通道1的速控步为第3步,其活化能为241.656 kJ·mol-1.通道2的速控步为第1步,其活化能为250227 kJ·mol-1.从速控步的活化能可知,2种反应通道进行的难易程度相差不大.裂解反应为放热反应,反应的理论产率较高.     

敞开体系法合成W-MCM-41介孔催化剂及其性能

以十六烷基三甲基溴化铵为模板剂、正硅酸乙酯为硅源、钨酸钠为钨源,采用敞开体系法制备了W-MCM-41介孔催化剂样品。利用多种表征手段对其进行了表征,考察了投料中硅钨摩尔比对W-MCM-41结构和催化环己烯氧化性能的影响。研究发现,所制W-MCM-41介孔催化剂样品均保持着MCM-41的介孔结构,而且表现出较好的催化性能;随着硅钨摩尔比的减小,样品晶胞参数和晶面间距逐渐增大,而硅钨摩尔比为30时所制的W-MCM-41样品催化活性最高。     

弧形调强放射治疗对剂量计算方法的要求

在弧形调强放射治疗的治疗计划设计中, 由于包含有很多照射方向, 调强最优化的射束元矩阵计算需要很大的计算量和存储量, 为提高计算效率常使用简化剂量计算模型计算射束元矩阵, 因此有必要研究简化模型对治疗计划质量产生影响。 对一个模拟例子和一个临床实例, 使用没考虑散射效应的原射线剂量计算模型计算射束元矩阵, 由此进行最优化计算。 在得到最优化强度分布后, 通过比较原射线剂量计算模型和微分卷积剂量计算模型得到的剂量分布, 研究了不同射束数目条件下, 使用简化剂量计算模型计算射束元剂量矩阵对最终的剂量分布质量的影响。 结果表明, 在射线束很多的情况下(对应弧形调强照射）, 用简化的剂量计算模型, 即不考虑散射来计算射束元剂量矩阵, 会导致靶区剂量分布的质量大大低于预期的剂量分布质量, 因此, 弧形调强放射治疗的最优化计算中, 有效考虑散射的影响是必要的。 In the treatment planning for arc intensity modulated radiation therapy, because many irradiation directions are involved, the computing time and storage space needed for calculating beamlet dose matrices in optimization is quite heavy. In order to improve the computation efficiency, the simplified dose calculation is often used for the calculation of the dose matrices. Thus, it is deserved to study how this simplification could influence the quality of the treatment plan. In this paper, a simulation and a clinical case are adopted. Using the primary dose calculation model without taking into account the scattering effect to generate the dose matrices of beamlets, the optimization for beam intensity profile are firstly carried out. Then, based on the obtained intensity profile, the dose distributions are recalculated by using the primary dose calculation model and the differential convolution superposition dose calculation model which is more accurate but more time consuming. By comparing dose distributions obtained by this two models, the influence of using simplified model for dose matrix calculation on beam profile optimization is studied. The results demonstrate that when the beam number is large(corresponding to the arc modulated radiation), using the simplified model for the calculation of dose matrix of beamlets will reduce the quality of dose distribution greatly comparing with the expected dose distribution quality. Thus it is very necessary to correctly take into account the scattering effect in beam profile optimization for the arc intensity modulated radiation therapy.     

溴酚蓝修饰玻碳电极测维生素C中抗坏血酸含量

使用溴酚蓝修饰的玻碳电极,以快速循环伏安法测定维生素C片剂中抗坏血酸含量并优化实验条件.结果表明,溴酚蓝(BPB)修饰玻碳电极用于抗坏血酸含量的分析,有良好的稳定性和抗干扰能力.在0.0050~0.1500 g.L-1浓度范围内,峰电流与浓度呈良好的线性关系,R=-0.9991,检出限为0.0010 g.L-1,结果令人满意.     

室温合成Cu0.8Ag1.2S和Cu0.5Ag1.5Se纳米晶及X射线光电子能谱表征

X射线光电子能谱;银铜硫三元化合物;银铜硒三元化合物