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The structural stability and electrical properties of AlB2-type MnB2 were studied based on high pressure angledispersive x-ray diffraction, in situ electrical resistivity measured in a diamond anvil cell(DAC) and first-principles calculations under high pressure. The x-ray diffraction results show that the structure of AlB2-type MnB2 remains stable up to 42.6 GPa. From the equation of state of MnB2, we obtained a bulk modulus value of 169.9±3.7 GPa with a fixed pressure derivative of 4, which indicates that AlB2-type MnB2 is a hard and incompressible material. The electrical resistance undergoes a transition at about 19.3 GPa, which can be explained by a transition of manganese 3d electrons from localization to delocalization under high pressure. 相似文献
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钼酸铅(PbMoO4)具有高的声光品质因数、低的声损耗、良好的声阻抗匹配等性质,被广泛应用于声光偏转器、调制器、可调滤光器、声表面波器件等各类声光器件,其优异的低温闪烁性能亦引起人们的注意,具有在核设备方面的应用潜力。为探讨其晶体结构和物理性质,在金刚石对顶砧上原位测量了PbMoO4的拉曼光谱,并测量了其在几个不同压力点下电导率随温度的变化。实验发现,压力在12.5 GPa时,拉曼峰完全消失,说明压力在10.8~12.5 GPa之间PbMoO4样品出现了非晶态转变。当从26.5 GPa卸压到9.4 GPa时,PbMoO4的拉曼谱在低波数出现无序化,而在2.4 GPa压力下858 cm-1峰又重新出现,说明样品结构由无序向晶化回复。压力在10.8 GPa以上时,电导率随着温度的增加而显著增加,且随着压力的增加也明显增加。 相似文献
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等离子体增强MOCVD法生长ZnO薄膜 总被引:3,自引:0,他引:3
利用等离子体增强MOCVD法生长出 ZnO薄膜,用X射线衍射谱观察到位于 2θ34.56°处(0002)的衍射峰,表明ZnO沿c方向呈柱状生长.通过荧光光谱,观察到来自于激子的高强度的近带边紫外光发射(375um).紫外发射光强度与深能级复合发射光强度比高达 193,显示出材料的高质量,并通过原子力显微镜加以验证.为了实现高阻ZnO薄膜,利用高温富氧分段退火和用N2 气进行掺氮两种方法生长高阻ZnO薄膜.结果表明,电阻率由0.65 Ω·cm分别升高到1100 Ω·cm(分段退火)和5×104Ω·cm(掺氮).进一步比较发现,掺氮的样品不仅电阻率高,而且光荧光特性好,显示出更高的薄膜质量. 相似文献
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采用同步辐射能量色散X射线衍射技术和金刚石对顶砧高压装置,对ZnS:Eu纳米晶进行了原位高压X光衍射实验.最高压力为30.8Pa.当压力为11.5GPa时,ZnS:Eu发生了一次从纤锌矿到闪锌矿的结构相变.在压力为16.0GPa时,又发生了明显的结构相变,相变后的结构为岩盐矿,其相变压力较体材料高.得到了Birch-Murnaghan状态方程、ZnS:Eu纳米晶的体模量和压力导数.ZnS:Eu纳米晶的体模量高于体材料的值,表明纳米材料较体材料的硬度高. 相似文献
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We perform the in-situ conductivity measurement on BaF2 at high pressure using a microcircuit fabricated on a diamond anvil cell. The results show that BaF2 initially exhibits the electrical property of an insulator at pressure below 25 GPa, it transforms to a wide energy gap semiconductor at pressure from 25 to 30 GPa, and the conductivity increases gradually with increasing pressure from 30 GPa. However, the metallization predicted by theoretical calculation at 30-33 GPa cannot be observed. In addition, we measure the temperature dependence of the conductivity at several pressures and obtain the relationship between the energy gap and pressure. Based on the experimental data, it is predicted that BaF2 would transform to a metal at about 87 GPa and ambient temperature. The conductivity of BaF2 reaches the order of 10^-3Ω^-1 cm^-1 at 37 GPa and 2400 K, the superionic conduction is not observed during the experiments, indicating the application of pressure elevates greatly the transition temperature of the superionic conduction. 相似文献