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An approach to controlling the fluorescence of graphene quantum dots: From surface oxidation to fluorescent mechanism 下载免费PDF全文
We report a facile method of synthesizing graphene quantum dots(GQDs) with tunable emission. The as-prepared GQDs each with a uniform lateral dimension of ca. 6 nm have fine solubility and high stability. The photoluminescence mechanism is further investigated based on the surfacestructure and the photoluminescence behaviors. Based on our discussion, the green fluorescence emission can be attributed to the oxygen functional groups, which could possess broad emission bands within the π –π * gap. This work is helpful to explain the vague fluorescent mechanism of GQDs, and the reported synthetic method is useful to prepare GQDs with controllable fluorescent colors. 相似文献
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采用高温固相法制备了长余辉发光粉Ba1-xCaxAl2O4:Eu^2 ,RE^3 (RE^3 =Dy^3 ,Nd^3 ),测量了其发射光谱、激发光谱、余辉衰减光谱和热释光谱,分析了其发光特性。在紫外线的激发下样品的发射波长随着x的变化而变化,x从0到0.6的范围变化时,发射波长相应地从498nm减小到440nm,当x大于0.6以后,波长保持440nm不再变化。通过XRD光谱对其结构进行了分析,得出Ca离子在BaAl2O4基质中有极限溶解度x0=0.4,当x大于0.4时,基质结构中出现杂相。通过热释光谱,对基质中的陷阱情况进行了分析,解释了由于x值的不同而造成的余辉时间长短的差异。 相似文献
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稀土离子Ce,Tb掺杂硼磷酸锶荧光粉的发光性质 总被引:1,自引:1,他引:0
采用高温固相法合成了2SrO.0.84P2O5.0.16B2O3:RE3 (RE=Ce,Tb)荧光粉,研究了其中Ce3 ,Tb3 的光谱性质,以及Ce3 与Tb3 共掺杂时的能量传递现象。发现Ce3 在232,296nm处有两个激发带,发射光谱中也有两个峰,且两者重叠严重,用高斯分峰拟合得到曲线峰值分别为325,344nm,这两个发射峰可能来自于两个不同的发光中心的发射。Tb3 的激发光谱中以370nm的激发峰最强,发射光谱中同时观测到来自5D3和5D4的发射,表明在此体系中能级5D3和5D4间的无辐射跃迁过程不显著。Ce3 和Tb3 在此基质中的共掺杂存在Ce3 到Tb3 的有效能量传递。 相似文献
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Ultrafast interlayer photocarrier transfer in graphene–MoSe_2 van der Waals heterostructure 下载免费PDF全文
We report the fabrication and photocarrier dynamics in graphene–MoSe_2 heterostructures. The samples were fabricated by mechanical exfoliation and manual stacking techniques. Ultrafast laser measurements were performed on the heterostructure and MoSe_2 monolayer samples. By comparing the results, we conclude that photocarriers injected in MoSe_2 of the heterostructure transfer to graphene on an ultrafast time scale. The carriers in graphene alter the optical absorption coefficient of MoSe_2. These results illustrate the potential applications of this material in optoelectronic devices. 相似文献
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On the basis of first principles calculations, we report that the type and density of charge carriers of epitaxial graphene on Si C(0001) can be deliberately controlled by decorating the buffer layer with specific atoms(i.e., F, Cl, O, or N). More importantly, a fine tuning of the doping behavior from intrinsic n-type to charge neutrality to p-type and interface magnetism is achieved via increasing the doping concentration of F atoms on the buffer layer. Our results suggest an interesting avenue to the application of epitaxial graphene in nanoscale electronic and spintronic devices. 相似文献
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LnZr(BO3)2:Eu3+(Ln=Ba,Sr)的真空紫外光谱特性的研究 总被引:3,自引:3,他引:0
采用高温固相法合成了Ba(1-x)SrxZr(BO3)2:Eu3 系列样品,样品Ba(1-x)SrxZr(BO3)2:Eu3 激发谱在130~170nm和230 nm区域有两个很强的吸收带,位于130~170nm的吸收带主要是硼酸盐基质的吸收;位于230nm附近的吸收主要是Eu3 电荷转移态的吸收.当在样品中以Al部分取代Zr时,电荷转移态的吸收明显增强,并且Ba(1-x)SrxZr(BO3)2:Eu3 发射强度也会明显增强;随着x的增大,硼酸盐基质的吸收强度减弱,基质吸收带的主峰值向低能方向移动了大约30 nm.样品Ba(1-x)SrxZr(BO3)2:Eu3 在147nm激发下,发射出主峰值位于616nm的强红光,对应Eu3 电偶极(5D0→7F2)跃迁发射. 相似文献
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利用紫外光照射制作两组光纤布拉格光栅,使用高温炉对第一组光栅进行850℃退火处理,在擦除初始光栅后制备出高温再生光栅,该组再生光栅的布拉格波长的变化范围为0.22nm;平均透射率为2.57dB,折射率变化范围为0.52dB。对第二组光栅在850℃退火处理后进行1 100℃后退火,该组的布拉格波长变化范围为0.41nm;平均透射率为0.69dB,折射率变化范围为0.16dB。后退火处理会放大再生光栅的波长差异,其原因是退火过程中各光栅固定拉力之间的微小差别。光纤布拉格光栅从擦除到再生是一个可控的过程,具有很好的重复性,通过高温退火法制备再生光栅的大规模生产是可行的。 相似文献