Birefringence of SbSI and SbSeI crystals at the region of antiferroelectric phase transition

Anomalous behavior has been observed in the temperature range of T = 140–145 °C. The electric current I(T) of SbSI and SbSeI crystals along the c(z) axis changes significantly at the region of the antiferroelectric phase transition when DC voltage is applied. The peak positions are observed at 140 °C and 145 °C for SbSI and SbSeI, respectively. The birefringence spectra show temperature-dependent changes upon retardation m, confirming the antiferroelectric phase transition for both crystals. The peak positions observed from the optical measurements do not differ from the electrical measurements, showing the transition point at 140?°C and 145?°C for SbSI and SbSeI, respectively.     

Efficiently enhanced energy storage performance of Ba2Bi4Ti5O18 film by co-doping Fe3+ and Ta5+ ion with larger radius

We present an efficient strategy, that is the co-substitution of Fe³⁺ and Ta⁵⁺ ions with large radius for Ti⁴⁺ ion, to enhance energy storage performance of Ba₂Bi₄Ti₅O₁₈ film. For the films co-doped with Fe³⁺ and Ta⁵⁺ ions, the maximum polarization under the same external electric field is improved because the radius of Fe³⁺ and Ta⁵⁺ ions is larger than that of Ti⁴⁺ ion. Moreover, due to the composition and chemical disorder, the relaxor properties are also slightly improved, which can not be achieved by the film doped with Fe³⁺ ions only. What is more, for the films doped with Fe³⁺ ion only, the leakage current density increases greatly due to the charge imbalance, resulting in a significant decrease in breakdown strength. It is worth mentioning that the breakdown strength of Fe³⁺ and Ta⁵⁺ ions co-doped film does not decrease due to the charge balance. Another important point is the recoverable energy storage density of the films co-doped with Fe³⁺ and Ta⁵⁺ ions has been greatly improved based on the fact that the maximum external electric field does not decrease and the maximum polarization under the same external electric field increases. On top of that, the hysteresis of the polarization has also been improved. Finally, the co-doped films with Fe³⁺ and Ta⁵⁺ ions have good frequency and temperature stability.     

弛豫铁电单晶的研究进展—压电效应的起源研究

由于具有优异的压电性能,弛豫铁电单晶自上世纪90年代问世以来即成为了铁电压电领域研究的热点材料,并被认为是研发下一代高性能换能器、传感器等器件的重要压电材料。弛豫铁电单晶不但压电常数可达2500 pC/N,约为软性Pb(Zr,Ti)O3(PZT)陶瓷的5倍,而且其电致应变滞后也远小于软性PZT陶瓷。因此,弛豫铁电单晶高压电性能的产生机理一直是铁电压电领域的研究热点。本文主要介绍了弛豫铁电单晶材料在近些年的发展,从本征压电效应(晶格压电畸变)的角度归纳总结了弛豫铁电单晶高压电效应的产生机理,着重探讨了弛豫铁电单晶的重要特点—剪切压电效应。在本征效应的基础上,本文对弛豫铁电单晶压电效应与晶体组分、切向以及温度的关系进行了分析。需要指出的是,目前基于本征角度对弛豫铁电单晶高压电效应的分析仍处于定性的阶段,因而还不能完全排除一些可能导致弛豫铁电单晶高压电效应的非本征物理机制。     

Study of Phase Transition Properties in Epitaxial Ferroelectric Film

Based on the transverse Ising model and using decoupling approximation to the Fermi-type Green's function, we study the phase transition properties of the epitaxial ferroelectric film with one substrate. A general recursive equation of the ferroelectric thin film with two n-layer materials is obtained, which enables us to study the phase transition properties for any number layers forepitaxial ferroelectric thin film. With the help of this equation, we analyze the effect of the exchange interaction and the transverse field in the phase diagram, the influence to the polarizations and Curie temperature numerically. The results show that epitaxial ferroelectric film are able to induce a strong increase or decrease of Curie temperature to different exchange interactions and transverse fields within the epitaxial film layers. The theoreticalresults are in reasonable accordance with experimental data of different ferroelectric thin film.     

A Ferroelectric Frequency-Doubling Material-Potassium Lithium Niobate

The potassium lithium niobate crystals have been grown up. The shapes of solid-melt interfaces which maintaining the steady growth of the potassium lithium niobate crystals have been described. The optical transmission spectrum of the crystal has been surveyed. The perfected crystals showed good Second Harmonic Generation properties.     

弛豫铁电体结构起伏与弛豫性研究

制备了铅基弛豫铁电体0.9Pb(Mg_1/3Nb_2/3)O₃-0.1PbTiO₃和Pb(Zn_1/3Nb_2/3)O₃基陶瓷. 铅基弛豫铁电体PMNT, PZN基陶瓷弛豫过程可用局域冻结模型描述. 在微畴-宏畴转变过程中, 弛豫铁电体产生结构起伏; 在相同的频率条件下, 弛豫铁电体的结构起伏程度越大, 弛豫程度越低. 在微畴-宏畴转变过程中, 随微畴的增大, 弛豫铁电体的弛豫特性减弱或消失.     

A relation between long-range correlation and dielectric anomaly

A double-well potential model is established to explain the dielectric anomaly of ferroelectrics. The dielectric constant consists of two parts. One part is independent of the long-range correlation, following 1/T law. The other part originates from the long-range correlation, and can be described by the correlation length well. The deviation from Curie-Weiss law in a small size sample originates from the decrease of the long-range correlation. Project supported by the Climbing Program of Foundamental Research of China.     

The Effect of Annealing Temperature on Electrical Properties of SrBi2Ta2O9/Insulators/Si(MFIS) Structure for NDRO-type FRAM Devices

We have fabricated Pt/SBT/insulator/Si structure for the transistor gate in MFIS-FET and investigated the electrical properties of MFIS structure with various insulator materials. SrBi₂Ta₂O₉ films as a ferroelectric layer were deposited by metal organic decomposition (MOD) technique, on various insulator structures including SiON, and Al₂O₃ as well as on Pt/Ti/SiO₂/Si structures. The effect of annealing temperature on the electrical properties of MFIS structures was investigated in order to analyze the applicability to conventional CMOS process. Although the remnant polarization of SBT films for MFM structure was increased with increasing annealing temperature, the memory window which has a relationship with remnant polarization of ferroelectrics was differently displayed with insulator structure in MFIS structure.     

紫外激光诱导近化学计量比钽酸锂晶体铁电畴反转

对紫外激光诱导近化学计量比钽酸锂晶体铁电畴反转进行了实验研究。波长为351 nm的连续紫外激光被聚焦在近化学计量比钽酸锂晶体的-z表面,同时沿与晶体自发极化相反的方向施加均匀外电场。实验证实紫外激光辐照可以有效地降低晶体畴反转所需的矫顽电场,采用数字全息干涉测量技术检测证实在激光辐照区域实现局域畴反转。研究表明采用紫外激光诱导可以实现对近化学计量比钽酸锂晶体铁电畴反转的局域控制。提出了物理机理的理论分析,认为外电场和激光辐照场的共同作用在晶体内部产生高浓度、大尺寸的缺陷结构,缺陷一定程度上降低畴体成核和畴壁运动所需要克服的退极化能和畴壁能,实现激光诱导畴反转。