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41.
The two-dimensional (2D) C3N has emerged as a material with promising applications in high performance device owing to its intrinsic bandgap and tunable electronic properties. Although there are several reports about the bandgap tuning of C3N via stacking or forming nanoribbon, bandgap modulation of bilayer C3N nanoribbons (C3NNRs) with various edge structures is still far from well understood. Here, based on extensive first-principles calculations, we demonstrated the effective bandgap engineering of C3N by cutting it into hydrogen passivated C3NNRs and stacking them into bilayer heterostructures. It was found that armchair (AC) C3NNRs with three types of edge structures are all semiconductors, while only zigzag (ZZ) C3NNRs with edges composed of both C and N atoms (ZZCN/ CN) are semiconductors. The bandgaps of all semiconducting C3NNRs are larger than that of C3N nanosheet. More interestingly, AC-C3NNRs with CN/CN edges (AC-CN/CN) possess direct bandgap while ZZ-CN/CN have indirect bandgap. Compared with the monolayer C3NNR, the bandgaps of bilayer C3NNRs can be greatly modulated via different stacking orders and edge structures, varying from 0.43 eV for ZZ-CN/CN with AB′-stacking to 0.04 eV for AC-CN/CN with AA-stacking. Particularly, transition from direct to indirect bandgap was observed in the bilayer AC-CN/CN heterostructure with AA′-stacking, and the indirect-to-direct transition was found in the bilayer ZZ-CN/CN with ABstacking. This work provides insights into the effective bandgap engineering of C3N and offers a new opportunity for its applications in nano-electronics and optoelectronic devices. 相似文献
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43.
A nonanuclear Cu4^ⅡTi5^Ⅳheterometallic cluster,[Ti5 Cu4 O6(ba)(16)](1,Hba=benzoic acid)was synthesized in one-pot reaction under the solvothermal condition.The metallic skeleton 1 contains a Ti5 core constructed from two vertex-shared Ti3 triangles and four separated Cu atoms outside which are connected together byμ3-O^2- ions.Total 16 ba ligands adoptμ2-η^1:η^1 coordination mode to protect the overall hetero metallic co re.Due to the unique d-d transitions of Cu^Ⅱion,the reflectance spectrum of 1 displays broad and strong absorption towards visible light extending to the near-infrared region.Moreover,1 shows almost purely paramagnetic behavior with the presence of weak antiferromagnetic interactions at low temperatures. 相似文献
44.
经过短短十年的发展,钙钛矿太阳能电池效率已经超过25%,极具商业化价值,这得益于三维(3D)钙钛矿材料具有合适的带隙、吸光系数高、电子迁移距离长等优点。但3D钙钛矿的稳定性依然是其亟待解决的问题。二维(2D)钙钛矿器件除了兼具3D钙钛矿的优异光电性质之外,其稳定性良好,是解决3D钙钛矿太阳能电池稳定性问题的一个可行方案。2D钙钛矿晶格中的疏水性大烷基胺阳离子能阻止湿气侵入的可能路径,使其成为光电器件的备选材料。由于2D钙钛矿对许多不同的有机和无机成分具有较高的耐受性,使其组成具有多样性,进而影响其能带变化。本文对2D钙钛矿的带隙调控及能带调控进行总结,希望对制备高效、稳定的低维度钙钛矿太阳能电池具有一定的指导意义。 相似文献
45.
Ting Guo XiongWei Yang Qian Geng Zhen Li YueMing Li Xian Wang Hu Zhang 《中国科学:物理学 力学 天文学(英文版)》2020,(2):93-103
This study presents a two-dimensional phononic crystal with heat flux manipulation and wide bandgaps of out-of-plane modes within the low-frequency range. The anisotropic matrix made of spiral-multilayered materials with different thermal conductivities, and the coating layer inserted with metal are designed for heat flux manipulation. Rubber-coated metal cylinders are periodically embedded in the anisotropic matrix to obtain the low-frequency bandgaps of out-of-plane modes. Numerical simulation is carried out to validate the heat and elastic characteristics of the spiral-multilayered anisotropic structure and reveal the effects of the laying angle and temperature on the bandgaps. Subsequently, a spiral-multilayered plate with periodic structures is studied, which shows an obvious vibration attenuation in the frequency ranges of the bandgaps and a deflected heat flux from the initial propagation direction. In the experimental investigation, the multi-phase spiral-multilayered anisotropic plate is simplified to a single-phase anisotropic plate made of aluminum. The characteristics of this type of anisotropic phononic crystal structure may pave the way for the design of a new kind of thermo-acoustic metamaterial serving in combined thermal and acoustic environments. 相似文献
46.
宽禁带半导体具备禁带宽度大、电子饱和飘移速度高、击穿场强大等优势,是制备高功率密度、高频率、低损耗电子器件的理想材料。碳化硅(SiC)材料具有热导率高、化学稳定性好、耐高温等优点,在SiC衬底上外延宽禁带半导体材料,对充分发挥宽禁带半导体材料的优势,并提升宽禁带半导体电子器件的性能具有重要意义。得益于SiC衬底质量持续提升及成本不断降低,基于SiC衬底的宽禁带半导体电子市场占比呈现逐年增加的态势。在SiC衬底上外延生长高质量的宽禁带半导体材料是提高宽禁带半导体电子器件性能及可靠性的关键瓶颈。本文综述了近年来国内外研究者们在SiC衬底上外延SiC、氮化镓(GaN)、氧化镓(Ga2O3)所取得的研究进展,并展望了SiC衬底上宽禁带半导体外延的发展及应用前景。 相似文献
47.
《Journal of Polymer Science.Polymer Physics》2018,56(6):532-542
Aggregates – that is short‐ranged ordered moieties in the solid‐state of π‐conjugated polymers – play an important role in the photophysics and performance of various optoelectronic devices. We have previously shown that many polymers change from a disordered to a more ordered conformation when cooling a solution below a characteristic critical temperature . Using in situ time‐resolved absorption spectroscopy on the prototypical semiconducting polymers P3HT, PFO, PCPDTBT, and PCE11 (PffBT4T‐2OD), we show that spin‐coating at a temperature below can enhance the formation of aggregates with strong intra‐chain coupling. An analysis of their time‐resolved spectra indicates that the formation of nuclei in the initial stages of film formation for substrates held below seems responsible for this. We observe that the growth rate of the aggregates is thermally activated with an energy of 310 meV, which is much more than that of the solvent viscosity (100 meV). From this we conclude that the rate controlling step is the planarization of a chain that is associated with its attachment to a nucleation center. The success of our approach for the rather dynamic deposition method of spin‐coating holds promise for other solution‐based deposition methods. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2018 , 56, 532–542 相似文献
48.
一维三元异质结构光子晶体反射特性 总被引:1,自引:0,他引:1
利用传输矩阵法对一维三元光子晶体异质结构的光学特性进行了研究,讨论了介质层厚无序度对三元结构光子禁带的影响.研究表明,将具有相互交叠光子禁带的一维光子晶体叠加构成异质结,可以有效地增大全角度反射的频率范围,当入射角从0°增大到89°,该结构均可实现从0.410 w/w0到0.654 w/w0宽频波段的全反射;相对于二元结构,三元结构可以减小在实际制作过程中随机误差引起的介质层厚无序对光子带隙的影响.该研究结果可为实现可见光及红外光波段大角度反射器的制备及应用提供理论支持. 相似文献
49.
β-Ga_2O_3是一种新型的超宽禁带氧化物半导体,禁带宽度约为4.9 eV,对应日盲区,对波长大于253 nm的深紫外一可见光具有高的透过率,是天然的日盲紫外探测及深紫外透明电极材料.本文介绍了Ga_20_3材料的晶体结构、基本物性与器件应用,并综述了β-Ga_2O_3在深紫外透明导电电极和日盲紫外探测器中的最新研究进展.Sn掺杂的Ga_2O_3薄膜电导率可达到32.3 S/cm,透过率大于88%,但离商业化的透明导电电极还存在较大差距.在日盲紫外探测器应用方面,基于异质结结构的器件展现出更高的光响应度和更快的响应速度,ZnO/Ga_2O_3核/壳微米线的探测器综合性能最佳,在-6 V偏压下其对254 nm深紫外光的光响应度达1.3×10~3A/W,响应时间为20μs. 相似文献
50.