物理教师课下辅导的几点建议

课下辅导是物理教学的重要组成部分，是教师经常了解和检查教学效果的一个有效途径，是解决统一教学与学生个性差异矛盾的主要措施之一，是课堂教学的重要补充。只重视课堂教学而忽视课下辅导是不完善的教学，因为课下辅导可及时获得反馈信息，有利于因材施教；可与学生沟通感情，更有     

超声射流下12C16O+离子A2∏1/2,3/2←X2∑+激光诱导荧光激发谱

用一束波长为230.1 nm的激光, 通过(2+1)共振增强多光子电离(REMPI)过程激发超声射流冷却的CO分子制备处于基电子态X2∑+的CO+离子, 随后引入另一束可调谐激光将CO+离子激发至A2∏1/2,3/2态, 利用光电倍增管(PMT)检测发射的荧光信号强度随激发光波长的变化, 分别在487-493 nm和453-459 nm波长范围内获得了CO+离子A2∏1/2,3/2←X2∑+电子态跃迁(0,0)和(1,0)带的激光诱导荧光(LIF)激发谱.     

热处理对SILAR法制备CuInSe_2薄膜性能的影响

0引言铜铟硒(CIS)具有合适的带隙、高光吸收系数、适当的电荷密度和迁移率,是一种用于薄膜太阳能电池的备受关注的吸收材料[1]。目前CuInSe2薄膜已采用多种方法进行制备,如金属前驱体硒化法[2]、共沉积法[3]、溅射法[4]、电沉积法[5]和化学气相沉积法[6]等。这些方法都有各自的     

分层吸声结构的声学设计与性能分析

本文给出了声波在多层介质中的传播方程，通过数值计算，分析了各层参数对分层吸声结构声学性能的影响规律。用参数匹配方法，对多层吸声结构各层材料的参数进行设计。结果表明，通过合理分布各层材料，多层吸声结构可以在较宽频段上达到满意的吸声性能。     

离子层气相反应法(ILGAR)制备CuInS2薄膜的研究

CuInS₂ thin films have been prepared by ion layer gas reaction (ILGAR) using C₂H₅OH as solvent, CuCl and InCl₃ as reagents and H₂S gas as sulfuration source. The effects of cationic concentrations and numbers of cycle on the properties of CuInS₂ film were investigated. The chemical composition, crystalline structure, surface topography, deposited rate, optical and electronic properties of the films were characterized by X-ray diffractrometry (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), ultraviolet-visible spectrometry (UV-Vis) and Hall System. The results show that the crystalline of CuInS₂ thin films and the deposition rate have been improved with the increase of cationic concentration, while CuxS segregation phases appear with further increasing cationic concentration. The deposition rate is close to constant as cationic concentration is fixed. CuInS₂ thin film derived form lower cationic concentration is uniform, compact and good in adhesion to the substrates. The absorption coefficient of CuInS₂ thin films is larger than 10⁴ cm^-1, and the band gap E_g is in the range of 1.30～1.40 eV. The dark resisitivity of the thin film decreases from 50 to 10 Ω·cm and the carrier concentration ranges are over 10¹⁶ cm^-3.     

用于精密测量玻尔兹曼常数的量子电压噪声源芯片研制

量子噪声温度计系统可通过比较导体中电子运动的热噪声和量子电压参考噪声精密测量玻尔兹曼常数,其中量子电压噪声源所合成的量子电压参考噪声由一组超导约瑟夫森结阵产生.本文详细介绍了基于Nb/Nb_xSi_(1-x)/Nb约瑟夫森结的量子电压噪声源芯片的设计、制备及测试;采用脉冲驱动模式,合成了具有量子精度的100 kHz交流量子电压信号.结果表明:本文所研制的噪声温度计核心芯片已具备了合成交流电压的功能,可为后续玻尔兹曼常数精密定值、重新定义及复现热力学温度研究提供核心器件.