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0引言Ⅰ-Ⅲ-Ⅵ2族半导体薄膜太阳能电池具有价格低廉、性能优良和工艺简单等优点,已成为最有希望的光电转换器件,是当前国际光伏电池研究领域的热点之一。在Ⅰ-Ⅲ-Ⅵ2族半导体中,CuInS2因其光学禁带宽度适中(1.50eV),可见光区域吸收系数较高(6×105cm-1),化学稳定性好等特点而成为人们最为关注的薄膜太阳能电池材料之一[1~5]。目前,CuInS2薄膜太阳能电池的最高转换效率约为11%[6,7],距理论转换效率(27%~32%)[8]还有很大的差距,而改善CuInS2薄膜质量是提高其光电转换效率的关键。研究表明,CuInS2薄膜的制备技术及工艺条件对薄膜的结构…  相似文献   
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CuInS2 thin films have been prepared by ion layer gas reaction (ILGAR) using C2H5OH as solvent, CuCl and InCl3 as reagents and H2S gas as sulfuration source. The effects of cationic concentrations and numbers of cycle on the properties of CuInS2 film were investigated. The chemical composition, crystalline structure, surface topography, deposited rate, optical and electronic properties of the films were characterized by X-ray diffractrometry (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), ultraviolet-visible spectrometry (UV-Vis) and Hall System. The results show that the crystalline of CuInS2 thin films and the deposition rate have been improved with the increase of cationic concentration, while CuxS segregation phases appear with further increasing cationic concentration. The deposition rate is close to constant as cationic concentration is fixed. CuInS2 thin film derived form lower cationic concentration is uniform, compact and good in adhesion to the substrates. The absorption coefficient of CuInS2 thin films is larger than 104 cm-1, and the band gap Eg is in the range of 1.30~1.40 eV. The dark resisitivity of the thin film decreases from 50 to 10 Ω·cm and the carrier concentration ranges are over 1016 cm-3.  相似文献   
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