钒掺杂纳米二氧化钛的制备及光催化活性研究

以钛酸四丁酯为钛前驱体,偏钒酸铵为掺杂离子给体.采用溶胶-凝胶法制备了V掺杂纳米二氧化钛粉体;并使用TGA-DSC、XRD、BET、SEM对其晶化温度与结构进行了表征.结果表明:V掺入促进锐钛矿相向金红石相转变、抑制晶粒长大、增大比表面积,纳米粉体颗粒呈分布较均匀的类球形晶粒.以亚甲基蓝为模型反应,考察了V掺杂量、煅烧温度对催化剂光催化性能的影响,结果表明:V掺杂的TiO2 粉体降解亚甲基蓝符合一级反应动力学规律;晶格中V4+能够作为电荷转移物种,有效的抑制光生电子与空穴的复合,增加了表面空穴浓度,提高TiO2 纳米粉体的光催化活性,当掺杂量为1.5 mol;,煅烧温度为450 ℃时,TiO2 具有最佳的光催化性能.     

氧分压对Ni/HfO_x/TiN阻变存储单元阻变特性的影响

采用射频磁控溅射的方法,基于不同氧分压制备的氧化铪构建了Ni/HfO_x/TiN结构阻变存储单元.研究发现,随着氧分压的增加,薄膜表面粗糙度略有降低;另一方面,阻变单元功耗降低,循环耐受性能可达10~3次,且转变电压分布的一致性得到改善.结合电流-电压曲线线性拟合结果及外加温度测试探究了器件的转变机理,得出在低阻态的传导机理为欧姆传导机理,在高阻态的传导机理为肖特基发射机理,并根据氧空位导电细丝理论,对高低阻态的阻变机理进行了详细的理论分析.     

数字微镜哈达玛光谱仪谱线弯曲的分析与修正

由于数字微镜（digital micro-mirror device, DMD)哈达玛变换光谱仪其成本低,光能利用率高及无运动部件等优势,逐渐成为光谱仪领域的研究重点。研制了一款基于DMD的哈达玛变换光谱仪。为了解决光谱仪谱线弯曲造成的光谱分辨率下降的问题,对基于DMD的哈达玛变换光谱仪中的谱线弯曲所引起的谱带混叠进行了分析。首先,导出了谱带混叠与谱线弯曲的关系式。然后,提出了两个过程来解决谱带混叠,一是通过调整DMD编码条纹,使DMD所编码的谱带最大限度地与标准谱带重合; 二是通过数据处理对谱带混叠进行修正。最后,通过对谱线曲率半径为5.8×104,7.8×104和9.7×104 μm等六种情况下谱带混叠进行了分析与修正,拟合出光谱混叠和修正效果与谱线曲率半径的关系。结果表明： 对于不同程度的谱线弯曲经过这两个过程修正后,分辨率都会改善到接近光学系统的分辨率, 说明这两个过程对修正谱线弯曲具有普适性、并且方法简单、有效。     

Reduction of Electron Leakage in a Deep Ultraviolet Nitride Laser Diode with a Double-Tapered Electron Blocking Layer

A double-tapered AlGaN electron blocking layer (EBL) is proposed to apply in a deep ultraviolet semiconductor laser diode. Compared with the inverse double-tapered EBL, the laser with the double-tapered EBL shows a higher slope efficiency, which indicates that effective enhancement in the transportation of electrons and holes is achieved. Particularly, comparisons among the double-tapered EBL, the inverse double-tapered EBL, the singletapered EBL and the inverse single-tapered EBL show that the double-tapered EBL has the best performance in terms of current leakage.     

第一性原理研究Be-S共掺杂AlN纳米片的电子结构和光学性质

基于密度泛函理论体系下广义梯度近似(GGA),利用第一性原理方法计算了Be替代Al、S替代N和Be-S共掺杂对氮化铝纳米片的电子结构和光学性质的影响.计算结果表明,掺杂改变了氮化铝纳米片的带隙,但仍显示半导体特性. Be掺杂类型对氮化铝纳米片的晶体结构影响不大,而S掺杂和Be-S共掺杂都使得氮化铝纳米片有不同程度的弯曲.同时Be-S共掺杂中S原子起到激活受主杂质Be原子的作用,使得受主能级向低能方向移动.共掺杂比单掺杂具有更高的受主原子浓度,并减小局域化程度.光学性质也发生较大改变:S原子掺杂氮化铝纳米片的介电函数虚部出现第二介电峰,Be掺杂和Be-S共掺杂使得损失谱的能量区间有所展宽,峰值降低并向高能区移动.     

Digital prototype of LLRF system for SSRF

This paper describes a field programming gate array (FPGA) based low level radio frequency (LLRF) prototype for the SSRF storage ring RF system. This prototype includes the local oscillator (LO), analog front end, digital front end, RF out, clock distributing, digital signal processing and communication functions. All feedback algorithms are performed in FPGA. The long term of the test prototype with high power shows that the variations of the RF amplitude and the phase in the accelerating cavity are less than 1% and 1° respectively, and the variation of the cavity resonance frequency is controlled within ±10 Hz.     

Impact on the magnetic compressor due to CSR

When an electron bunch is compressed in a chicane compressor, the CSR (coherent synchrotron radiation) will induce energy redistribution along the bunch. Such energy redistribution will affect the longitudinal emittance as a direct consequence. It will also excite betatron oscillation due to the chromatic transfer functions, and hence a transverse emittance change. So, it is indispensable for us to find a way to alleviate the CSR-caused emittance dilution and the bad result of chicane compressor in PKU-FEL.     

Charging dynamics of polymer due to electron irradiation: A simultaneous scattering-transport model and preliminary results

We present a novel numerical model and simulate preliminarily the charging process of polymer subjected to electron irradiation of several 10 keV. The model includes the simultaneous processes of electron scattering and ambipolar transport and the influence of a self-consistent electric field on the scattering distribution of electrons. The dynamic spatial distribution of charges is obtained and validated by existing experimental data. Our simulations show that excess negative charges are concentrated near the edge of the electron range. However, the formed region of high charge density may extend to the surface and bottom of a kapton sample, due to the effects of electric field on electron scattering and charge transport, respectively. Charge trapping is then demonstrated to significantly influence the charge motion. The charge distribution can be extended to the bottom as the trap density decreases. Charge accumulation is therefore balanced by the appearance and increase of leakage current. Accordingly, our model and numerical simulation provide a comprehensive insight into the charging dynamics of polymer irradiated by electrons in the complex space environment.     

Attacks and Improvement of Quantum Sealed-Bid Auction with EPR Pairs

Recently, an experimentally feasible three-party quantum sealed-bid auction protocol based on EPR pairs [Z.Y. Wang, Commun. Theor. Phys. 54 （2010） 997] was proposed. However, this study points out Wang＇s protocol cannot resist some internal bidders＇ attacks, such as the Twiee-CNOT attack, the collusion attack. A malicious bidder can launch the Twice-CNOT attack to obtain the other＇s bid, or the dishonest auctioneer may collude with one bidder and help him/her win the action by changing his/her bid. For preventing against these attacks, a simple solution by using the QKD-based message encryption and a post-confirmation mechanism by adopting the hash function are proposed.     

Analysis of resistive switching behaviors of vanadium oxide thin film

We demonstrated the polarization of resistive switching for Cu/VO_x/Cu memory cell. Switching behaviors of Cu/VO_x/Cu cell were tested by semiconductor device analyzer (Agilent B1500A), and the relative micro-analysis of I-V characteristics of VO_x/Cu was characterized by conductive atomic force microscope (CAFM). The I-V test results indicated that both forming and the reversible resistive switching between low resistance state (LRS) and high resistance state (HRS) can be observed under either positive or negative sweep. The CAFM images for LRS and HRS directly exhibited evidences of the formation and rupture of filaments based on positive or negative voltage. Cu/VO_x/Cu sandwiched structure exhibits a reversible resistive switching behavior and shows potential applications in the next generation nonvolatile memory field.