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31.
Two series of three dimensional(3D) lanthanide metal-organic frameworks(LnMOFs) of [Ln(tftpa)1.5(phen)(H2O)]n(Ln = Sm 1a, Eu 1b, Tb 1c, Dy 1d, H2tftpa = tetrafluoroterephthalic acid, phen = 1,10-phenanthrolin) and [Ln(tftpa)1.5(bpy)(H2O)]n(Ln = Sm 2a, Eu 2b, Tb 2c, Dy 2d, bpy = 2,2’-bipyridine) are obtained by structural regulation. Results reveal that the 3D LnMOFs show high water-and thermal-stability. Interestingly, through selecting the ... 相似文献
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Effect of Processing and Aging on Particle Size of Explosives 总被引:1,自引:0,他引:1
Influence of such processes as molding powder production, pel-lets pressing and aging under different condit/ons on particle size of TATB ( 1,3,S-trlamino-2,4,6-trinltrobenzene ) and HMX (cyclotetramethylenetetranitramine) was experimentally studied. The results showed that parflele size of these explosives was greatly changed before and airier moldinu powder produc-tion, but for different size grade of explosive this change was not the same; pressing process had also great effect on explosive particle size, but before and after ageing process explosive par-tide size did not change seriously. 相似文献
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This paper presents an extended gauge theory which can contain the Higgs mechanism, considering 4 field theory as an example. It can introduce interaction into different vacuum modular degeneracy states and break modular degeneracy. At the same time we can obtain both massless and massive vector bosons. According to the extended gauge theory, gauge transformations can be classified into two kinds: those with fixed parameter, called simply definite gauge transformations, which have a function of breaking modular degeneracy, and indefinite gauge transformations, which have a function of keeping phase degeneracy. 相似文献
36.
Determination of nine active components in Radix Hedysari and Radix Astragali using capillary HPLC with diode array detection and MS detection 总被引:1,自引:0,他引:1
A capillary HPLC (cHPLC) coupled with diode array detection (DAD) and MS method was developed for the simultaneously qualitative and quantitative determination of nine components, namely vanillic acid, calycosin-7-O-beta-D-glucoside, (6alphaR,11alphaR)-9,10-dimethoxypterocarpan-3-O-beta-D-glucoside, ononin, calycosin, (3R)-2'-hydroxy-3',4'-dimethoxyisoflavan-7-O-beta-D-glucoside, isoliquiritigenin, formononetin, (3R)-8,2'-dihydroxy-7,4'-dimethoxyisoflavan, in Radix Hedysari (Hongqi) and Radix Astragali (Huangqi). Simultaneous separation of these nine compounds was achieved on a Zorbax C18 microcolumn (5 microm, 150 x 0.3 mm). The mobile phase consisted of (A) 0.3% aqueous formic acid and (B) ACN with a gradient elution. The identification of nine compounds in both Hongqi and Huangqi was confirmed by TOF-MS. All calibration curves showed good linearity (R(2) >0.998) within test ranges. This method showed good repeatability for the quantification of these nine components in Hongqi and Huangqi with intra- and inter-day variations of less than 1.89 and 3.13%, respectively. The validated method was successfully applied to quantify nine investigated components in eighteen samples of Hongqi and Huangqi. Hierarchical cluster analysis of 18 samples was performed using the peak area of nine analytes on cHPLC chromatograms. The result showed that Hongqi and Huangqi are significantly different, though the two species of Astragalus are very similar. 相似文献
37.
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors 下载免费PDF全文
Rectangular Schottky drain AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate contact areas and conventional AlGaN/AlN/GaN HFETs as control were both fabricated with same size. It was found there is a significant difference between Schottky drain AlGaN/AlN/GaN HFETs and the control group both in drain series resistance and in two-dimensional electron gas (2DEG) electron mobility in the gate-drain channel. We attribute this to the different influence of Ohmic drain contacts and Schottky drain contacts on the strained AlGaN barrier layer. For conventional AlGaN/AlN/GaN HFETs, annealing drain Ohmic contacts gives rise to a strain variation in the AlGaN barrier layer between the gate contacts and the drain contacts, and results in strong polarization Coulomb field scattering in this region. In Schottky drain AlGaN/AlN/GaN HFETs, the strain in the AlGaN barrier layer is distributed more regularly. 相似文献
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Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes 下载免费PDF全文
Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) were fabricated,and the gate and the source of the HFETs consisted of AlGaN/AlN/GaN Schottky barrier diodes (SBDs).Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs,the series resistance under the Schottky contacts (RS) was calculated using the method of power consumption,which has been proved to be valid.Finally,the method of power consumption for calculating R S was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs.It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AlGaN/AlN/GaN SBDs and the AlGaN/AlN/GaN HFETs. 相似文献
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