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Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes
Authors:Cao Zhi-Fang  Lin Zhao-Jun  Lii Yuan-Jie Luan Chong-Biao  Yu Ying-Xia  Chen Hongand Wang Zhan-Guo
Institution:[1]School of Physics, Shandong University, Jinan 250100, China [2]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics Chinese Academy of Sciences, Beijing 100190, China [3]Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract:
Keywords:AlGaN/AlN/GaN heterostructures  Schottky barrier diodes  power consumption  seriesresistance
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