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A set of a-SiOx :H (0.52 <x<1.58) films are fabricated by plasma-enhanced-chemical-vapor-deposition (PECVD) method at the substrate temperature of 250℃. The microstructure andlocal bonding configurations of the films are investigated in detail using micro-Raman scattering,X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). It isfound that the films are structural inhomogeneous, with five phases of Si, Si2O:H, SiO:H, Si2O3:Hand SiO2 that coexist. The phase of Si is composed of nonhydrogenated amorphous silicon (a-Si)clusters that are spatially isolated. The average size of the clusters decreases with the increasingoxygen concentration x in the films. The results indicate that the structure of the present films canbe described by a multi-shell model, which suggests that a-Si cluster is surrounded in turn by thesubshells of Si2O:H, SiO:H, Si2O3:H, and SiO2. 相似文献
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Role of amorphous silicon domains of Er^3+ emission in the Er—doped hydrogenated amorphous silicon suboxide film 下载免费PDF全文
An investigation on the correlation between amorphous Si (a-Si) domains and Er^{3+} emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H) film is presented. On one hand, a-Si domains provide sufficient carriers for Er^{3+} carrier-mediated excitation which has been proved to be the highest excitation path for Er^{3+} ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiO_x) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er^{3+} ions. This study provides a better understanding of the role of a-Si domains on Er^{3+} emission in a-Si:O:H films. 相似文献
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以Raman散射、X射线电子能谱和红外吸收光谱细致研究了PECVD法250℃衬底温度下制备的氢化非晶硅氧(a-SiOx∶∶H)薄膜的微结构及键构型. 研究表明, 在0.52≤x≤1.58的氧含量范围内,a-SiOx∶∶H薄膜成分和结构不是均一的,依赖于局域键构型氧化程度的不同,大致存在着5种在一定程度上相互分离的结构组分,即Si, Si2O(∶H), SiO(∶H), Si2O3(∶H)和SiO2. 其中的Si相以非氢化的非晶硅(a-Si)颗粒形式存在,随氧含量x的增加其尺度持续减小但始终存在. 提出一种多壳层模型来描述a-SiOx∶H薄膜的结构,认为a-SiOx∶H薄膜中a-Si颗粒依次为Si2O(∶H), SiO(∶H), Si2O3(∶H)和SiO2壳层所包围. 随薄膜氧含量x的增加,各壳层厚度相应变化但各自的化学构成基本保持不变. 相似文献
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利用光致发光谱、X射线光电子谱和俄歇电子谱等技术研究了(NH_4)_2S_x和P_2S_5/(NH_4)_2S_5化学钝化GaAs(100)表面.结果表明,(NH_4)_2S_x中S钝化可以完全去除GaAs表面的氧化物.P_2S_5/(NH_4)_2S_x中P_2S_5对降低G_2A_5表面态密度,提高光致发光强度是有效的.钝化表面P氧化物存在对防止GaAs表面初期氧化起重要作用.
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21世纪的光学和光电子学讲座 第二讲 硅基发光材料和器件研究 总被引:2,自引:0,他引:2
硅基发光材料和器件是实现光电子集成的关键.文章评述了目前取得较大进展的几种主要硅基发光材料和器件的研究,包括掺饵硅,多孔硅,纳米硅以及Si/SiO2 等超晶格结构材料.展望了这些不同硅基发光材料作为发光器件和在光电集成中的发展前景 相似文献
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21世纪的光学和光电子讲座第二讲 硅基发光材料和器件研究 总被引:1,自引:1,他引:0
硅基发光材料和器件是实现光电子集成的关键。文章评述了目前取得较大进展的几种主要硅基发光材料和器件的研究,包括掺饵硅,多孔硅,纳米硅以及Si/SiO2等超晶格结构材料,展望了这些不同硅基发光材料作为发光器件和在光电集成中的发展前景。 相似文献