有机／聚合物电致发光器件中层间的能带匹配对器件发光性质的影响

对几种有机／聚合物电致发光材料的能带结构进行了表征，设计了几种结构的器件，并对它们进行了性质比较，结果表明，通过各种材料间合理的能带匹配，可以获得综合性能较好的电致发光器件。     

Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer

We employ photoluminescence (PL) and time-resolved PL to study exciton localization effect in InGaN epilayers.By measuring the exciton decay time as a function of the monitored emission energy at different temperatures,we have found unusual behaviour of the energy dependence in the PL decay process. At low temperature, the measured PL decay time increases with the emission energy. It decreases with the emission energy at 200K, and remains nearly constant at the intermediate temperature of 12OK. We have studied the dot size effect on the radiative recombination time by calculating the temperature dependence of the exciton recombination lifetime in quantum dots, and have found that the observed behaviour can be well correlated to the exciton localization in quantum dots. This suggestion is further supported by steady state PL results.     

Effects of AlN and AlGaN Interlayer on Properties of InAlN/GaN Heterostructures

InAlN/GaN heterojunction structures are grown on two-inch c-face（0001） sapphire substrates by metalorganic chemical vapour deposition. AlN and AlGaN interlayers are intentionally inserted into the structure to improve the electrical properties. The lowest sheet resistance of 359 Ω/sq and the highest room-temperature two-dimensional electron gas （2DEG） mobility of 1051 cm2 V-1s-1 is obtained in the structure with AlN thickness of 1.3 nm. The structure with AlN thickness of 2 nm exhibits the highest 2DEG concentration of 1.84×1013 cm-2. The sample with an AlGaN interlayer gives a smoother surface morphology compared to the one using an AlN interlayer, indicating potential applications of this technique in device fabrication.     

光晶格中双组分偶极玻色-爱因斯坦凝聚体的调制不稳定性

利用线性稳定性分析的方法,对光晶格中双组分偶极玻色-爱因斯坦凝聚体(Bose-Einstein condensates,简称BECs)的调制不稳定性进行了研究.得到了光晶格中双组分偶极BECs原子系统调制不稳定性区域的分布与在位相互作用和由偶极-偶极相互作用所导致的格点间BECs相互作用之间的关系.结果显示,格点间BECs的相互作用对光晶格中双组分偶极BECs的调制不稳定性有较大的影响,这可为实际应用中如何操控双组分偶极BECs提供有用的信息. 关键词： 光晶格 双组分玻色-爱因斯坦凝聚体 调制不稳定性 偶极-偶极相互作用     

Ultraviolet Phototransistors on AlGaN/GaN Heterostructures

We report on the fabrication and characterization of phototransistors based on AIGaN/GaN heterostructure grown over 6H-SiC substrates. The device has two functions： as a high electron mobility transistor （HEMT） and an ultraviolet photodetector at the same time. As an HEMT, its maximum transconductance is 170mS/ram, while the minimum cutoff frequency fT and the maximum oscillation frequency fm are 19 and 35 GHz, respectively. As a photodetector, the device is visible blind, with an ultraviolet/green contrast of three orders of magnitude, and a responsivity as high as 1700 A/W at the wavelength of 362nm.     

Weibull分布在新产品市场渗透研究中的应用拓展

在应用Weibull模型研究新产品市场渗透时,"永不采用人群"、消费者个体之间的差异、消费者群体之间的差异是研究新产品采用时需要考虑的三种因素。本文基于这三种因素分别建立了三个拓展的Weibull模型,并利用面板数据进行了实证研究,发现三种拓展之后的模型在数据拟合和数据预测方面均有显著的提高.然后,本文将三种因素整合至一个模型之中形成了一种新的综合Weibull模型,实证分析结果显示新的模型有很好的新产品市场渗透数据拟合和预测能力.     

低温GaN插入层对AlGaN/GaN二维电子气特性的改善

利用低压MOCVD技术在蓝宝石衬底上生长了AlGaN/GaN二维电子气(2DEG)材料,在GaN生长中插入一层低温GaN,并研究了低温GaN插入层对二维电子气输运特性的影响.使用原子力显微镜(AFM)和非接触霍尔测试仪测量了材料的表面形貌和电学特性,发现低温GaN插入层可以改善材料表面平整度并使AlGaN/GaN 2DEG的电子迁移率有明显提高,GaN插入层温度为860℃的样品在室温下2DEG的电子迁移率达到2110 cm2/V·s.     

复合材料旋转壳非线性稳定性分析计算

利用前屈曲一致理论和能量变分法分析计算了复合材料旋转壳非线性稳定性.前屈曲应变-位移关系采用非线性的卡门方程,能量积分采用数值积分,用势能最小原理求解前屈曲位移和内力,提出了求解临界载荷的实用计算方法,用FORTRAN语言编制了相应的计算机程序,并给出了算例.     

聚类分析在品牌市场定位研究中的应用

利用统计技术对顾客感知质量和感知价格进行市场定位可以解决品牌市场定位中存在的一些问题。文章利用系统和迭代聚类分析对中国耐用消费品进行了市场定位实证研究,利用方差分析和交叉列表分析检验聚类的有效性并获得聚类的特性,利用多重对应分析进一步研究类别特征。结果显示,聚类具有有效性,中国耐用消费品品牌定位呈现十字型。最后文章提出一种市场定位研究的组合统计技术。