Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors

An optimized micro-gated terahertz detector with novel triple resonant antenna is presented.The novel resonant antenna operates at room temperature and shows more than a 700% increase in photocurrent response compared to the conventional bowtie antenna.In finite-difference-time-domain simulations,we found the performance of the self-mixing GaN/AlGaN high electron mobility transistor detector is mainly dependent on the parameters L gs(the gap between the gate and the source/drain antenna) and L w(the gap between the source and drain antenna).With the improved triple resonant antenna,an optimized micrometer-sized AlGaN/GaN high electron mobility transistor detector can achieve a high responsivity of 9.45×102 V/W at a frequency of 903 GHz at room temperature.     

随机取向群聚椭球粒子光散射特性研究

利用离散偶极子近似方法,考虑单元粒子之间的电磁相互作用,数值计算了随机取向的不同尺度参数、不同纵横比的群聚椭球粒子的缪勒矩阵元素,给出了各个缪勒矩阵元素的角分布曲线,探讨了随机取向的群聚椭球粒子的尺度参数、纵横比、基本粒子相对位置对其缪勒矩阵元素的影响。并将随机取向群聚椭球粒子的光散射特性与单个等效球形粒子的数值结果进行了比较。结果表明,随机取向群聚椭球粒子的光散射特性与等效球形粒子的光散射特性存在很大差别,基本粒子的形状越偏离球形,这种差别就越大; 随机取向群聚椭球粒子中椭球粒子的纵横比和相对位置对整个群聚粒子的缪勒矩阵元素存在不同程度的影响,并且此影响随着粒子尺度参数的增大而变得更加显著。     

滤波器增强的高灵敏度室温HEMT太赫兹探测器

制备了一种集成有太赫兹低通滤波器的高速、高灵敏度GaN/AlGaN高电子迁移率晶体管(HEMT)太赫兹探测器。实验研究表明,当在太赫兹天线与引线电极之间加入低通滤波器时,太赫兹耦合天线的谐振性能恢复,室温下器件的响应度达到了1.05×10~3 V/W;测试带宽为1Hz时,器件的噪声等效功率达到了4.7×10~(-11) W。利用该探测器单元对不同材料进行了快速扫描成像,结果表明,该探测器单元具有较好的成像分辨率,且器件的响应速度优于商用的气动探测器的和热释电探测器的。     

LaFeO3修饰和O3处理对Au／Al2O3催化剂在CO氧化反应中热稳定性的影响

通过等体积浸渍法并分别经过H2和O3活化制备了系列1·1%Au/LaFeOx/Al2O3催化剂,考察了其在550℃经1·0%CO原料气处理后的CO氧化活性.Fe和La的引入虽然使1·1%Au/Al2O3的初始活性降低,但提高了其高温稳定性.在550℃经1·0%CO原料气预处理2h后,H2活化的1·1%Au/Al2O3在室温完全失活,而同样条件处理的1·1%Au/2%LaFeO3/Al2O3仍能将65%CO转化;这可能是由于LaFeO3以钙钛矿形式单层分散在Al2O3表面而导致的.O3活化能进一步提高催化剂的稳定性,在550℃经原料气预处理后,O3活化的1·1%Au/2%LaFeO3/Al2O3的活性高于1·1%Au/Al2O3和H2活化的1·1%Au/2%LaFeO3/Al2O3.1·0%CO原料气预处理10h后,H2活化的1·1%Au/2%LaFeO3/Al2O3完全失活,而O3活化的催化剂仍具有40%的转化率,这可能是由于O活化使得催化剂中存在部分氧化的金,增强了金属与载体间的相互作用.     

单电子晶体管电流解析模型及数值分析

本文首先建立单电子晶体管的电流解析模型, 然后将蒙特卡罗法与主方程法结合进行数值分析, 研究了栅极偏压、漏极偏压、温度与隧道结电阻等参数对器件特性的影响. 结果表明: 对于对称结, 库仑台阶随栅极偏压增大而漂移; 漏极电压增大, 库仑振荡振幅增强, 库仑阻塞则衰减; 温度升高将导致库仑台阶和库仑振荡现象消失. 对于非对称结, 源漏隧道结电阻比率增大, 库仑阻塞现象越明显. 关键词： 单电子晶体管 解析模型 蒙特卡罗法 主方程法     

Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas(2DEG)in AlGaN/GaN high electron mobility transistors(HEMTs).By introducing a drifted Fermi–Dirac distribution,we calculate the transport properties of the 2DEG in the AlGaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation.Then,the nonequilibrium Fermi–Dirac function is obtained by applying the calculated electron drift velocity and electron temperature.Under random phase approximation(RPA),the electric field driven plasmon dispersion is investigated.The calculated results indicate that the plasmon frequency is dominated by both the electric field and the angle between wavevector and electric field.Importantly,the plasmon frequency could be tuned by the applied source–drain bias voltage besides the gate voltage(change of the electron density).     

随机取向群聚椭球粒子光散射特性研究

利用离散偶极子近似方法,考虑单元粒子之间的电磁相互作用,数值计算了随机取向的不同尺度参数、不同纵横比的群聚椭球粒子的缪勒矩阵元素,给出了各个缪勒矩阵元素的角分布曲线,探讨了随机取向的群聚椭球粒子的尺度参数、纵横比、基本粒子相对位置对其缪勒矩阵元素的影响。并将随机取向群聚椭球粒子的光散射特性与单个等效球形粒子的数值结果进行了比较。结果表明,随机取向群聚椭球粒子的光散射特性与等效球形粒子的光散射特性存在很大差别,基本粒子的形状越偏离球形,这种差别就越大; 随机取向群聚椭球粒子中椭球粒子的纵横比和相对位置对整个群聚粒子的缪勒矩阵元素存在不同程度的影响,并且此影响随着粒子尺度参数的增大而变得更加显著。     

关于一道竞赛题的一些思考

对陕西省第七次大学生高等数学竞赛复赛中一道关于定积分上界的题目,给出其证明和几何解释,同时得到关于此竞赛题结论的加强与推广.     

三能级固体激光介质对抽运光吸收的理论研究

从激光介质中光能量的传输方程和描述脉冲激光的能级跃迁速率方程出发，研究了激光介质对抽运光的吸收特性.理论分析表明，固体激光介质对抽运光的吸收不仅是指数函数吸收方式，当抽运光的能量密度增大到一定程度时激光介质对抽运光的吸收变为非指数函数吸收，吸收深度增加.以红宝石晶体为例进行了具体的理论计算，结果显示出了随抽运光能量密度增大介质吸收的变化规律. 关键词： 抽运 激光介质 光传输方程 光吸收     

Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy

AlN/GaN resonant tunneling diodes (RTDs) were grown separately on freestanding GaN (FS-GaN) substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy (PA-MBE). Room temperature negative differential resistance (NDR) was obtained under forward bias for the RTDs grown on FS-GaN substrates, with the peak current densities (J_p) of 175-700 kA/cm² and peak-to-valley current ratios (PVCRs) of 1.01-1.21. Two resonant peaks were also observed for some RTDs at room temperature. The effects of two types of substrates on epitaxy quality and device performance of GaN-based RTDs were firstly investigated systematically, showing that lower dislocation densities, flatter surface morphology, and steeper heterogeneous interfaces were the key factors to achieving NDR for RTDs.