新药唑来膦酸钠的合成工艺改进

在离子液体{[bmin]BF4}中,以咪唑-1-基乙酸盐酸盐为原料,通过缩合和水解反应合成了新药唑来膦酸钠,总收率60.0%,纯度99.8%,其结构经1HNMR和IR表征。[bmin]BF4可回收套用。     

温度波动对LED显示屏白平衡主要参数及图像色调的影响

LED显示屏的图像显示质量一直是显示行业内重点关注的问题,而LED显示屏的白平衡参数决定了其复现和还原的显示图像的亮度和色调,是影响图像显示质量的重要因素。一般情况下,显示屏的白平衡由红、绿、蓝三基色的亮度配平比例确定,而且该配平比例相对稳定;但是对于LED的各个基色来说,环境因素的变化会引起基色参量的变化,从而导致显示屏白平衡的漂移,严重影响图像显示质量。本文基于色度学理论和LED显示特性,构建了特定LED显示颜色空间模型;并在设定颜色空间探究不同温度环境各个基色仅在亮度变化条件下对白平衡参数的影响,重点研究了在温度波动条件下白平衡的漂移规律以及显示图像产生的色调的畸变情况;通过归纳不同波动参数定量分析温度变化对LED显示屏白平衡主要参数的影响,为高清LED显示控制系统提供较有价值的图像修正理论依据,有助于提升高端LED显示产品的显示质量。     

平面型大光敏元InGaAs线列探测器及其应用

采用晶格匹配的平面型InP/In0.53Ga0.47As/InP外延材料,设计了一种大光敏元、带有保护环的InGaAs线列探测器。通过I-V测试、扫描电容显微技术(SCM)测试,研究并确定了线列器件的盲元与保护环结构之间的关系。通过设计改进,解决了器件的盲元问题。24×1 InGaAs线列短波红外探测在室温20 ℃、-10 mV偏压下,暗电流密度约5 nA/cm2。将光敏芯片密封在集成了热电制冷器(TEC)的金属管壳内,组件工作温度5 ℃,探测器响应光谱在1.0 μm~1.67 μm范围,平均峰值电流响应率为1.3 A/W,平均峰值探测率为3.4×1012 cm·Hz1/2/W,响应的非均匀性为1.5%。探测器经历一定条件的可靠性筛选试验后,性能未发生明显变化,并进行了航空机载成像应用,成像图片清晰。     

针剂中异物的光电检测方法研究

针剂在实际生产过程中容易混入异物颗粒,异物颗粒影响人体健康,因此针剂在出厂前必须进行异物检测.本文提出了一种基于光阻法的针剂异物的检测方法,介绍了检测原理及其信号处理方法,单瓶静态实验表明,该方法与人工检测方法比较,符合率为96.30%.针对检测区域和测试时间过小所造成的漏检可能,提出了双光路检测方法,并通过实验论证了其可行性.     

High-performance InAs/GaAs quantum dot laser with dot layers grown at 425℃

We investigate InAs/GaAs quantum dot(QD) lasers grown by gas source molecular beam epitaxy with different growth temperatures for InAs dot layers.The same laser structures are grown,but the growth temperatures of InAs dot layers are set as 425 and 500 ℃,respectively.Ridge waveguide laser diodes are fabricated,and the characteristics of the QD lasers are systematically studied.The laser diodes with QDs grown at 425℃ show better performance,such as threshold current density,output power,internal quantum efficiency,and characteristic temperature,than those with QDs grown at 500 C.This finding is ascribed to the higher QD density and more uniform size distribution of QDs achieved at 425℃.     

Finite-key analysis of practical time-bin high-dimensional quantum key distribution with afterpulse effect

High-dimensional quantum resources provide the ability to encode several bits of information on a single photon, which can particularly increase the secret key rate rate of quantum key distribution (QKD) systems. Recently, a practical four-dimensional QKD scheme based on time-bin quantum photonic state, only with two single-photon avalanche detectors as measurement setup, has been proven to have a superior performance than the qubit-based one. In this paper, we extend the results to our proposed eight-dimensional scheme. Then, we consider two main practical factors to improve its secret key bound. Concretely, we take the afterpulse effect into account and apply a finite-key analysis with the intensity fluctuations. Our secret bounds give consideration to both the intensity fluctuations and the afterpulse effect for the high-dimensional QKD systems. Numerical simulations show the bound of eight-dimensional QKD scheme is more robust to the intensity fluctuations but more sensitive to the afterpulse effect than the four-dimensional one.     

Time–energy high-dimensional one-side device-independent quantum key distribution

Compared with full device-independent quantum key distribution(DI-QKD), one-side device-independent QKD(1s DI-QKD) needs fewer requirements, which is much easier to meet. In this paper, by applying recently developed novel time–energy entropic uncertainty relations, we present a time–energy high-dimensional one-side device-independent quantum key distribution(HD-QKD) and provide the security proof against coherent attacks. Besides, we connect the security with the quantum steering. By numerical simulation, we obtain the secret key rate for Alice's different detection efficiencies. The results show that our protocol can performance much better than the original 1s DI-QKD. Furthermore, we clarify the relation among the secret key rate, Alice's detection efficiency, and the dispersion coefficient. Finally, we simply analyze its performance in the optical fiber channel.     

蠕变条件下刚性夹杂填充高聚物复合材料的延迟时间-蠕变荷载幂率关系研究

本文研发了不锈钢短纤维(SSFs)填充聚丙烯(PP)的新型高聚物复合材料,开展了在不同的蠕变荷载下材料的蠕变行为研究。实验证实,在相同的持载时间条件下,蠕变变形与蠕变载荷之间呈非线性关系,这个现象用传统的线性粘弹性理论难以解释。本文采用延迟时间与蠕变荷载相关的观点,对蠕变变形-蠕变载荷的非线性现象进行分析,发现了在对数坐标下延迟时间与蠕变载荷之间存在线性关系,从而得到了延迟时间与蠕变载荷之间的幂律关系。进一步的分析指出,蠕变载荷提升导致延迟时间增加的机理主要由材料体系的损伤所诱发。     

Reversible Carriers Tunnelling in Asymmetric Coupled InGaN/GaN Quantum Wells

Temperature-dependent photoluminescence （PL） and time resolved photoluminescence （TRPL） are performed to study the PL characteristics and carrier transfer mechanism in asymmetric coupled InGaN/GaN multiple quantum wells （AS-QWs）. Our results reveal that abnormal carrier tunnelling from the wide quantum well （WQW） to the narrow quantum well （NQW） is observed at temperature higher than about lOOK, while a normal carrier tunnelling from the NQW to the WQW is observed at temperature lower than 100 K. The reversible carrier tunnelling between the two Q Ws makes it possible to explore new types of temperature sensitive emission devices. It is shown that PL internal quantum efficiency （IQE） of the NQW is enhanced to about 46% due to the assistant of the abnormal carrier tunnelling.