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Reversible Carriers Tunnelling in Asymmetric Coupled InGaN/GaN Quantum Wells |
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| Authors: | PEI Xiao-Jiang GUO Li-Wei WANG Yang WANG Xiao-Hui JIA Hai-Qiang CHEN Hong ZHOU Jun-Ming WANG Li Tamai N |
| Affiliation: | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100190Department of Chemistry, School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan |
| Abstract: | Temperature-dependent photoluminescence (PL) and time resolved photoluminescence (TRPL) are performed to study the PL characteristics and carrier transfer mechanism in asymmetric coupled InGaN/GaN multiple quantum wells (AS-QWs). Our results reveal that abnormal carrier tunnelling from the wide quantum well (WQW) to the narrow quantum well (NQW) isobserved at temperature higher than about 100K, while a normal carrier tunnelling from the NQW to the WQW is observed at temperature lower than 100K. The reversible carrier tunnelling between the two QWs makes it possible to explore new types of temperature sensitive emission devices. It is shown that PL internal quantum efficiency (IQE) of the NQW is enhanced to about 46% due to the assistant of the abnormal carrier tunnelling. |
| Keywords: | 81 15 Gh 78 55 Cr 82 20 Xr |
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