磷化铟纳米晶的制备及光学性质研究

阐述了目前国内外的磷化铟纳米晶研究状况。用有机溶剂回流退火法制备出了磷化铟纳米晶，并通过XRD谱计算出平均粒径为55nm。喇曼光谱表明：由于纳米颗粒的量子尺寸效应, 2个散射峰都向低能量方向发生了较大的移动。UV VIS表明样品的吸收边相对于体块InP（970nm）发生了显著的蓝移，说明带隙变宽，表现出明显的量子尺寸效应。PLE谱在380nm时，PL谱峰在573nm时,相对于体块InP的红外区的荧光光谱发光峰发生了显著的蓝移，说明磷化铟纳米晶在光电子器件领域和非线性光学领域有非常好的应用前景。     

透射式碲铯(Cs2Te)光阴极厚度不均匀现象消除方法的研究

为解决透射式Cs₂Te光阴极厚度不均匀问题,通过理论和实验研究,分析了产生此问题的机理及其影响因素。这些因素包括：蒸发源发生器形状及其与阴极基底之间的相对位置;Cs/Te原子在阴极基底表面上完成化学反应所需的结合能以及制作阴极前基底表面所能达到的温度均匀性水平等。实验证明,上述最后一个因素是影响Cs₂Te光阴极厚度不均匀的主要原因。通过改变加温程序,优化保温时间,均衡阴极基底与阴极托盘温度梯度等途径,使得制作的透射式Cs₂Te光阴极厚度不均匀性由原来的76.4%,改善为＜10%。     

FTIR装置调Q开关性能参数及其测试的研究

本文分析了受抑全内反射(Frustrated total internal reflection)的理论基础,研究光线透射率、反射率相对于棱镜相对间隙d/λ之间的关系,建立了一套实验装置对其进行验证。     

基于帧频信号的图像存储时序控制方法

针对长时间服役光学设备图像存储系统性能退化和可靠性降低的问题,设计了新的图像存储系统结构。提出了一种基于帧频信号的时序控制方法,以帧频信号为基准驱动系统软硬件工作,结合秒信号、帧频信号与串口时间生成绝对时间,实现了四路独立数据流的同步采集,通过两级缓存机制保证数据采集-打包-存储之间的速率冗余匹配,对图像转移时间误差进行了修正。检测结果表明,系统时序得到了有效控制,长时间采集存储数据稳定可靠不丢帧,时间同步精度优于1ms。     

锌和微量营养素对儿童智能发展影响的研究

观察了锌和其他微量营养素对儿童智能发育的影响。将受试儿童随机分为三组：单纯补锌组（Ｚ）、同时补充锌＋微量营养素组（Ｚ＋Ｍ）、补充微量营养素组（Ｍ）。对上述三组儿童按随机双盲法进行补充实验，并于实验前后分别测试发锌值、智商及认识功能。结果表明，７０天实验结束后，Ｚ＋Ｍ组和Ｚ组发锌的增加值高于Ｍ组；与之相对应，Ｚ＋Ｍ组和Ｚ组智商（ＩＱ）及认识功能的改善均好于Ｍ组。可见，锌对儿童智能发展有重要作用。补充     

Third-Order Nonlinear Optical Susceptibility of Indium Phosphide Nanocrystals

InP nanocrystals synthesized by refluxing and annealing of organic solvent are determined from XRD measurements to have an averse granularity of 25 nm. The nonlinear optical properties of the InP nanocrystals studied by using laser Z-scan technique with 50 ps pulses at 532nm are found to reveal strong nonlinear optical properties and two-photon absorption phenomenon. Also, the nonlinear absorption coeffcient, the nonlinear refractive index and the third-order nonlinear optical susceptibility are determined by experiments, in which the nonlinear refractive index is three orders of magnitude larger than that of bulk InP.     

Asymmetric Reduction of Acetophenone O-Methyloxime with Reagents Prepared from L-Proline and Borane

Asymmetric reduction of acetophenone O-methyloxime with reagents in situ prepared from L-pronne and borane has been investigated. A series of conditions opfimiTation were made, including an examination of the effect of the temperature of ratalyst pretreatment, the temperature of reduction, the amount of borane, the additive, the solvent, the reducing agent and various chiral anxiHaries on the enanfioselecfivlty. Under the opti-mal condition, (S)-a-phenylethylamlne was obtained in 53% yield with 83.1% ee in the presence of 25 mol% L-proline.     

Designing high k dielectric films with LiPON—Al2O3 hybrid structure by atomic layer deposition

A large amount of ultra-low-power consumption electronic devices are urgently needed in the new era of the internet of things, which demand relatively low frequency response. Here, atomic layer deposition has been utilized to fabricate the ion polarization dielectric of the LiPON-Al₂O₃ hybrid structure. The LiPON thin film is periodically stacked in the Al₂O₃ matrix. This hybrid structure presents a frequency-dependent dielectric constant, of which k is significantly higher than the aluminum oxide matrix from 1 kHz to 200 kHz in frequency. The increased dielectric constant is attributed to the lithium ions shifting locally upon the applied electrical field, which shows an additional polarization to the Al₂O₃ matrix. This work provides a new strategy with promising potential to engineers for the dielectric constant of the gate oxide and sheds light on the application of electrolyte/dielectric hybrid structure in a variety of devices from capacitors to transistors.     

Synthesis and properties of La1-xSrxNiO3 and La1-xSrxNiO2

Superconductivity has been realized in films of La_1-xSr_xNiO₂. Here we report synthesis and characterization of polycrystalline samples of La_1-xSr_xNiO₃ and La_1-xSr_xNiO₂ (0 ≤ x ≤ 0.2). Magnetization and resistivity measurements reveal that La_1-xSr_xNiO₃ are paramagnetic metal and La_1-xSr_xNiO₂ exhibit an insulating behavior. Superconductivity is not detected in bulk samples of La_1-xSr_xNiO₂. The absence of superconductivity in bulk La_1-xSr_xNiO₂ may be due to the generation of hydroxide during reduction, a small amount of nickel impurity, or incomplete reduction of apical oxygen. The effect of interface in films of La_1-xSr_xNiO₂ may also play a role for superconductivity.     

Synthesis and Crystal Structure of [SmN（CH2COO）3（H2O）2].H2O

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