Analysis of the sensitivity to the electrochemical potential of the width of a metallic nanoconstriction

In relation to a metallic nanowire in the presence of an electrochemical potential, the sensitivity to this potential of the nanowire width is evaluated by defining and calculating a suitable parameter that can be regarded as a normalized gradient, this gradient being the derivative of the above-mentioned width with respect to the electrochemical potential.     

单晶ZnO、TiO_2纳米线拉伸力学特性的分子动力学研究

采用分子动力学方法,模拟了不同加载速度、不同温度下单晶ZnO、TiO_2纳米线的拉伸破坏过程.通过模拟结果,对比、分析了两种单晶金属氧化物纳米线拉伸力学特性的差异.研究表明,1)ZnO纳米线的断裂机制为:表面微裂纹-微孔-微裂纹与微孔贯穿-断裂,而TiO_2纳米线的断裂机制为:局部屈服-颈缩-断裂;2)TiO_2纳米线的承载能力优于ZnO纳米线,而承受变形的能力劣于ZnO纳米线;3)温度较低的情况下,纳米线的抗拉性能较好;加载速度越高,纳米线的抗载性能越好,而抗变形能力越差.     

III–V quantum devices and circuits based on nanoscale Schottky gate control of hexagonal quantum wire networks

The concept, the present status, key issues and future prospects of a novel hexagonal binary decision diagram (BDD) quantum circuit approach for III–V quantum large-scale integrated circuits (QLSIs) are presented and discussed. In this approach, the BDD logic circuits are implemented on III–V semiconductor-based hexagonal nanowire networks controlled by nanoscale Schottky gates. The hexagonal BDD QLSIs can operate at delay-power products near the quantum limit in the quantum regime as well as in the many-electron classical regime. To demonstrate the feasibility of the present approach, GaAs Schottky wrap gate (WPG)-based single-electron BDD node devices and their integrated circuits were fabricated and their proper operations were confirmed. Selectively grown InGaAs sub-10 nm quantum wires and their hexagonal networks have been investigated to form high-density hexagonal BDD QLSIs operating in the quantum regime at room temperature.     

Self‐Assembly of Ag6 Clusters into Nanowires for Nonenzymatic Electrochemical Sensing of Glucose

Self‐assembly of metal nanoclusters into 3D ordered superstructures and the exploration of their electrochemical properties are highly significant for fundamental research and practical application. In this study, atomically precise Ag₆(NALC)₅ nanoclusters are successfully synthesized and their structure is determined carefully. It is interesting that the prepared Ag₆(NALC)₅ nanoclusters can be self‐assembled into ultrafine nanowires, long ribbons, and finally 3D porous network in the mixed solution of water and ethanol, which can be attributed to the solvent polarity, static electricity interaction between ligands, and the possible Van der Waals attractions. Such assembly phenomenon lays a foundation for the future fabrication of silver clusters‐based nanodevices. In addition, the synthesized silver nanoclusters can be used for electrochemical sensing of glucose with high detection sensitivity, selectivity, and low limit of detection. This work is expected to be helpful for the synthesis of atomically precise metal nanoclusters and their applications in fabrication of nanodevices for chemical sensors.     

超导单光子探测器件直流特性研究

超导单光子探测技术是基于超薄超导薄膜的非平衡态热电子效应的一种新型的单光子探测方法。超导单光子探测器(SNSPD)的计数率可达到GHz,时间抖动小于100ps,因而在未来量子通信系统中有着广阔的应用前景。介绍了NbN超导单光子探测器件的工作原理和器件超导性能测试系统;测试了超导单光子探测器件的电阻-温度、电流-电压等特性。并对测试结果进行了分析和讨论。     

Growth of high-crystallinity uniform GaAs nanowire arrays by molecular beam epitaxy

The self-catalyzed growth of Ga As nanowires(NWs) on silicon(Si) is an effective way to achieve integration between group III–V elements and Si. High-crystallinity uniform Ga As NW arrays were grown by solid-source molecular beam epitaxy(MBE). In this paper, we describe systematic experiments which indicate that the substrate treatment is crucial to the highly crystalline and uniform growth of one-dimensional nanomaterials. The influence of natural oxidation time on the crystallinity and uniformity of Ga As NW arrays was investigated and is discussed in detail. The Ga As NW crystallinity and uniformity are maximized after 20 days of natural oxidation time. This work provides a new solution for producing high-crystallinity uniform III–V nanowire arrays on wafer-scale Si substrates. The highly crystalline uniform NW arrays are expected to be useful for NW-based optical interconnects and Si platform optoelectronic devices.     

In-plane oriented CH_3NH_3PbI_3 nanowire suppression of the interface electron transfer to PCBM

One-dimensional nanowire is an important candidate for lead-halide perovskite-based photonic detectors and solar cells. Its surface population, diameter, and growth direction, etc., are critical for device performance. In this research,we carried out a detailed study on electron transfer process at the interface of nanowire CH_3 NH_3 PbI_3(N-MAPbI_3)/Phenyl C61 butyric acid methyl-ester synonym(PCBM), as well as the interface of compact CH_3 NH_3 PbI_3(C-MAPbI_3)/PCBM by transient absorption spectroscopy. By comparing the carrier recombination dynamics of N-MAPbI_3, N-MAPbI_3/PCBM,C-MAPbI_3, and C-MAPbI_3/PCBM from picosecond(ps) to hundred nanosecond(ns) time scale, it is demonstrated that electron transfer at N-MAPbI_3/PCBM interface is less efficient than that at C-MAPbI_3/PCBM interface. In addition, electron transfer efficiency at C-MAPbI_3/PCBM interface was found to be excitation density-dependent, and it reduces with photo-generation carrier concentration increasing in a range from 1.0 × 1018 cm~(-3)–4.0 × 1018 cm~(-3). Hot electron transfer,which leads to acceleration of electron transfer between the interfaces, was also visualized as carrier concentration increases from 1.0 × 10~(18) cm~(-3)–2.2 × 10~(18) cm~(-3).     

从高质量半导体/超导体纳米线到马约拉纳零能模

作为马约拉纳费米子的“凝聚态版本”,马约拉纳零能模是当前凝聚态物理领域的研究热点.马约拉纳零能模满足非阿贝尔统计,可以构建受拓扑保护的量子比特.这种由空间上分离的马约拉纳零能模构建的拓扑量子比特不易受局域噪声的干扰,具有长的退相干时间,在容错量子计算中具有重要的应用前景.半导体/超导体纳米线是研究马约拉纳零能模和拓扑量子计算的理想实验平台.本文综述了高质量半导体纳米线外延生长、半导体/超导体异质结制备以及相应的马约拉纳零能模研究方面的进展,并对半导体/超导体纳米线在量子计算中的应用前景进行了展望.     

无机矿化剂辅助水热合成高长径比的α-Fe2O3多孔纳米线

本文以K₂SO₄为矿化剂,在100 ℃低温水热条件下,制备出大量形貌均一、高分散的直径约40 nm、长度为2~3 μm的α-FeOOH纳米线。该纳米线在300 ℃煅烧2 h后,得到一维形貌保持良好且表面具有多孔结构、长径比可达20的α-Fe₂O₃纳米线。通过XRD、FTIR、TG-DSC、HRTEM、SAED以及N₂物理吸附技术对产物的形貌和结构进行了表征。研究发现,无机盐对一维纳米线形貌的控制至关重要,还详细讨论了K₂SO₄在α-FeOOH纳米线的成核和生长过程中所起的作用。     

钼硫碘纳米线结构特性和化学改性的理论研究

 采用第一性原理密度泛函理论研究了纳米线结构的钼硫碘材料. 结构的理论模拟结果显示, 钼硫碘纳米线机械性能很高, 且其形变过程中显示出一种特殊的磁滞现象. 形成能、投影态密度以及电荷密度的计算结果显示, 使用电负性接近硫的碳元素可对钼硫碘纳米线化学改性同时不失去其良好的结构性能和电子性能. 该结果为化学改性钼硫碘纳米线材料应用于催化提供了依据. 这些钼硫碘纳米线材料将在纳米电子学、纳米机械学、催化、纳米限域等研究中有潜在应用.