矩形平底渠道淹没水跃区的水头损失

研究了矩形平底明渠淹没水跃区的水头损失。根据Rajaratnam对淹没水跃区的流速分布、壁面切应力、最大流速的试验成果和Verhoff附壁射流区断面流速分布的计算公式,应用紊流边界层理论研究了淹没水跃区的边界层发展和沿程水头损失的计算方法。根据动量方程和能量方程研究了淹没水跃区的跃前断面水深、总水头损失、局部水头损失、消能率的计算方法。给出了淹没水跃区最大流速、紊流边界层厚度、沿程水头损失、总水头损失、局部水头损失、局部阻力系数、消能率的计算方法。研究表明:淹没水跃区的总水头损失是跃前断面弗劳德数、跃前水深和淹没度的函数,沿程水头损失和局部水头损失与跃前断面流速、水深、水跃长度、跃前断面的特征雷诺数和消力池宽度有关。淹没水跃区的水头损失主要是局部水头损失,消能率随着弗劳德数的增加而增加。     

水流损失和热补偿共同作用对增强型地热系统(EGS)产能影响的研究

基于青海共和盆地-3705m地热田实测数据,结合流固耦合传热理论并运用Comsol软件,建立了离散型裂隙岩体流体传热模型。考虑水流损失和热补偿共同作用,模拟得到了开采过程中上、下岩层(盖层和垫层)为绝热不渗透、传热不渗透、渗透传热时,储层(上、下岩层和压裂层)温度场的变化特征,分析了产出流量、水流损失、产出温度、产热速率的变化规律。研究结果表明:采热过程中产出流量始终小于注入流量;产出流量增幅速率先增大后减小,最后趋于稳定,前3a产出流量增幅超过总增幅量的3/4;忽略水流损失,将高估产热速率,采热初期甚至达到考虑水流损失时产热速率的3倍以上;考虑水流损失,产热速率呈先快速上升再趋于稳定后逐渐下降的趋势,最优开采时间为3a^11a;研究上、下岩层对产出温度的影响,仅考虑传热,采热寿命延长5.43%,同时考虑渗流传热时,采热寿命延长2.71%;采热前9a,水流损失占主导作用,即流入上、下岩层水流损失对产热速率的影响高于热补偿效应,开采10a后,热补偿效应占主导作用;同时考虑水流损失和热补偿效应得到的产热速率变化规律与实际工程更为符合,建议选择低渗透能力的上、下岩层延长增强型地热系统(EGS)运行时间。     

私募反弹中收拾旧山河

随着市场反弹,私募业绩出现起色,少数优秀私募甚至已经借助今年以来的反律行情一举弥补了去年的损失。2012年,反弹成为市场关键词,截至3月14日,沪深300指数收于2605.11点,短短2个多月,A股已经迅速收复2011年部分失地。但与此同时,私募基金的反弹之路则走得有些崎岖。     

收入不平等与中国国民福利增长:模型、方法与数据——基于效用主义的一个研究

自改革开放以来,中国的收入不平等日益加剧;然而收入不平等造成的国民福利损失以及收入不平等加剧对国民福利增长的影响却一直未能得到很好的评估,由此导致的注重效率忽视公平的发展模式并不能带来国民福利增长的最大化。本文以效用主义为理论基础,通过构建一个包含基尼系数的国民福利函数,严格证明收入不平等的负福利效应,并进一步给出计算收入不平等的福利损失公式以及收入不平等变化对国民福利增长影响的公式。数据计算表明,1996-2010年我国居民收入不平等的平均福利损失率为8.08%,收入不平等的绝对福利损失增长了1.44倍;而基尼系数增大对国民福利增长的相对影响是(-)8.66%。因此,在发展经济的同时必须致力于缩小收入不平等,兼顾公平与效率,方可实现国民福利增长的最大化。     

平行风风速对腔体复合热损失特性影响的数值模拟

在恒热流边界条件和不同平行风风速下,考虑通过保温层和腔体壁面的导热热损失,采用三维数值模拟方法对一侧全开的圆柱形腔体复合对流和辐射热损失特性进行研究。结果表明:平行风下,腔体内的温度分布和开口面速度分布都与无风时存在很大差异;随着风速的增大,对流热损失平均努塞尔数Nu_c单调递增,而辐射热损失平均努塞尔数Nu_r并不单调递减,且风速越大,变化越不明显;随着腔体倾角的增大,同一风速下Nu_c和Nu_r并不像无风时那样单调变化。     

低能质子束在氢等离子体中的能损研究

实验测量了100 keV的质子束穿过部分电离氢等离子体靶后的能量损失. 等离子体靶由气体放电方式产生, 其自由电子密度在10¹⁶ cm^-3量级, 电子温度约1–2 eV, 维持时间在微秒量级. 研究结果表明: 质子束在等离子体靶中的能量损失与自由电子密度密切相关且明显大于在同密度条件下中性气体靶中的能量损失; 在自由电子密度达到峰值处, 通过实验结果计算得到此时的自由电子库仑对数约为10.8, 与理论计算结果符合较好, 该值比Bethe公式给出的中性气体靶中束缚电子库仑对数高4.3倍,相应的能损增强因子为2.9.     

一个分数阶忆阻器模型及其简单串联电路的特性

忆阻器是具有时间记忆特性的非线性电阻. 经典HP TiO₂忆阻器模型的忆阻值为此前通过忆阻器电流的时间积分, 即记忆没有损失. 而最近研究证实HP TiO₂ 线性忆阻器掺杂层厚度不能等于零或者器件整体厚度, 导致器件的记忆有损失. 基于此发现, 本文首先提出了一个阶数介于0 与1间的分数阶HP TiO₂ 线性忆阻器模型, 研究了当受到周期外激励时, 分数阶导数的阶数对其忆阻值动态范围和输出电压动态幅值的影响规律, 推导出了磁滞旁瓣面积的计算公式. 结果表明, 分数阶导数阶数对磁滞回线的形状及所围成区域面积有重要影响. 特别地, 在外激频率大于1时, 分数阶忆阻器的记忆强度达到最大. 然后讨论了此分数阶忆阻器与电容或电感串联组成的单口网络的伏安特性. 结果表明, 在周期激励驱动时, 随着分数阶导数阶数的变化, 此分数阶忆阻器与电容的串联电路呈现出纯电容电路与忆阻电路的转换, 而它与电感的串联电路则呈现出纯电感电路与忆阻电路的转换.     

PbTiO3/SrTiO3(010)异质界面上的周期性失配位错及电子富集

It is important to determine the effects of misfit dislocations and other defects on the domain structure, ferroelectricity, conductivity, and other physical properties of ferroelectric thin films to understand their ferroelectric and piezoelectric behaviors. Much attention has been given to ferroelectric PbTiO₃/SrTiO₃ or PbZr_0.2Ti_0.8O₃/SrTiO₃ heterointerfaces, at which improper ferroelectricity, a spin-polarized two-dimensional electron gas, and other physical phenomena have been found. However, those heterointerfaces were all (001) planes, and there has been no experimental studies on the growth of (010) PbTiO₃/SrTiO₃ heterointerface due to the 6.4% misfit between two materials. In this study, we selected an atomically flat (010) PbTiO₃/SrTiO₃ heterointerface grown using a two-step hydrothermal method as the research subject, and this is the first experimental report on that interface. Interfacial dislocations can play a significant role in causing dramatic changes in the Curie temperature and polarization distribution near the dislocation cores, especially when the size of a ferroelectric thin film is scaled down to the nanoscale. The results of previous studies on the effects of interfacial dislocations on the physical properties of ferroelectric thin films have been contradictory. Thus, this issue needs to be explored more deeply in the future. This study used aberration corrected scanning transmission electron microscopy (STEM) to study the atomic structure of a (010) PbTiO₃/SrTiO₃ heterointerface and found periodic misfit dislocations with a Burgers vector of a[001]. The extra planes at the dislocation cores could relieve the misfit strain between the two materials in the [001] direction and thus allowed the growth of such an atomically sharp heterointerface. Moreover, monochromated electron energy-loss spectroscopy with an atomic scale spatial resolution and high energy resolution was used to explore the charge distribution near the periodic misfit dislocation cores. The fine structure of the Ti L edge was quantitatively analyzed by linearly fitting the experimental spectra recorded at various locations near and at the misfit dislocation cores with the Ti³⁺ and Ti⁴⁺ reference spectra. Therefore, the accurate valence change of Ti could be determined, which corresponded to the charge distribution. The probable existence of an aggregation of electrons was found near the a[001] dislocation cores, and the density of the electrons calculated from the valence change was 0.26 electrons per unit cell. Based on an analysis of the fine structure of the oxygen K edge, it could be argued that the electrons aggregating at the dislocation cores came from the oxygen vacancies in the interior regions of the PbTiO₃. This aggregation of electrons will probably increase the electron conductivity along the dislocation line. The physics of two-dimensional charge distributions at oxide interfaces have been intensively studied, however, little attention had been given to the one-dimensional charge distribution. Therefore, the results of this study can stimulate research interest in exploring the influence of the interfacial dislocations on the physics of ferroelectric heterointerfaces.     

Theoretical studies on the structural, electronic, and optical properties of Ag2HgSnSe4

We investigate the electronic structure of Ag₂HgSnSe₄ in a wurtzite-stannite structure with the first principles method. This crystal is a direct band-gap compound. In addition the dielectric function, absorption coefficient, reflectivity, and energy-loss function are studied using the density functional theory in the generalized gradient approximation. We discuss the optical transitions between the valence bands and the conduction bands in the spectrum of the imaginary part of the dielectric function at length. We also find a very high absorption coefficient and a wide absorption band for this material. The prominent structures in the spectra of reflectivity and the energy-loss function are discussed in detail.     

桁架拱结构在地震动双向多点激励下的反应分析

基于经验相干损失函数和《建筑抗震设计规范》定义的反应谱模拟了空间变化地震动,进行了空间变化水平向和竖向地震动共同激励下桁架拱结构的反应分析。数值分析结果表明,与一致激励引起的结构反应相比,考虑地震动的空间变化增大了桁架拱结构的地震反应,引起地震动空间变化的每一个因素对于结构反应都有重要的影响。传统的基于一致地震动和仅考...