CsI(Tl)晶体探测器APD读出的温度效应

对中国科学院近代物理研究所自行生长的铊激活碘化铯闪烁晶体CsI(Tl)光输出及Hamamtsu公司生产的S8664-1010型雪崩光二极管(APD)增益对温度的依赖关系做了系统研究. 结果表明, CsI(Tl)晶体光产额在室温范围内随着温度的增加而增加, 在－2℃—8℃温度范围内的平均温度系数为0.67%/℃, 在8℃—25℃温度范围内的平均温度系数为0.33%/℃. 而对所使用的APD, 其增益在室温范围内的温度系数为－3.68%℃(工作电压400V). APD结合CsI(Tl)晶体在室温下对¹³⁷Cs的662keV γ射线的能量分辨可达5.1%.     

Single-Photon Detection at Telecom Wavelengths

A single-photon detector based on an InGaAs avalanche photodiode has been developed for use at telecom wavelengths. A suitable delay and sampling gate modulation circuit are used to prevent positive and negative transient pulses from influencing the detection of true photon induced avalanches. A monostable trigger circuit eliminates the influence of avalanche peak jitter, and a dead time modulation feedback control circuit decreases the afterpulsing. From performance tests we lind that at the optimum operation point, the quantum efficiency is 12% and the dark count rate 1.5 × 10^-6 ns^-1, with a detection rate of 500 kHz.     

A Bidirectional, Diode-Pumped, Passively Mode-Locked Nd：YVO4 Ring Laser with a Low-Temperature-Grown Semiconductor Saturable Absorber Mirror

We report the operation of a bidirectional picosecond pulsed ring Nd：YVO4 laser based on a low-temperaturegrown semiconductor saturable absorber mirror. Except for the laser crystal, the six-mirror ring laser cavity has no intra-cavity elements such as focusing lens or mirror. The bidirectional mode locked pluses are obtained at the repetition rate of 117.5 MHz, pulse duration of 81 ps, power of 2 × 200 mW.     

Transient and Stationary Simulations for a Quantum Hydrodynamic Model

The transient and stationary characteristics of a one-dimensional quantum hydrodynamic model are comparatively studied for semiconductor charge transport in a resonant tunnelling diode. When the bias is not small, our numerical results show a deviation of the asymptotic transient solutions from the stationary ones. A dynamic instability accounts for such deviation. The stationary quantum hydrodynamic model is therefore unsuitable in general for simulating quantum devices.     

Low Timing Jitter and Tunable Dual-Wavelength Picosecond Pulse Generation from a Fabry--Pérot Laser Diode with External Injection

A novel scheme to generate tunable dual-wavelength optical pulses with low timing jitter at arbitrary repetition rates is proposed and demonstrated experimentally. The pulses are generated from a gain-switched Fabry-Pérot laser diode with two external cw beams for injection seeding simultaneously. The cw light is generated by two independent distributed feedback laser diodes, and their wavelengths can be tuned independently by two temperature controllers. The dual-wavelength pulses with the pulse width of 57 ps, the timing jitter of 340 fs, are obtained. The sidemode-suppression ratio of the output pulses is better than 23dB over a 10-nm wavelength tuning range.     

Dynamics of Efficiency Change by Temperature in Diode Pumped Nd：YAG Heat Capacity Laser

We investigate the influence of temperature on the efficiency of diode pumped Nd：YAG heat capacity laser is studied. It is shown that the efficiency of such a laser system is greatly reduced at higher temperature. This bad behaviour is mainly caused by the doped-ion redistribution among various Stark levels of the ground state, and by a thermal equilibrium between the upper laser level and the pump level. Meanwhile, the thermal excitations from the ground state to the lower laser level also play a role. We derive a model to describe those effects, with the considerations of emission spectrum of laser diodes, the subtle Stark structures and the linewidth of absorption and of simulated-emission.     

Thermal Performance of Laser Diode Array under Constant Convective Heat Transfer Boundary Condition

Three-dimensional heat transfer model of laser diode array under constant convective heat transfer coefficient boundary condition is established and analytical temperature profiles within its heat sink are obtained by separation of variables. The influences on thermal resistance and maximum temperature variation among emitters from heat sink structure parameters and convective heat transfer coefficient are brought forward. The derived formula enables the thermal optimization of laser diode array.     

A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor

With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-Migned large-area multi-finger configuration power SiGe heterojunction bipolar transistor （HBT） device （with an emitter area of about 880μm^2） is fabricated with 2μm double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVcEo is 10 V and the collector-base junction breakdown voltage BVcBo is 16 V with collector doping concentration of 1 × 10^17 cm^-3 and thickness of 400nm. The device exhibited a maximum oscillation frequency fmax of 35.5 GHz and a cut-off frequency fT of 24.9 GHz at a dc bias point of Ic = 70 mA and the voltage between collector and emitter is VCE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from OdBm to 21 dBm. A maximum output power of 29.9dBm （about 977mW） is obtained at an input power of 18.SdBm with a gain of 11.47dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, fmax and fT are improved by about 83.9% and 38.3%, respectively.     

Extended Measurement of the v2 (1- ←0+) Band of H3O+ by Mid-Infrared Diode Laser Spectroscopy

Twenty-five new R-branch lines of the v2（1^-← 0^＋） band of H3O^＋ are measured using diode laser velocity modulation spectroscopy between 1070 and 1230 cm^-1. The H3O^＋ ions are produced in a high voltage ac discharge with water diluted in helium. The observed lines together with all the previously published measurements are fit to the standard vibration-rotational Hamiltonian of an oblate symmetric top, yielding a set of improved molecular constants. All the sextic centrifugal distortion constants for both 0^＋ and 1^- states are determined precisely. The observed R（13, 0） transition is shifted about -0.129 cm^-1 from its calculated value, indicating that a near degeneracy exists between the （13, 0）^＋ and （13, 3）^- ground-state rotation-inversion levels.     

Diode End-Pumped Passively Q-Switched Nd^3＋：GdVO4 Self-Raman Laser at 1176 nm

A compact diode-end-pumped passively Q-switched Nd^3＋ ：GdVO4/C^r4＋ ：YAG self-Raman laser at 1176 nm is demonstrated. When the To = 80% Cr^4＋：YAG saturable absorber is inserted into the cavity, the maximum Rtaman laser output reaches 175 mW with 3.8 W incident pump power. The optical conversion from incident to the Raman laser is 4.6% and the slope efficiency is 6.5%. The pulse energy, duration, and repetition frequency of the first stokes laser are 4.5μJ, 1.8 ns, and 38.5 kHz, respectively. There is strong blue emission （about 350- 400nm） can be observed in the Nd^3＋ ：GdVO4 crystal when the process of stimulated Raman scattering occurs, which is induced by the upconversion of the Nd^3＋ ions.