Opening Band Gap of Graphene by Chemical Doping: a First Principles Study

Single atom chemically doped graphene has been theoretically studied by density functional theory. The largest band gap, 0.62 eV, appears in arsenic atom doped graphene, then 0.60 eV comes by the tin atom, whose deformations can neither be ignored. It is also found that oxygen and iron single atom embedded graphene can open band gap by 0.52 and 0.54 eV, respectively. Moreover, doping O atom shows little distortion and high stability by charge redistribution. The band gap of Fe doped graphene is opened by orbital hybridization. The other heteroatom doped results are a little inferior to them.     

The electronic band structure analysis of OLED device by means of in situ LEIPS and UPS combined with GCIB

Low-energy inverse photoelectron spectroscopy (LEIPS) and ultraviolet photoelectron spectroscopy (UPS) incorporated into the multitechnique XPS system were used to probe the ionization potential and the electron affinity of organic materials, respectively. By utilizing gas cluster ion beam (GCIB), in situ analyses and depth profiling of LEIPS and UPS were also demonstrated. The band structures of the 10-nm-thick buckminsterfullerene (C₆₀) thin film on Au (100 nm)/indium tin oxide (100 nm)/glass substrate were successfully evaluated in depth direction.     

Surface effect on band structure of magneto-elastic phononic crystal nanoplates subject to magnetic and stress loadings

This paper presents a theoretical model for the size-dependent band structure of magneto-elastic phononic crystal(PC) nanoplates according to the Kirchhoff plate theory and Gurtin-Murdoch theory, in which the surface effect and magneto-elastic coupling are considered. By introducing the nonlinear coupling constitutive relation of magnetostrictive materials, Terfenol-D/epoxy PC nanoplates are carried out as an example to investigate the dependence of the band structure on the surface effect, magn...     

The influence of the band structure of epitaxial graphene on SiC on the transistor characteristics

We fabricated high-mobility field-effect transistors based on epitaxial graphene synthesized by vacuum graphitization of both the Si- and C-faces of SiC. Room-temperature field-effect mobilities >4000 cm²/V s for both electrons and holes were achieved, although with wide distributions. By using a high-k gate dielectric, we were able to measure the transistor characteristics in a wide carrier density range, where the mobility is seen to decrease as the carrier density increases. We formulate a simple semiclassical model of electrical transport in graphene, and explain the sublinear dependence of conductivity on carrier density from the view point of the few-layer graphene energy band structure. Our analysis reveals important differences between the few-layer graphene energy dispersions on the SiC Si- and C-faces, providing the first evidence based on electrical device characteristics for the theoretically proposed energy dispersion difference between graphene synthesized on these two faces of SiC.     

Multiscale Approach to the Study of the Electronic Properties of Two Thiophene Curcuminoid Molecules

We studied the electronic and conductance properties of two thiophene–curcuminoid molecules, 2‐thphCCM ( 1 ) and 3‐thphCCM ( 2 ), in which the only structural difference is the position of the sulfur atoms in the thiophene terminal groups. We used electrochemical techniques as well as UV/Vis absorption studies to obtain the values of the HOMO–LUMO band gap energies, showing that molecule 1 has lower values than 2 . Theoretical calculations show the same trend. Self‐assembled monolayers (SAMs) of these molecules were studied by using electrochemistry, showing that the interaction with gold reduces drastically the HOMO–LUMO gap in both molecules to almost the same value. Single‐molecule conductance measurements show that molecule 2 has two different conductance values, whereas molecule 1 exhibits only one. Based on theoretical calculations, we conclude that the lowest conductance value, similar in both molecules, corresponds to a van der Waals interaction between the thiophene ring and the electrodes. The one order of magnitude higher conductance value for molecule 2 corresponds to a coordinate (dative covalent) interaction between the sulfur atoms and the gold electrodes.     

Position calculation of the frequency band gap in the finite photonic crystal with multiple alternations using boundary element method

In this paper, the wave transmission from finite photonic crystals with multiple alternations is investigated using boundary element method (BEM). Since that, in these structures the alternation is not in all directions of space; the investigations of the frequency band gap with desired accuracy are not practical by analytical methods. Also, the frequency dispersion of dielectric rods is an effective parameter in photonic crystals, which this effect in our calculations has been considered. Due to the high capabilities of the BEM, the transmitted wave spectrum in the photonic crystal is calculated by changing the geometrical and optical parameters of the photonic crystal and applying more alternation in its structure and the position and width of the frequency band gap is investigated. Then, it is assumed that the photonic crystal with an arbitrary angle is rotated around the axis which is perpendicular on the crystal cross section and then, it is irradiated with a plan wave. The band gap of the photonic crystals with the desired structure, desired rotation angle and multiple alternations have been solved. Very low information volume, high speed and accuracy during the calculation and useable for any desired structures are the characteristics of this method.     

Correlation between thermal conductivity and bond length alternation in carbon nanotubes: A combined reverse nonequilibrium molecular dynamics—Crystal orbital analysis

The thermal conductivity (λ) of carbon nanotubes (CNTs) with chirality indices (5,0), (10,0), (5,5), and (10,10) has been studied by reverse nonequilibrium molecular dynamics (RNEMD) simulations as a function of different bond length alternation patterns (Δr_i). The Δr_i dependence of the bond force constant (k_rx) in the molecular dynamics force field has been modeled with the help of an electronic band structure approach. These calculations show that the Δr_i dependence of k_rx in tubes with not too small a diameter can be mapped by a simple linear bond length–bond order correlation. A bond length alternation with an overall reduction in the length of the nanotube causes an enhancement of λ, whereas an alternation scheme leading to an elongation of the tube is coupled to a decrease of the thermal conductivity. This effect is more pronounced in carbon nanotubes with larger diameters. The formation of a polyene‐like structure in the direction of the longitudinal axis has a negligible influence on λ. A comparative analysis of the RNEMD and crystal orbital results indicates that Δr_i‐dependent modifications of λ and the electrical conductivity are uncorrelated. This behavior is in‐line with a heat transfer that is not carried by electrons. Modifications of λ as a function of the bond alternation in the (10,10) nanotube are explained with the help of power spectra, which provide access to the density of vibrational states. We have suggested longitudinal low‐energy modes in the spectra that might be responsible for the Δr_i dependence of λ. © 2010 Wiley Periodicals, Inc. J Comput Chem, 2010     

Particle-number-conserving analysis of multiquasiparticle bands in ~(177)Lu

The experimental one-, three-, and five-quasiparticle bands in ~(177)Lu are analyzed by the particle-number conserving (PNC) method for treating the cranked shell model with pairing interaction, in which the blocking effects are taken into account exactly. The experimental moments of inertia are reproduced very well by PNC calculations with us free parameter.     

单晶金刚石p型和n型掺杂的研究

超宽禁带半导体材料金刚石在热导率、载流子迁移率和击穿场强等方面表现出优异的性质,在功率电子学领域具有广阔的应用前景。实现p型和n型导电是制备金刚石半导体器件的基础要求,其中p型金刚石的发展较为成熟,主流的掺杂元素是硼,但在高掺杂时存在空穴迁移率迅速下降的问题;n型金刚石目前主流的掺杂元素是磷,还存在杂质能级深、电离能较大的问题,以及掺杂之后金刚石晶体中的缺陷造成载流子浓度和迁移率都比较低,电阻率难以达到器件的要求。因此制备高质量的p型和n型金刚石成为研究者关注的焦点。本文主要介绍金刚石独特的物理性质,概述化学气相沉积法和离子注入法实现金刚石掺杂的基本原理和参数指标,进而回顾两种方法进行单晶金刚石薄膜p型和n型掺杂的研究进展,系统总结了其面临的问题并对未来方向进行了展望。     

Influence of pressure on the relative population of the two lowest vibrational levels of the C <Superscript>3</Superscript> Π<Subscript>u</Subscript> state of nitrogen for electron beam excitation

Continuous and pulsed 12 keV electron beams were used to excite nitrogen within a gas cell at pressures ranging from 10 to 1400 hPa. The pressure dependence of the ratio of photon fluxes for emission from vibrational levels v'=0 and 1 of the C ³Π _u state has been studied. The results confirm the presence of a collisional excitation mechanism populating v'=0, 1 in addition to electron impact excitation. Rate constants of (1.27 ±0.04)×10^-11 cm³s^-1 [ v'=0] and (2.68 ±0.08)×10^-11 cm³s^-1 [ v'=1] were measured for C ³Π _u quenching by ground state nitrogen. For electron beam conditions relative excitation efficiencies of 1:0.59:0.22 for vibrational levels 0, 1 and 2 were calculated. The recorded flux ratios are compared with the predictions given by a vibrational relaxation model.