The electronic band structure analysis of OLED device by means of in situ LEIPS and UPS combined with GCIB |
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| Authors: | Masahiro Terashima Takuya Miyayama Tetsuro Shirao Hin Wai Mo Yasuhiro Hatae Hiroshi Fujimoto Katsumi Watanabe |
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| Institution: | 1. ULVAC-PHI, Inc., Analytical Laboratory, Chigasaki, Japan;2. i3-opera, Fukuoka, Japan |
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| Abstract: | Low-energy inverse photoelectron spectroscopy (LEIPS) and ultraviolet photoelectron spectroscopy (UPS) incorporated into the multitechnique XPS system were used to probe the ionization potential and the electron affinity of organic materials, respectively. By utilizing gas cluster ion beam (GCIB), in situ analyses and depth profiling of LEIPS and UPS were also demonstrated. The band structures of the 10-nm-thick buckminsterfullerene (C60) thin film on Au (100 nm)/indium tin oxide (100 nm)/glass substrate were successfully evaluated in depth direction. |
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| Keywords: | electronic band structure GCIB depth profile LEIPS–UPS OLED device |
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