Performance evaluation of ZnGeP2 optical parametric oscillator pumped by a Q-switched Tm,Ho:GdVO4 laser

A doubly resonant ZnGeP2 （ZGP） optical parametric oscillator （OPO） pumped by a novel Tm,Ho：GdVO4 laser was demonstrated. Cryogenic Tin（5 at.-%）, Ho（0.5 at.-%）：GdVO4 laser with high pulse repetition frequency （PRF） of 10 kHz at 2.05 μm was employed as pumping source of ZGP OPO. The 15-mm-long ZGP crystal, 55° cut for I-type phase-matching with low absorption coefficient less than 0.05 cm^-1 at 2 μm, was placed in a piano-piano cavity with resonator length of 30 mm. The ZGP OPO generated a total combined output power of 1.2 W at 3.75 and 4.52 μm under pumping power of 5.3 W, corresponding to slope efficiency of 40% from incident 2μm laser power to midinfrared （Mid-IR） output. A widely tunable range from 3.0 to 6.5 μm was achieved by changing the crystal angle only 3.5°.     

Relativistic Configuration Interaction Treatment of Generalized Oscillator Strength for Krypton

A fully relativistic configuration interaction method is developed to investigate the transition energies and general oscillator strengths of the lower lying states of krypton, for both optically allowed and optically forbidden transitions. The calculated results are in agreement with the recent experimental measurements. The calculated transition energies for the 5s and 5s＇ transitions are 9.970 and 10. 717eV, which agree with the experimental data of 10.033 and 10.643 eV. The calculated oscillator strengths are 0.211 and 0. 170, comparable with the experimental results 0.214（±0.012） and 0.194 （±0.012）, respectively. The momentum transfer positions （K^2 in a.u.） of the minimum and maximum GOSs in the 4s^24p^6 → 4s^24p^5 （5s ＋ 5s＇） transitions are 1.105 and 2.225, comparable with the measurements results 1.24 and 2.97 [Phys. Rev. A 67 （2003） 062708].     

Li2B4O7晶体在SAW技术中的应用研究

采用CZ法生长了30×30mm3的Li2B4O7单晶体.对晶体的压电性能进行了研究,弹性系数的交叉分量少,数值相对较小;在(001)面内有较高的声波传播速度,其变化范围为6500～7080m/s,在[001]方向有较低的声波传播速度,大约为5160m/s;而压电性能表明在不同方向的机电耦合系数均比石英晶体相应参数大得多.对晶体谐振器和压控震荡器的性能进行了研究,发现其机电耦合系数近似石英的十倍,很适合用来制作宽频器件.晶体谐振器的频率温度特性为抛物线型,其转变温度在室温,在-10℃～55℃温度范围内频率变化为3×10-4,具有良好的频谱响应,其寄生频率高出主振180kHz,衰减大于30dB,完全能满足器件使用要求.晶体滤波器3dB带宽的相对宽为1;,而石英仅为0.4;.