基于鸟枪法脂质组学研究环氧酶-2抑制剂对关节炎模型血清脂代谢的干预作用

心血管疾病(CVD)是类风湿关节炎(RA)患者死亡的重要原因之一,脂代谢紊乱与CVD发生有密切关联,因而有必要对RA和药物治疗导致的脂代谢改变进行探讨。该研究采用胶原诱导法(CIA)构建关节炎模型,引入多维质谱鸟枪法开展血清脂质分析,检测了血清中105种脂质分子,发现模型大鼠体内7种磷脂酰肌醇、15种鞘磷脂、5种神经酰胺、10种磷脂酰胆碱和2种溶血磷脂酰胆碱异常上调,环氧酶-2(COX-2)抑制剂可部分修复紊乱的脂代谢,但对5种磷脂酰胆碱和1种溶血磷脂酰胆碱具有异常调控作用。该研究从脂质分子水平探讨了RA及COX-2抑制剂对脂代谢的干预作用,可以为RA的心血管风险研究提供信息。     

100-nm T-gate InAIAs/InGaAs InP-based HEMTs with fT= 249 GHz and fmax ： 415 GHz

InA1As/InGaAs high electron mobility transistors （HEMTs） on an InP substrate with well-balanced cutoff frequency fT and maximum oscillation frequency frnax are reported. An InA1As/InGaAs HEMT with 100-nm gate length and gate width of 2 × 50 μm shows excellent DC characteristics, including full channel current of 724 mA/mm, extrinsic maximum transconductance gm.max of 1051 mS/mm, and drain-gate breakdown voltage BVDG of 5.92 V. In addition, this device exhibits fT = 249 GHz and fmax = 415 GHz. These results were obtained by fabricating an asymmetrically recessed gate and minimizing the parasitic resistances. The specific Ohmic contact resistance was reduced to 0.031 0.mm. Moreover, the fT obtained in this work is the highest ever reported in 100-nm gate length InA1As/InGaAs InP-based HEMTs. The outstanding gm.max, fT, fmax, and good BVDG make the device suitable for applications in low noise amplifiers, power amplifiers, and high speed circuits.     

红外迷彩用中低发射率Al/Bi2O3复合粒子的制备及性能研究

以片状铝粉、硝酸铋(Bi(NO3)3.5H2O)为主要原料,通过共沉淀法将Bi2O3复合于片状金属铝粉表面,获得了包覆效果良好的Al/Bi2O3复合粒子。为了保证复合粒子的红外隐身性能,利用SEM、XRD、IR对复合粒子形貌、物相组成等进行了表征,并采用红外发射率仪测试了复合粒子的红外辐射率。结果表明,在共沉淀反应温度50℃,反应时间2 h,前驱体煅烧温度为450℃时,所制得的复合粒子为黄色粉体,红外发射率为0.73,Bi2O3包覆在Al的表面使得复合粒子呈现黄色,从而避免Al粉的"显形"和氧化,为红外迷彩隐身提供了一种优良材料。