数据插值对正电子发射断层成像设备的图像重建影响的研究

正电子发射断层扫描(positron emission computed tomography, PET)是核医学领域最先进的临床检查影像技术. PET技术是目前临床上用于诊断和指导治疗肿瘤的最佳手段之一. 正电子发射断层成像设备探测器采集到的数据需要进行数据处理, 把原始数据转换成正弦图形式的数据才能用于图像重建. 平行束断层重建和扇形束图像重建是图像重建的两种方法, 分别对应平行束和扇形束形式的数据处理方法. 对原始数据的操作不可避免地破坏了原始数据的完整性. 现今, 正电子发射断层设备在重建过程中普遍采用平行束重建的方法. 平行束的数据分离会对PET数据进行插值操作, 扇形束的数据分离不会对PET数据进行插值操作. 本文通过对比平行束图像重建和扇形束图像重建结果, 研究了数据插值对PET图像重建结果的影响. 关键词： 正电子发射计算机断层扫描 数据插值 图像重建 原始数据     

氮分子B3Πg激发态的光谱研究

在较低气压(4Torr)条件下采用直流辉光放电激发氮分子气体,得到了氮分子放电等离子体在320～470nm范围内的发射谱,其形状为一等间隔的谱线序列,并沿长波方向谱线强度逐渐变小。通过计算分析对谱线进行了标定,确定该组谱线是由处于C^3Πg激发态低振动能级的氮分子向B^3Πg态不同振动能级的辐射跃迁所产生;在此基础上计算出氮分子B^3Πg态的振动频率为1738．50cm^-1。结合相关的能级参数计算了C^3Πg(v=0)→B^3Πg(v″=0～5)之间的Frank-Condon跃迁因子,实验所得的谱线强度与之符合得很好。     

不同增感对AgCl乳剂中光电子时间行为的影响

借助微波吸收介电谱检测技术,对AgCl立方体乳剂中光电子的时间行为进行了检测,同时获得了自由光电子与浅束缚光电子在不同增感条件下的时间分辨谱。实验结果表明：化学增感时由于硫加金增感中心的浅电子陷阱作用有效地抑制了空穴与光电子之间的复合,化学增感使得光电子的衰减相对未增感的减缓、衰减时间得到延长;光谱增感时由于染料J聚集体增加了卤化银晶体中添隙银离子的浓度、促进了光电子与添隙银离子之间的结合,光谱增感使得光电子的衰减相对未增感的加剧、衰减时间变短;化学与光谱共同增感使光电子的衰减时间在光谱增感的基础上得到了延长,且硫加金化学增感中心的浅电子陷阱效应在光谱增感的基础上更明显。     

掺杂的AgCl微晶在化学增感条件下的光电子衰减特性

利用微波吸收介电谱技术研究了K₄Fe(CN)₆浅电子陷阱掺杂剂和S+Au增感剂对立方体AgCl微晶光生电子衰减时间分辨特性的影响。结果表明,掺杂浓度为10-8～10-7 mol·mol-1Ag时,在增感之前,掺杂位置越接近表面时,光电子衰减过程会变慢,即衰减时间增加;S+Au增感后的掺杂乳剂中光电子衰减变快,说明了增感中心起深电子陷阱作用,当掺杂位置接近表面90%Ag时,光电子衰减时间突然减小,说明表面掺杂中心和增感中心可能发生了某些反应。     

染料增感AgBr乳剂的光电子衰减动力学研究

本工作利用微波吸收薄膜介电谱测量技术,测量了菁染料光谱增感后的AgBr晶体乳剂在脉冲激光曝光后产生的光电子衰减时间特性,分析了不同类型的染料及其增感条件对材料光电子时间特性的影响关系.通过比较增感后的T 颗粒乳剂和立方体乳剂的光电子衰减特性,实验验证了吸附在T 颗粒(111)晶面上的染料比吸附在立方体(100)晶面上的染料更有效、更有助于形成潜影的论据.     

The influence of K4Fe（CN）6 on the photosensitivity of cubic AgCl microcrystal

The influence of K4Fe(CN)6 at various doping concentrations on the photosensitivity of cubic AgC1 microcrysgals has been investigated by using the microwave absorption and phase-sensitive measurement technique. The time behaviour of free photoelectrons in AgCl microcrystals is analysed by using computer simulation as a function of three parameters of shallow electron trap (SET) including doping concentration, trap depth and capture cross-section (CCS).It is found that the three parameters of SET play different roles on the free photoelectron decay time (FDT). After considering the threshold effects of the three parameters and their collective effects, the trap depth value, the CCS value,and the optimal doping concentration of the SET introduced by the dopant K4Fe(CN)6 in cubic AgCl microcrystals can also be determined, and the best photosensitivity of cubic AgCl can be obtained.     

Eu、Mg共掺ZnO薄膜的微观结构与光致发光性能研究

采用射频磁控溅射技术,以不同Eu、Mg掺杂比的ZnO/MgO/Eu2O3陶瓷靶材,制备了Eu、Mg共掺的ZnO薄膜(ZMEO).通过X射线衍射(XRD)、Raman散射及光致发光(PL)技术研究了Eu、Mg掺杂比对ZMEO薄膜微观结构和光致发光性能的影响.结果表明:所制备的ZMEO薄膜皆为六角纤锌矿型结构.适当的Eu、Mg掺杂比不但有利于ZnO晶粒的生长,而且可以引入缺陷俘获导带电子,促进ZnO和Eu3+之间的能量传递,使Eu3+的红光发射强度获得提升.     

The influence of trapping centres on the photoelectron decay in silver halide

Photoelectron is the foundation of latent image formation, the decay process of photoelectrons is influenced by all kinds of trapping centres in silver halide. By analysing the mechanism of latent image formation it is found that electron trap, hole trap, and one kind of recombination centre where free electron and trapped hole recombine are the main trapping centres in silver halide. Different trapping centres have different influences on the photoelectron behaviour. The effects of all kinds of typical trapping centres on the decay of photoelectrons are systematically investigated by solving the photoelectron decay kinetic equations. The results are in agreement with those obtained in the microwave absorption dielectric spectrum experiment.     

Characteristics of Photoelectron Decay of Silver Halide Microcrystal Illuminated by a Short Pulse Laser

A YAG supershort pulse laser (355nm,35ps) is used as an exposure source and the microwave dielectric spectri, technique is used to quickly detect the photoelectron decay process in AgX microcrystals,because the free photoelectron lifetime and decay process can decide the sensitivity and other efficiencies of silver halide material.The result shows that the free photoelectron average lifetimes of Kodak-100 and Fuji-100 colour film samples are 8.5 and 9.5 ns,respectively.     

Photoluminescence Mechanism of ZnO：Zn Investigated by Microwave Dielectric Spectrometry

We investigate the decay process of photoelectrons from a luminescent material of ZnO:Zn using a microwave dielectric spectrometry. Electrons in the conduction band are found to decay exponentially and the lifetime is 781 ns, while the time interval of decay from the maximum to half of this value is 470ns. ZnO:Zn is a green luminescent material at its central wavelength of 510 nm. Compared to the decay of electrons in the conduction band, the decay process of the luminescence is faster, and the time interval of decay from the maximum to half of the maximum is about 100 ns. We believe that the mechanism of the ZnO:Zn visible luminescence is recombination luminescence, and find that our theoretical simulation is in agreement with the experimental results.