Integrated a-Si：B Microbolometer Arrays Based on Improved Porous Silicon Micromachining Techniques

A monolithic uncooled 8 × 8 microbolometer array with is presented. The a-Si：B film was deposited by plasma boron-doped a-Si （a-Si：B） thermistors as active elements enhanced chemical vapour deposition. To decrease the thermal conductance of the microbolometer, a-Si：B thermistor was formed on a four-leg suspended microbridge. The improved porous silicon micromachining techniques described here enable the integration of the sensor array with the metal oxide-semiconductor readout circuitry. The sacrificial material of porous silicon is prepared in the first step. It is then well protected all the time during the fabrication of metal-oxide-semiconductor field effect transistors and microbolometers before being released. Measurements and calculations show that the uncorrected uniformity of the 8 × 8 microbolometer array is about 4.5%, and the detectivity of 2.17 × 10^8 cm Hz^1/^2W^-1 is achieved at a chopping frequency of 30 Hz and a bias voltage of 5 V with a thermal response time of 12.4 ms.     

用于"芯片实验室"的静电机制微液滴控制芯片的研制

提出了一种结构简单、可编程控制的离散液滴控制芯片。它以硅为衬底,重掺杂多晶硅为微电极阵列,氧化硅为介质层,碳氟聚合物薄膜为疏水层。它克服了传统连续流传输、混合的局限性及层流条件的限制,通过控制施加在微电极阵列上的电压脉冲时序,成功实现了对离散液滴的快速传输和混合。在30 V驱动电压下,约0.9μL去离子水液滴传输速度可达24 mm/s;在40 V驱动电压下,约0.8μL去离子水液滴和约1.4μL的0.0001 mol/L Rhodam ine液滴在7/30 s内完成了快速混合。另外,还提出利用提高液滴速度及来回晃动混合后的液滴等几种加强混合方法。     

Ti薄膜与AlN陶瓷的界面反应

用X射线衍射分析、二次离子质谱、卢瑟福背散射谱、俄歇电子能谱等表面分析技术，研究了Ti膜与AlN陶瓷衬底的界面固相反应-在高真空中用电子束蒸发的方法在抛光的200℃ AlN陶瓷衬底上淀积200nm的Ti膜，并在真空恒温炉中退火-实验表明，退火中Ti膜与AlN界面发生了扩散与反应-650℃，1h退火已观测到明显的界面反应-界面反应产物主要是钛铝化物及Ti-N化合物-铝化物是Ti-Al二元化合物和Ti-Al-N三元化合物，850℃，4h退火后则主要由Ti₂AlN组成- 关键词：