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The effect of single A1GaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates 下载免费PDF全文
High-quality and nearly crack-free GaN epitaxial layer was obtained
by inserting a single AlGaN interlayer between GaN epilayer and
high-temperature AlN buffer layer on Si (111) substrate by
metalorganic chemical vapor deposition. This paper investigates the
effect of AlGaN interlayer on the structural properties of the
resulting GaN epilayer. It confirms from the optical microscopy and
Raman scattering spectroscopy that the AlGaN interlayer has a
remarkable effect on introducing relative compressive strain to the
top GaN layer and preventing the formation of cracks. X-ray
diffraction and transmission electron microscopy analysis reveal
that a significant reduction in both screw and edge threading
dislocations is achieved in GaN epilayer by the insertion of AlGaN
interlayer. The process of threading dislocation reduction in both
AlGaN interlayer and GaN epilayer is demonstrated. 相似文献
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使用RKE模型和RSM模型对某旋流燃烧器进行3D冷态湍流流动模拟计算,并从精度、计算量和收敛性3个方面对两个模型进行了比较。通过与PIV所测得的出口冷态流场对比表明,两个模型均可以较准确地预测燃烧器出口的宏观流场、径向速度和轴向速度分布。相比较而言,RSM模型在预报流场速度峰值的位置、回流区的大小、主流射流宽度等方面比RKE模型更准确一些,在收敛性上RSM模型也占优,而在计算量上,RSM模型略大一些,但对反应流计算,两个模型计算量基本一致。研究表明在模拟旋流燃烧器流场时RSM模型具有一定的优越性,建议优先考虑。 相似文献
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