Influence of ignition condition on the growth of silicon thin films using plasma enhanced chemical vapour deposition

The influences of the plasma ignition condition in plasma enhanced chemical vapour deposition (PECVD) on the interfaces and the microstructures of hydrogenated microcrystalline Si (μc-Si:H) thin films are investigated. The plasma ignition condition is modified by varying the ratio of SiH₄ to H₂ (R_H). For plasma ignited with a constant gas ratio, the time-resolved optical emission spectroscopy presents a low value of the emission intensity ratio of Hα to SiH^* (I_Hα/I_SiH^*) at the initial stage, which leads to a thick amorphous incubation layer. For the ignition condition with a profiling R_H, the higher I_Hα/I_SiH^* values are realized. By optimizing the R_H modulation, a uniform crystallinity along the growth direction and a denser μ c-Si:H film can be obtained. However, an excessively high I_Hα/I_SiH^* may damage the interface properties, which is indicated by capacitance-voltage (C-V) measurements. Well controlling the ignition condition is critically important for the applications of Si thin films.     

1.3微米发光自组织InAs/GaAs量子点的电致发光研究

用优化的MBE参数生长了1.3μm发光的InAs/GaAs量子点材料,并制成发光二极管,对不同温度和有源区长度下样品的电致发光谱进行了细致的研究.观察到两个明显的电致发光峰,分别对应于量子点基态和激发态的辐射复合发光.实验表明,由于能态填充效应的影响,适当增大量子点发光器件有源区长度,更有利于获得基态的光发射.这个结果提供了一种控制和调节InAs/GaAs量子点发光二极管和激光器的工作波长的方法.     

电弧分区特征对金刚石形核的影响

在直流电弧等离子体喷射CVD法制备金刚石膜中,电弧可分为弧心、弧干、弧边三个区域.本文主要阐述了电弧的分区特征,讨论电弧区域特征对金刚石形核的影响.同时,以电弧分区特征为基础,探讨了预处理方式和温度对金刚石形核的关联影响.结果表明:形核初期对应于TiC粉的Raman谱,衬底的钛过渡层表面形成了TiC的过渡层,弧心区域金刚石形核迅速,形核密度较高,而在弧边区域金刚石形核缓慢,形核密度相对较低.     

新型Ni/TiO_2催化剂用于对硝基苯酚催化加氢

以介孔氧化钛晶须为载体,采用等体积浸渍法制备了Ni/TiO2催化剂,通过扫描电镜、X射线衍射、N2吸附脱附、热重分析和程序升温还原技术对催化剂及其前驱体进行了表征,考察了催化剂中Ni含量及焙烧和还原温度对催化剂催化对硝基苯酚加氢反应性能的影响.结果表明,Ni/TiO2催化剂不仅具有晶须状形貌和高结晶度的锐钛晶型,还保持了高比表面积和介孔结构.随着Ni/TiO2催化剂中镍负载量的增加,对硝基苯酚转化率逐渐增加,当镍负载量超过10%时,催化剂活性和选择性没有明显变化.当镍负载量为10%,焙烧和还原温度分别为500和450 ℃时,Ni/TiO2催化剂的加氢活性最佳,是Raney Ni的4倍.该催化剂循环使用7次后未发现明显失活.     

Population inversion study of GaAs/AlGaAs three-quantum-well quantum cascade structures

A population inversion study of GaAs/AlxGa1-x As three-quantum-well quantum cascade structures is presented. We derive the population inversion condition (PIC) of the active region (AR) and discuss the PICs on different structures by changing structural parameters such as the widths of quantum wells or barriers in the AR. For some instances, the PIC can be simplified and is proportional to the spontaneous emission lifetime between the second and the first excited states, whereas some other instances imply that the PIC is proportional to the state lifetime of the second excited state.     

Surface Carbonization of GaN and the Related Structure Evolution during the Annealing Process

To explain the stabilization mechanism of the carbon-ion-implanted GaN under the diamond growth environment,the luminescence characteristics and structure evolution correlative with sites' carbon atoms located for highfluence carbon-ion-implanted Ga N are discussed. GaN is implanted with carbon ion using fluence of 2×10~(17) cm~(-2) and energy of 45 keV. Then the implanted samples are annealed at 800℃ for 20 min and 1 h under the N_2 atmosphere. The luminescence characteristics of carbon-ion-implanted GaN are evaluated by photoluminescence spectrum at wavelength 325 nm. The lattice damage of Ga N is characterized by Raman spectrum and the corresponding vacancy-defect evolution before and after annealing is measured by slow positron annihilation. The results show that most of the carbon atoms will be located at the interstitial sites after carbon ion implantation due to the weak mobility. As the implanted samples are annealed, strong yellow luminescence is emitted and the vacancies for Ga(V_(Ga)) are reduced resulting from the migration of interstitial carbon(C_i) and formation of complexes(CGaand/or C_(Ga)-C_i) between them. As the annealing time is prolonged, the carbon ions accommodated by the vacancies are saturated, vacancy clusters with carbon atoms appear and the concentration of C_(Ga) diminishes, which will have an adverse effect on the diamond film nucleation and growth.     

实验技术共焦扫描光声层析成像技术的研究

报道了一种新的光声层析成像技术--光声傅里叶变换共焦扫描成像技术.并用该技术获得了强散射物质(生物组织)的层析图像,纵向分辨能力小于0.1mm,横向分辨率小于4mm.     

复数图形选择题

备选答案: (A)直线(B)椭圆(C)双曲线(D)圆(E)抛物线(F)线段的垂直平分线。 1.设复数“满呢条件: J二+zJ之·J:一}2二l, 2.设复数z满足条件: !:+5!一1:一5!二s; 3.设复数:满足条件: !二+31!+1一3f{闷o, 4.设复数:满足条件: !:“4一2不}二}二+3一5讨;5.设复数:满足条件,!二+3一石}匕幻6.设复数:满足条件:,.1:一}2+}:+1}“这;7.设复数二满足条件:}二乞{“9.1.(A),5.(D)梦3二(B),4.(F),了。(D)。 .。.幼自内h︸复数图形选择题@刘金龙!江西九江 ~~…     

椭圆曲线签名方案

将椭圆曲线密码系统（ECC）与ElGamal系统进行了比较，在保证签名算法安全性的前提下，对ECC签名方案中的求逆运算和消息恢复问题进行了优化，针对这两个问题分别构造了新的签名方案，通过理论证明和编程模拟实验，解决了ECC签名方案中存在的需要求逆运算和不能实现消息恢复的问题，大大地简化了运算的复杂程度。