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121.
The (0001) surface of highly oriented pyrolytic graphite is studied by scanning force microscopy in both contact and dynamic mode. Low temperatures were necessary for the dynamic mode measurements in order to achieve the required signal to noise ratio. At 22 K, atomic scale structures with 2.46 Å periodicity and trigonal symmetry of the individual maxima were obtained in both modes. Since graphite exhibits a van der Waals surface in good approximation, this result shows that comparatively weak forces of van der Waals type are sufficient for successful imaging in the dynamic mode on the atomic scale. However, since the positions of the observed maxima correspond to the ones found by scanning tunneling microscopy and contact scanning force microscopy, but not to the positions of the carbon atoms, it also opens new questions on the imaging mechanism in the dynamic mode. 相似文献
122.
用含时黄金规则波包法计算了HeIClvan der Waals络合物分子的振动了解寿命和离解碎片ICl的终转动态分布。并与实验和其他理论计算帮了比较。波包计算所用的总传播时间实际上是解离碎片在振动退激发绝热势能面上的滞留时间。终态相互作用对终转动态分布起着决定性作用。并预言了HeICl终转动态分布对振动态的依赖。 相似文献
123.
Francisco Torrens Jos SnchezMarín Ignacio NebotGil 《Journal of computational chemistry》2001,22(5):477-487
A method for the computation of a dimension index D is implemented in program TOPO and applied to calculate the solvent‐accessible surfaces of molecules. Our algorithm distinguishes external from internal atoms, and uses such a feature to give two fractal‐like dimension indices, D and D′. The D′−D difference is a sensitive method to elucidate the occurrence of atoms that are hidden to solvents. For molecules with buried atoms this difference is great (e.g., faujasite). The procedure is compared with the GEPOL code, which provides high‐quality results. TOPO systematic error can be easily corrected by simple addition of a small constant value (0.011). Correlation models between indices D and D′, globularity, rugosity, dipole moment and other properties make clear the existence of a homogeneous molecular structure in each series. Additional applications are the extrapolation of D to infinite polymers, the variation of the D with generations of dendrimers and a revision of D for lysozyme. © 2001 John Wiley & Sons, Inc. J Comput Chem 22: 477–487, 2001 相似文献
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Zhuo-Min Chen Tahir ain William A. Goddard 《Journal of computational chemistry》1997,18(11):1365-1370
This work considers ways to increase calculation speed for Ewald crystal summations in cases where standard combination rules do not apply. This also increases speed of free-energy perturbation theory calculations. © 1997 by John Wiley & Sons, Inc. J Comput Chem 18 : 1365–1370, 1997 相似文献
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Van der Waals magnetic materials are promising candidates for spintronics and testbeds for exotic magnetic phenomena in low dimensions. The two-dimensional (2D) limit in these materials is typically reached by mechanically breaking the van der Waals interactions between layers. Alternative approaches to producing large amounts of flakes rely on wet methods such as liquid-phase exfoliation (LPE). Here, we report an optimized route for obtaining monolayers of magnetic cylindrite by LPE. We show that the selection of exfoliation times is the determining factor in producing a statistically significant amount of monolayers while keeping relatively big flake areas (~1 µm2). We show that the cylindrite lattice is preserved in the flakes after LPE. To study the electron transport properties, we have fabricated field-effect transistors based on LPE cylindrite. Flakes are deterministically positioned between nanoscale electrodes by dielectrophoresis. We show that dielectrophoresis can selectively move the larger flakes into the devices. Cylindrite nanoscale flakes present a p-doped semiconducting behaviour, in agreement with the mechanically exfoliated counterparts. Alternating current (AC) admittance spectroscopy sheds light on the role played by potential barriers between different flakes in terms of electron transport properties. The present large-scale exfoliation and device fabrication strategy can be extrapolated to other families of magnetic materials. 相似文献
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The 3D periodic graphene/h-BN(G/BN) heterostuctures were studied. The stacking forms between the graphene and h-BN layers were discussed. The varieties of the geometric and electronic configurations at the interface between graphene and h-BN layers were also reported. The metal-semiconductor transform of the G/BN material can be achieved by adjusting the stacking form of the h-BN layers or changing the proportion of graphene layers in the unit cell. An electrostatic potential well was found at the interface. Due to the potential well and the only dispersion correlation at the interface, the dielectric constant εzz in vertical direction was independent on the variety of the thickness or the proportion of the compositions in an unit cell. 相似文献
130.