Ultraviolet light absorber with low surface energy: synthesis and characterization

Novel fluorine-containing ultraviolet absorbers (FBPs) with low surface energy were successfully synthesized based on 2,4-dihydroxy benzophenone (BP-1), and their structures were characterized by ¹H NMR, ¹³C NMR, FTIR, and HRMS. UV absorption of FBPs was studied in 10⁻⁴ M dichloromethane (CH₂Cl₂), which demonstrated the superior UV absorption capability of FBPs (ca. ?=1.7×10⁴ to 2.2×10⁴ at λ_max) over the matrix (?=1.7×10⁴ at λ_max). Quantum chemistry calculation was performed to investigate the stable structure and UV electronic absorption bands of FBPs. The surface chemistry information of high-chlorinated polyethylene (HCPE) coating films embedded with ultraviolet absorbers (UVAs) was given by X-ray photoelectron spectroscopy (XPS) and contact angle measurement. The results show that the surface enrichment capability of FBPs is remarkably better than traditional UVAs (including BP-1, BP-3, BP-12) because of the low surface energy properties of FBPs.     

有机半导体非平衡态HOMO和LUMO能量位移规律与OLED中“热激子”形成的唯象理解

以能斯特方程为基础, 通过分析电流密度与氧化还原物种活度变化, 即载流子浓度变化的关系, 计算出有机半导体材料电极电势的变化, 从而建立起有机半导体前线轨道, 即最高占据分子轨道(HOMO)能级和最低未被占据分子轨道(LUMO)能级相对于热力学平衡态的能量位移随电流密度变化的数学关系. 进而依据能级能量位移引起的能隙变化, 提出了有机电致发光显示器（OLED）中“热激子”的产生机制.     

太阳能光催化分解水制氢※

利用太阳能光催化分解水制氢是解决能源环境问题并实现太阳能有效转化和储存最有前途的技术之一, 这一“圣杯”式反应经过几十年不懈努力取得了诸多重要研究进展. 本文将综述光催化分解水制氢体系的基本概念、活性测试方法与注意事项、光催化材料种类等; 并从光催化分解水制氢的光吸收、光生电荷分离和表面催化反应等基本过程和关键科学问题的角度总结其重要研究进展, 最后对于太阳能光催化分解水制氢的挑战和潜在的发展方向进行分析和展望. 希望通过本综述的简要介绍能让刚从事光催化分解水制氢研究的青年科技人员清晰地了解掌握该领域的一些基本概念、操作规范、研究总体进展和现状等.     

Temperature and Composition Dependent Optical Properties of CdSe/CdS Dot/Rod-Based Aerogel Networks

Employing nanocrystals (NCs) as building blocks of porous aerogel network structures allows the conversion of NC materials into macroscopic solid structures while conserving their unique nanoscopic properties. Understanding the interplay of the network formation and its influence on these properties like size-dependent emission is a key to apply techniques for the fabrication of novel nanocrystal aerogels. In this work, CdSe/CdS dot/rod NCs possessing two different CdSe core sizes were synthesized and converted into porous aerogel network structures. Temperature-dependent steady-state and time-resolved photoluminescence measurements were performed to expand the understanding of the optical and electronic properties of these network structures generated from these two different building blocks and correlate their optical with the structural properties. These investigations reveal the influence of network formation and aerogel production on the network-forming nanocrystals. Based on the two investigated NC building blocks and their aerogel networks, mixed network structures with various ratios of the two building blocks were produced and likewise optically characterized. Since the different building blocks show diverse optical response, this technique presents a straightforward way to color-tune the resulting networks simply by choosing the building block ratio in connection with their quantum yield.     

Synthesis,crystal structure,and electronic structure of Li2PbSiS4: a quaternary thiosilicate with a compressed chalcopyrite‐like structure

The new quaternary thiosilicate, Li₂PbSiS₄ (dilithium lead silicon tetrasulfide), was prepared in an evacuated fused‐silica tube via high‐temperature, solid‐state synthesis at 800 °C, followed by slow cooling. The crystal structure was solved and refined using single‐crystal X‐ray diffraction data. By strict definition, the title compound crystallizes in the stannite structure type; however, this type of structure can also be described as a compressed chalcopyrite‐like structure. The Li⁺ cation lies on a crystallographic fourfold rotoinversion axis, while the Pb²⁺ and Si⁴⁺ cations reside at the intersection of the fourfold rotoinversion axis with a twofold axis and a mirror plane. The Li⁺ and Si⁴⁺ cations in this structure are tetrahedrally coordinated, while the larger Pb²⁺ cation adopts a distorted eight‐coordinate dodecahedral coordination. These units join together via corner‐ and edge‐sharing to create a dense, three‐dimensional structure. Powder X‐ray diffraction indicates that the title compound is the major phase of the reaction product. Electronic structure calculations, performed using the full potential linearized augmented plane wave method within density functional theory (DFT), indicate that Li₂PbSiS₄ is a semiconductor with an indirect bandgap of 2.22 eV, which compares well with the measured optical bandgap of 2.51 eV. The noncentrosymmetric crystal structure and relatively wide bandgap designate this compound to be of interest for IR nonlinear optics.     

The first representative of a new class of charge transfer complexes in o-quinone series for organic semiconductors

The first representative of a new class of charge transfer complexes for organic semiconductors was synthesized. The reaction of p-nitroaniline (PNA) with [1,10]-phenanthroline-5,6-dione (PD) results in the formation of a stable molecular charge transfer (CT) complex PNA₃-PD₂ in a ratio of 3:2. The structure of the molecular CT complex PNA₃-PD₂ was established by X-ray diffraction studies. Using the density functional theory method, it is shown that several types of intermolecular interactions are realized in the complex: between the PNA amino group and the nitro group of another PNA molecule, carbonyl groups, and PD nitrogen atoms. Complex PNA₃-PD₂ is stable only in solid form. The diffuse reflectance UV–vis spectrum of PNA₃-PD₂ crystal powder is characterized by the intense weakly structured long-wavelength absorption band up to 650 nm. Quantum chemical calculations of the electronic structure have shown that the complex PNA₃-PD₂ is a straight-band semiconductor with a band gap of 2.11 eV.     

Large Nonlinear Optical Activity of a Near-infrared-absorbing Bithiophene-based Polymer with a Head-to-head Linkage

Although the production of near-infrared (NIR)-absorbing organic polymers with an excellent nonlinear optical (NLO) response is vital for various optoelectronic devices and photodynamic therapy, the molecular design and relevant photophysical investigation still remain challenging. In this work, large NLO activity is observed for an NIR-absorbing bithiophene-based polymer with a unique head-to-head linkage in the NIR region. The saturable absorption coefficient and modulation depth of the polymer are determined as ∼−3.5×10⁵ cm GW⁻¹ and ∼32.43%, respectively. Notably, the polymer exhibits an intrinsic nonlinear refraction index up to ∼−9.36 cm² GW⁻¹, which is six orders of magnitude larger than that of CS₂. The maximum molar-mass normalized two-photon absorption cross-section (σ₂/M) of this polymer can be up to ∼14 GM at 1200 nm. Femtosecond transient absorption measurements reveal significant spectral overlap between the 2PA and excited state absorption in the 1000–1400 nm wavelength range and an efficient triplet quantum yield of ∼36.7%. The results of this study imply that this NIR-absorbing polymer is promising for relevant applications.     

Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor

In this study, GaAs metal–oxide–semiconductor (MOS) capacitors using Y‐incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 × 10¹¹ cm^–2 eV^–1), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 × 10^–5A/cm² at V_fb + 1 V). These merits should be attributed to the complementary properties of Y₂O₃ and Ta₂O₅:Y can effectively passivate the large amount of oxygen vacancies in Ta₂O₅, while the positively‐charged oxygen vacancies in Ta₂O₅ are capable of neutralizing the effects of the negative oxide charges in Y₂O₃. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices.

Capacitance–voltage characteristic of the GaAs MOS capacitor with TaYON gate dielectric (Y content = 27.6%) proposed in this work with the cross sectional structure and dielectric surface morphology as insets.     

大口径离轴凸非球面系统拼接检验技术

针对大口径离轴凸非球面面形检测的困难,本文将光学系统波像差检验技术与子孔径拼接干涉技术相结合,提出了凸非球面系统拼接检测方法。对该方法的基本原理和具体实现过程进行了分析和研究,并建立了合理的子孔径拼接数学模型。当离轴三反光学系统的主镜和三镜加工完成以后,对整个系统进行装调和测试,并依次测定光学系统各视场的波像差分布,通过综合优化子孔径拼接算法和全口径面形数据插值可以求解得到大口径非球面全口径的面形信息,从而为非球面后续加工和系统的装调提供了依据和保障。结合工程实例,对一口径为287 mm×115 mm的离轴非球面次镜进行了系统拼接测试和加工,经过两个周期的加工和测试,其面形分布的RMS值接近1/30λ(λ=632.8 nm)。