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131.
超宽禁带半导体材料金刚石在热导率、载流子迁移率和击穿场强等方面表现出优异的性质,在功率电子学领域具有广阔的应用前景。实现p型和n型导电是制备金刚石半导体器件的基础要求,其中p型金刚石的发展较为成熟,主流的掺杂元素是硼,但在高掺杂时存在空穴迁移率迅速下降的问题;n型金刚石目前主流的掺杂元素是磷,还存在杂质能级深、电离能较大的问题,以及掺杂之后金刚石晶体中的缺陷造成载流子浓度和迁移率都比较低,电阻率难以达到器件的要求。因此制备高质量的p型和n型金刚石成为研究者关注的焦点。本文主要介绍金刚石独特的物理性质,概述化学气相沉积法和离子注入法实现金刚石掺杂的基本原理和参数指标,进而回顾两种方法进行单晶金刚石薄膜p型和n型掺杂的研究进展,系统总结了其面临的问题并对未来方向进行了展望。 相似文献
132.
Jong-Han Lee Sangwon ShinKeun Hwa Chae Donghwan KimJonghan Song 《Current Applied Physics》2012,12(3):924-927
1 MeV Cu2+ ions have been implanted into un-doped ZnO and Ga-doped ZnO films with a dose of 1 × 1017 ions/cm2 at room-temperature. Cu ion-implanted Ga-doped ZnO had ferromagnetism at room-temperature and the saturation magnetization of this sample was estimated to be 0.12 μB per Cu, while the Cu ion-implanted un-doped ZnO did not show ferromagnetic behavior. Near-edge X-ray fine structure (NEXAFS) spectroscopy revealed that a partial amount of implanted Cu ions existed as Cu2+ (d9) state in Ga-doped ZnO film. On the other hand, almost Cu atoms existed as Cu1+ (d10) state in un-doped ZnO film. However, the subsequent annealing at temperature above 800 °C on this ferromagnetic sample induced the annihilation of ferromagnetism due to the formation of non-ferromagnetic Cu2O phase. 相似文献
133.
Based on the thermo-electro-elastic coupling theory, the mathematical model for a surface heated piezoelectric semiconductor (PS) plate is developed in the time domain. Applying the direct and inverse Laplace transformations to the established model, the mechanical and electrical responses are investigated. The comparison between the analytical solution and the finite element method (FEM) is conducted, which illustrates the validity of the derivation. The calculated results show that the maximum values of the mechanical and electrical fields appear at the heating surface. Importantly, the perturbation carriers tend to concentrate in the zone near the heating surface under the given boundary conditions. It can also be observed that the heating induced elastic wave leads to jumps for the electric potential and perturbation carrier density at the wavefront. When the thermal relaxation time is introduced, all the field quantities become smaller because of the thermal lagging effect. Meanwhile, it can be found that the thermal relaxation time can describe the smooth variation at the jump position. Besides, for a plate with P-N junction, the effect of the interface position on the electrical response is studied. The effects of the initial carrier density on the electrical properties are discussed in detail. The conclusions in this article can be the guidance for the design of PS devices serving in thermal environment. 相似文献
134.
Size-dependence of optical properties and energy relaxation in CdSe/ZnS quantum dots (QDs) were investigated by two-colour femtosecond (fs) pump-probe (400/800 nm) and picosecond time-resolved photoluminescence (ps TRPL) experiments. Pump-probe measurement results show that there are two components for the excited carriers relaxation, the fast one with a time constant of several ps arises from the Auger-type recombination, which shows almost particle sizeindependence. The slow relaxation component with a time constant of several decades of ns can be clearly determined with ps TRPL spectroscopy in which the slow relaxation process shows strong particle size-dependence. The decay time constants increase from 21 to 34 ns with the decrease of particle size from 3.2 to 2.1 nm. The room-temperature decay lifetime is due to the thermal mixing of bright and dark excitons, and the size-dependence of slow relaxation process can be explained very well in terms of simple three-level model. 相似文献
135.
Microscopic phonon theory of semiconductor nanocrystals (NCs) is reviewed in this paper. Phonon modes of Si and Ge NCs with
various sizes of up to 7 nm are investigated by valence force field theory. Phonon modes in spherical SiGe alloy NCs approximately
3.6 nm (containing 1147 atoms) in size have been investigated as a function of the Si concentration. Phonon density-of-states,
quantum confinement effects, as well as Raman intensities are discussed.
相似文献
136.
Noda Susumu Imada Masahiro Chutinan Alongkarn Yamamoto Noritsugu 《Optical and Quantum Electronics》2002,34(8):723-736
Three-dimensional (3D) and two-dimensional (2D) photonic crystals based on III–V semiconductors are described. On the 3D photonic crystals, the development of complete photonic crystals at optical wavelengths and their applications to ultrasmall optical integrated circuits including 3D sharp bend waveguide are described. On the 2D photonic crystals, two-unique device and/or phenomena are demonstrated. 相似文献
137.
Vicari L 《The European physical journal. E, Soft matter》2002,9(4):335-340
We present a new pump probe laser beams configuration for the nonlinear optical characterization of microemulsions. We detect
the variation of the on-axis optical intensity of the probe beam as generated by the concentration profile induced in an optically
thin film of microemulsion by the pump beam. A mathematical model has been introduced to describe the phenomenon. The technique
allows the determination of both Kerr-like optical nonlinearity and time constants and, therefore, it gives information both
on cluster dimension and their shape. We discuss its application to WAD (water/AOT/decane, where AOT denotes sodium-bis-di-ethyl-sulfosuccinate)
with the application of a strong electric field of optical source. Comparison between theoretical predictions and experimental
results confirms the presence of giant optical nonlinearity in the absence of turbidity divergence. Chainlike shape of clusters,
of the kind already reported with the application of strong electric field, could justify this result.
Received 26 October 2002
RID="a"
ID="a"e-mail: vicari@na.infn.it 相似文献
138.
V. A. Harutyunyan S. L. Harutyunyan G. H. Demirjan N. H. Gasparyan 《Journal of Contemporary Physics (Armenian Academy of Sciences)》2008,43(5):218-225
In the effective-mass approximation the single-electron states in a semiconductor cylindrical nanolayer in the regime of strong quantization are considered. The explicit form of the energy spectrum and envelope wave functions of single-electron states is obtained in the case of large and moderate radii of the system. The corresponding absorption bands of dipole and quadrupole optical transitions in the layer are calculated. 相似文献
139.
利用复合靶共溅射法制备了半磁性半导体 Pb1- x Cox Se 薄膜.研究了薄膜的成分结构以及电阻率温度特性和磁化率温度特性间的关系.结果表明:由于 Co 离子介入, Pb1- x Cox Se 发生了由金属特性向半导体特性的转变,在充分低的温度下,并伴有磁相转变.磁相转变温度与磁性离子浓度相关,磁化率的相对变化幅度与磁性离子浓度有关 相似文献
140.
通过半波整流二极管中的电流问题 总被引:1,自引:0,他引:1
考虑到半波整流电容滤波电路的特点,仔细地分析了这种电路整流滤波后的电流波形,并提出了这种电路瞬时电流最大值的计算公式。 相似文献